AOL1712 [FREESCALE]
N-Channel Enhancement Mode Field; N沟道增强型场
| 型号： | AOL1712 |
| 厂家： | 
Freescale |
| 描述： | N-Channel Enhancement Mode Field |
| 文件： | 总6页 (文件大小：566K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOL1712
N-Channel Enhancement Mode Field
Effect Transistor
General Description
SRFET TM AOL1712 uses advanced trench technology with a monolithically integrated Schottky
diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side
FET in SMPS, load switching and general purpose applications.
Features
VDS (V) = 30V
ID =65A
(VGS = 10V)
RDS(ON) < 4.2mΩ (VGS = 10V)
RDS(ON) < 5.5mΩ (VGS = 4.5V)
Ultra SO-8TM Top View
D
D
SRFET TM
Soft Recovery MOSFET:
Integrated Schottky Diode
Bottom tab
connected to
drain
G
S
S
G
Absolute Maximum Ratings TC=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±12
65
V
A
TC=25°C
Continuous Drain
Current B, H
Pulsed Drain Current C
TC=100°C
ID
65
80
IDM
TA=25°C
TA=70°C
16
Continuous Drain
Current A
Avalanche Current C
A
IDSM
IAR
12
38
A
Repetitive avalanche energy L=0.3mH C
EAR
217
100
50
mJ
TC=25°C
Power Dissipation B
TC=100°C
PD
W
TA=25°C
2.1
PDSM
W
Power Dissipation A
1.3
TA=70°C
Junction and Storage Temperature Range TJ, TSTG
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
19.6
50
Max
25
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Case D
60
Steady-State
RθJC
1
1.5
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AOL1712
N-Channel Enhancement Mode Field
Effect Transistor
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
V
DS=30V, VGS=0V
0.1
mA
20
IDSS
Zero Gate Voltage Drain Current
TJ=125°C
TJ=125°C
V
DS=0V, VGS= ±12V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
2.5
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
1.4
80
1.8
VGS=10V, VDS=5V
A
V
GS=10V, ID=20A
3.5
5.5
4.4
90
4.2
6.6
5.5
RDS(ON)
Static Drain-Source On-Resistance
mΩ
V
GS=4.5V, ID=20A
VDS=5V, ID=20A
IS=1A,VGS=0V
Maximum Body-Diode + Schottky Diode Continuous Current H
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
S
V
A
0.36
0.5
65
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
3940 5120
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
590
255
VGS=0V, VDS=0V, f=1MHz
0.72
1.1
95
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
73
35
nC
nC
nC
nC
ns
VGS=10V, VDS=15V, ID=20A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
10.4
12.4
9.8
8.4
45
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
ns
tD(off)
tf
ns
ns
10
trr
IF=20A, dI/dt=300A/µs
IF=20A, dI/dt=300A/µs
36
43
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
32
nC
A: The value of RθJA is measured with the device in a still air environment with T A=25°C. The power dissipation PDSM and current rating IDSM are
based on TJ(MAX)=150°C, using steady state junction-to-ambient thermal resistance.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
H. The maximum current rating is limited by bond-wires.
* This device is guaranteed green after date code 8P11 (June 1 ST 2008)
Rev3: July. 2008
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AOL1712
N-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
60
40
20
0
100
VDS=5V
10V
4.5V
3.5V
80
60
40
20
0
VGS=3.0V
125°C
25°C
0
0.5
1
1.5
2
2.5
3
1
1.5
2
2.5
VGS(Volts)
Figure 2: Transfer Characteristics
3
3.5
4
V
DS (Volts)
Figure 1: On-Region Characteristics
5
1.9
1.7
1.5
1.3
1.1
0.9
0.7
ID=20A
VGS=10V
VGS=4.5V
4.5
4
VGS=4.5V
VGS=10V
3.5
3
0
5
10
15
20
25
30
-40 -15 10 35
60 85 110 135 160 185
I
D (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
12
100
10
ID=20A
10
8
125°C
1
125°C
25°C
6
0.1
25°C
4
0.01
0.001
2
2
4
6
8
10
0.0
0.2
0.4
SD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
V
V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
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AOL1712
N-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
6000
VDS=15V
ID=20A
5000
Ciss
4000
3000
6
4
2000
Coss
2
Crss
1000
0
0
0
10
20
30
40
50
60
70
80
0
5
10
15
20
25
30
Qg (nC)
V
DS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
10000
1000
100
TJ(Max)=175°C
TC=25°C
100µs
1ms
RDS(ON)
10ms
limited
100ms
DC
TJ(Max)=175°C
TC=25°C
10
0.1
1
10
10
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJc.RθJc
RθJC=1.5°C/W
PD
0.1
Single Pulse
Ton
T
0.01
0.00001
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
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AOL1712
N-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
120
100
80
60
40
20
0
80
TC=25°C
60
40
20
0
25
50
75
100
125
150
175
1.0E-06
1.0E-05
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
1.0E-04
1.0E-03
TCASE (°C)
Figure 13: Power De-rating (Note B)
80
60
40
20
0
100
80
60
40
20
0
TJ(Max)=150°C
TA=25°C
0
25
50
75
TCASE (°C)
Figure 14: Current De-rating (Note B)
100
125
150
175
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure15: Single Pulse Power Rating Junction-to-
Ambient (Note G)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJc.RθJc
RθJA=60°C/W
0.1
0.01
PD
D=Ton/T
Single Pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
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AOL1712
N-Channel Enhancement Mode Field
Effect Transistor
Gate Charge Test Circuit &Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Vds
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
t d(on)
t
r
t d(off)
t
f
t on
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR=1/2LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTest Circuit &Waveforms
Qrr=- Idt
Vds +
Vds -
Ig
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
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