AON6454A [FREESCALE]
150V N-Channel MOSFET; 150V N沟道MOSFET
| 型号： | AON6454A |
| 厂家： | 
Freescale |
| 描述： | 150V N-Channel MOSFET |
| 文件： | 总6页 (文件大小：503K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON6454A
150V N-Channel MOSFET
General Description
The AON6454A combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON)
.This device is ideal for boost converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backligh
ting.
Features
VDS
150V
31A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 38mΩ
R
DS(ON) (at VGS=7V)
< 44mΩ
D
Top View
1
2
3
4
8
7
6
5
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
150
V
V
VGS
±20
TC=25°C
31
Continuous Drain
Current
Pulsed Drain Current C
ID
TC=100°C
A
20
IDM
65
TA=25°C
TA=70°C
5
Continuous Drain
Current
IDSM
A
4.0
Avalanche Current C
IAS, IAR
12
A
Avalanche energy L=0.1mH C
EAS, EAR
7
83
mJ
TC=25°C
Power Dissipation B
TC=100°C
PD
W
33
TA=25°C
2.3
PDSM
W
°C
Power Dissipation A
1.5
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
14
40
1
Max
17
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Steady-State
Steady-State
55
RθJC
1.5
1/6
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AON6454A
150V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
150
V
VDS=150V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
4.6
nA
V
VGS(th)
ID(ON)
3.4
65
4
A
31
59
38
72
44
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=7V, ID=20A
35
mΩ
S
VDS=5V, ID=20A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
35
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current G
0.69
1
V
85
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1365 1710 2055
pF
pF
pF
Ω
V
GS=0V, VDS=75V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
100
30
150
50
200
70
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=75V, ID=20A
VGS=10V, VDS=75V, RL=3.75Ω,
0.5
1.1
1.7
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
25
5
32.5
7.8
9.5
13.5
12
40
10
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
8
ns
R
GEN=3Ω
tD(off)
tf
20
ns
4.5
ns
trr
IF=10A, dI/dt=500A/µs
IF=10A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
33
ns
Qrr
nC
350
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
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AON6454A
150V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70
60
50
40
30
20
10
0
50
40
30
20
10
0
10V
VDS=5V
7V
8V
6.5V
125°C
6V
25°C
5.5V
VGS=5V
2
2
3
4
5
6
7
8
0
1
3
VDS (Volts)
4
5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
45
2.4
2.2
2
VGS=7V
40
35
30
25
20
VGS=10V
ID=20A
1.8
1.6
1.4
1.2
1
VGS=10V
VGS=7V
ID=20A
0.8
0
5
10
15
20
25
30
0
25
50
75
100
125
150
175
I
D (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
1.0E+02
1.0E+01
70
60
50
40
30
20
ID=20A
125°C
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
0.8
25°C
0.0
0.2
0.4
0.6
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
1.0
1.2
4
5
6
7
8
9
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
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AON6454A
150V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2800
10
VDS=75V
ID=20A
2400
2000
1600
1200
800
400
0
8
Ciss
6
4
Coss
2
Crss
0
0
25
50
75
DS (Volts)
100
125
150
0
5
10
15 20
Qg (nC)
25
30
35
V
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
400
350
300
250
200
150
100
50
1000.0
100.0
10.0
1.0
TJ(Max)=150°C
TC=25°C
10µs
RDS(ON)
limited
100µs
1ms
10ms
DC
TJ(Max)=150°C
TC=25°C
0.1
0.0
0
0.01
0.1
1
10
100
1000
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK=TC+PDM.ZθJC.RθJC
RθJC=1.5°C/W
1
0.1
PD
Ton
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
3/6
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AON6454A
150V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
TA=25°C
80
TA=100°C
60
10
TA=150°C
40
TA=125°C
20
1
0
1
10
100
1000
0
25
50
75
100
125
150
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
TCASE (°C)
Figure 13: Power De-rating (Note F)
40
30
20
10
0
10000
1000
100
10
TA=25°C
1
0.00001
0.001
0.1
10
1000
0
25
50
75
100
125
150
T
CASE (°C)
Pulse Width (s)
Figure 14: Current De-rating (Note F)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
θJA=55°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
0.1
PD
0.01
Single Pulse
0.1
Ton
T
0.001
0.0001
0.001
0.01
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
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AON6454A
150V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
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