AON7408 [FREESCALE]
30V N-Channel MOSFET; 30V N沟道MOSFET
| 型号： | AON7408 |
| 厂家： | 
Freescale |
| 描述： | 30V N-Channel MOSFET |
| 文件： | 总4页 (文件大小：290K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON7408
30V N-Channel MOSFET
General Description
design to provide excellent R
DS(ON) with low gate
The AON7408 uses advanced trench technology and
purpose applications.
charge. This device is suitable for use in general
Features
VDS (V) = 30V
ID = 23A
(VGS = 10V)
RDS(ON) < 20mΩ (VGS = 10V)
RDS(ON) < 32mΩ (VGS = 4.5V)
D
Top View
1
8
2
3
7
6
4
5
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
TC=25°C
23
Continuous Drain
Current B
ID
TC=100°C
15
Pulsed Drain Current C
IDM
64
A
TA=25°C
TA=70°C
TC=25°C
TC=100°C
TA=25°C
TA=70°C
10
Continuous Drain
Current A
IDSM
8
16.7
PD
Power Dissipation B
7
W
°C
3.1
2
PDSM
Power Dissipation A
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
25
Max
40
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Steady-State
Steady-State
62
75
Maximum Junction-to-Case B
RθJC
6.2
7.5
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AON7408
30V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
VDS=30V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
VDS=0V, VGS= ±20V
VDS=VGS , ID=250µA
VGS=10V, VDS=5V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
2.6
nA
V
VGS(th)
ID(ON)
1.5
64
2.1
A
V
GS=10V, ID=10A
15.3
23.3
22.7
17
20
30
32
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
mΩ
VGS=4.5V, ID=5A
VDS=5V, ID=10A
IS=1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
S
V
A
0.75
1
Maximum Body-Diode Continuous Current
3.8
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
373
67
448
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
41
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=15V, ID=10A
1.8
2.8
8.6
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
7.1
1.2
1.6
4.3
2.8
15.8
3
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=15V, RL=1.5Ω,
RGEN=3Ω
tD(off)
tf
trr
IF=10A, dI/dt=100A/µs
IF=10A, dI/dt=100A/µs
10.5
4.5
12.6
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of RθJA is measured with the device in a still air environment with TA =25°C. The power dissipation PDSM and current rating IDSM are
based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. The maximum current rating is limited by bond-wires.
Rev5: May-2012
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
2/4
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AON7408
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
0
15
12
9
VDS=5V
10V
6V
4.5V
6
125°C
VGS=3.5V
3
25°C
0
0
1
2
3
4
5
1.5
2
2.5
VGS(Volts)
Figure 2: Transfer Characteristics
3
3.5
4
4.5
VDS (Volts)
Fig 1: On-Region Characteristics
VGS=10V
40
35
30
25
20
15
10
1.8
1.6
1.4
1.2
1
VGS=4.5V
VGS=4.5V
VGS=10V
0.8
0.6
0
5
10
15
20
0
25
50
75
100
125
150
175
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
1.0E+00
1.0E-01
1.0E-02
60
ID=10A
50
40
30
125°C
125°C
25°C
1.0E-03
20
1.0E-04
25°C
10
1.0E-05
2
4
6
8
10
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
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AON7408
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
600
500
10
VDS=15V
ID=10A
8
Ciss
400
6
4
2
0
300
Coss
200
100
0
Crss
0
2
4
6
8
0
5
10
VDS (Volts)
Figure 8: Capacitance Characteristics
15
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
100
10
1000
10µs
TJ(Max)=150°C
TA=25°C
100
10
1
100µs
DC
1ms
10ms
RDS(ON)
limited
1
0.1
0.01
TJ(Max)=150°C
TA=25°C
0.1
1
10
100
0.0001
0.01
1
100
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note H)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
1
0.1
P
NG
D
Ton
T
Single Pulse
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note H)
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