AON7702B [FREESCALE]
30V N-Channel MOSFET; 30V N沟道MOSFET
| 型号： | AON7702B |
| 厂家： | 
Freescale |
| 描述： | 30V N-Channel MOSFET |
| 文件： | 总7页 (文件大小：351K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON7702B
30V N-Channel MOSFET
General Description
SRFETTMAON7702B uses advanced trench technology
excellent RDS(ON) ,and low gate charge. This device is
switching and general purpose applications.
with a monolithically integrated Schottky diode to provide
suitable for use as a low side FET in SMPS, load
Features
VDS
30V
ID (at VGS=10V)
20A
R
DS(ON) (at VGS=10V)
< 9.5mΩ
< 14.5mΩ
RDS(ON) (at VGS=4.5V)
D
Top View
SRFETTM
1
8
Soft Recovery MOSFET:
Integrated Schottky Diode
2
3
7
6
4
5
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
A
TC=25°C
20
Continuous Drain
Current G
ID
TC=100°C
15.5
Pulsed Drain Current C
IDM
80
TA=25°C
TA=70°C
13.5
Continuous Drain
Current
IDSM
A
11
Avalanche Current C
IAS
19
A
Avalanche energy L=0.1mH C
EAS
18
mJ
TC=25°C
Power Dissipation B
TC=100°C
23
PD
W
9
TA=25°C
3.1
2
PDSM
W
°C
Power Dissipation A
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
30
Max
40
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t
≤ 10s
RθJA
Steady-State
Steady-State
60
75
RθJC
4.5
5.4
1/7
www.freescale.net.cn
AON7702B
30V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=10mA, VGS=0V
VDS=30V, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
0.5
mA
100
IDSS
Zero Gate Voltage Drain Current
TJ=125°C
TJ=125°C
VDS=0V, VGS=±20V
VDS=VGS，ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=13.5A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
2.5
nA
V
VGS(th)
ID(ON)
1.5
80
2
A
7.6
12.6
11.6
25
9.5
15.5
14.5
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=11A
mΩ
S
VDS=5V, ID=13.5A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current G
0.4
0.7
20
V
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
810
135
100
2.5
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=13.5A
VGS=10V, VDS=15V, RL=1.2Ω,
1.3
3.7
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
17
8.5
2.3
4.5
4
24
12
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
3
ns
RGEN=3Ω
tD(off)
tf
23
5
ns
ns
trr
IF=13.5A, dI/dt=500A/µs
IF=13.5A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
5
ns
Qrr
nC
4.3
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
2/7
www.freescale.net.cn
AON7702B
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
40
30
20
10
0
50
10V
VDS=5V
4.5V
4V
40
30
20
10
0
3.5V
125°C
25°C
VGS=3.0V
1
2
3
4
5
0
1
2
3
4
5
VGS(Volts)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
16
14
12
10
8
2
1.8
VGS=10V
ID=13.5A
VGS=4.5V
1.6
1.4
1.2
1
=4.5V
VGS
ID=11A
6
VGS=10V
0.8
4
0
25
50
75
100
125
150
175
0
5
10
ID (A)
15
20
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
30
25
20
15
10
5
1.0E+02
ID=13.5A
1.0E+01
125°C
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
125°C
25°C
25°C
0
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
www.freescale.net.cn
3/7
AON7702B
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1000
VDS=15V
ID=13.5A
Ciss
8
800
6
600
4
400
Coss
2
200
Crss
0
0
0
5
10
Qg (nC)
15
20
0
5
10
VDS (Volts)
Figure 8: Capacitance Characteristics
15
20
25
30
Figure 7: Gate-Charge Characteristics
200
160
120
80
1000.0
100.0
10.0
1.0
TJ(Max)=150°C
TC=25°C
10µs
RDS(ON)
limited
100µs
1ms
10ms
DC
TJ(Max)=150°C
TC=25°C
0.1
40
0.0
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
(Note F)
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=5.4°C/W
0.1
0.01
PD
Single Pulse
Ton
T
1E-05
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
4/7
www.freescale.net.cn
AON7702B
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
30
25
20
15
10
5
TA=25°C
TA=100°C
100
TA=150°C
10
1
TA=125°C
0
1
10
100
1000
0
25
50
75
100
125
150
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
TCASE (°C)
Figure 13: Power De-rating (Note F)
10000
25
TA=25°C
20
15
10
5
1000
100
10
1
0
1E-05
0.001
0.1
10
1000
0
25
50
75
TCASE (°C)
100
125
150
Pulse Width (s)
Figure 14: Current De-rating (Note F)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
0.1
0.01
PD
Single Pulse
0.01
Ton
10
T
0.001
1E-05
0.0001
0.001
0.1
1
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
5/7
www.freescale.net.cn
AON7702B
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
20A
10A
VDS=30V
5A
VDS=15V
IS=1A
0
50
100
150
200
0
50
100
Temperature (°C)
150
200
Temperature (°C)
Figure 18: Diode Forward voltage vs. Junction
Temperature
Figure 17: Diode Reverse Leakage Current vs.
Junction Temperature
20
15
10
5
12
10
8
14
12
10
8
5
di/dt=800A/µs
di/dt=800A/µs
4
3
2
1
0
125ºC
125ºC
25ºC
6
trr
6
25ºC
Qrr
4
125ºC
125ºC
4
S
Irm
2
2
25ºC
25ºC
10
0
0
0
0
5
10
15
IS (A)
20
25
30
0
5
15
20
25
30
IS (A)
Figure 18: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
Figure 19: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
10
8
10
10
8
5
Is=13.5A
Is=13.5A
8
4
3
2
1
0
125ºC
125ºC
trr
6
6
6
25ºC
25ºC
125ºC
Qrr
4
4
2
0
4
125ºC
25ºC
S
2
2
Irm
25ºC
0
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di/dt (A/µs)
di/dt (A/µs)
Figure 20: Diode Reverse Recovery Charge and Peak
Current vs. di/dt
Figure 21: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
6/7
www.freescale.net.cn
AON7702B
30V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
www.freescale.net.cn
7/7
相关型号：
©2020 ICPDF网 联系我们和版权申明