AON7804 [FREESCALE]
30V Dual N-Channel MOSFET; 30V双N沟道MOSFET
| 型号： | AON7804 |
| 厂家： | 
Freescale |
| 描述： | 30V Dual N-Channel MOSFET |
| 文件： | 总6页 (文件大小：452K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON7804
30V Dual N-Channel MOSFET
General Description
The AON7804 is designed to provide a high efficiency
synchronous buck power stage with optimal layout and
MOSFETs in a dual DFN3x3 package. The AON7804 is
applications.
board space utilization. It includes two low RDS (ON)
well suited for use in compact DC/DC converter
Features
VDS
30V
22A
ID (at VGS=10V)
< 21mΩ
< 26mΩ
R
DS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
D
D
Top View
G1
S1
D2
D2
D1
D1
S2
G2
G
G
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
30
V
VGS
ID
IDM
IDSM
Gate-Source Voltage
±20
V
A
TC=25°C
22
Continuous Drain
Current
Pulsed Drain Current C
TC=100°C
14
48
TA=25°C
TA=70°C
9
Continuous Drain
Current
Avalanche Current C
Avalanche energy L=0.1mH C
A
7
IAS, IAR
19
A
EAS, EAR
18
mJ
TC=25°C
17
PD
W
Power Dissipation B
Power Dissipation A
TC=100°C
TA=25°C
TA=70°C
7
3.1
2
PDSM
W
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Symbol
Typ
30
Max
40
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
60
75
Steady-State
Steady-State
RθJC
6.2
7.5
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AON7804
30V Dual N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
V
DS=30V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±20V
10
2.4
VGS(th)
ID(ON)
VDS=VGS ID=250µA
1.2
48
1.8
V
A
V
GS=10V, VDS=5V
VGS=10V, ID=8A
17
23
21
26
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=4.5V, ID=7A
VDS=5V, ID=9A
IS=1A,VGS=0V
21
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
30
S
V
A
0.75
1
Maximum Body-Diode Continuous Current
15
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
600
77
740
110
82
888
145
115
1.7
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
50
VGS=0V, VDS=0V, f=1MHz
0.5
1.1
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
12
6
15
7.5
2.5
3
18
9
nC
nC
nC
nC
ns
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
VGS=10V, VDS=15V, ID=8A
5
VGS=10V, VDS=15V, RL=1.7Ω,
RGEN=3Ω
3.5
19
3.5
ns
tD(off)
tf
ns
ns
trr
IF=8A, dI/dt=500A/µs
IF=8A, dI/dt=500A/µs
6
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
8
10
22
ns
Qrr
14
nC
18
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
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AON7804
30V Dual N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
30
25
20
15
10
5
10V
VDS=5V
4V
5V
3V
125°C
VGS=2.5V
25°C
3
0
0
1
1.5
2
2.5
3.5
4
0
1
2
3
4
5
V
GS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
30
1.8
1.6
1.4
1.2
1
25
20
15
10
5
VGS=10V
ID=8A
VGS=4.5V
VGS=10V
VGS=4.5V
ID=7A
0.8
0
0
25
50
75
100 125 150 175 200
0
5
10
15
20
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
40
35
30
25
20
15
10
1.0E+02
1.0E+01
ID=8A
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
25°C
0.0
0.2
0.4
0.6
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.8
1.0
1.2
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
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AON7804
30V Dual N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1200
1000
800
600
400
200
0
VDS=15V
ID=8A
8
Ciss
6
4
Coss
2
Crss
0
0
3
6
9
12
15
0
5
10
15
VDS (Volts)
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
200
160
120
80
1000.0
100.0
10.0
1.0
TJ(Max)=150°C
TC=25°C
10µs
RDS(ON)
100µs
1ms
10ms
DC
TJ(Max)=150°C
TC=25°C
0.1
40
0.0
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=7.5°C/W
PD
0.1
Ton
T
Single Pulse
0.0001
0.01
0.00001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
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AON7804
30V Dual N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
10
1
20
16
12
8
TA=25°C
TA=100°C
TA=125°C
TA=150°C
4
0
1
10
100
1000
0
25
50
75
100
125
150
Time in avalanche, tA (µs)
TCASE (°C)
Figure 12: Single Pulse Avalanche capability (Note
C)
Figure 13: Power De-rating (Note F)
10000
1000
100
10
25
20
15
10
5
TA=25°C
1
0
0.00001
0.001
0.1
10
1000
0
25
50
75
100
125
150
T
CASE (°C)
Pulse Width (s)
Figure 14: Current De-rating (Note F)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
0.1
PD
0.01
0.001
Single Pulse
Ton
T
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
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AON7804
30V Dual N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
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