MC4612 [FREESCALE]
N & P-Channel 60-V (D-S) MOSFET White LED boost converters; 氮磷通道60 -V （ DS ） MOSFET白光LED升压转换器
| 型号： | MC4612 |
| 厂家： | 
Freescale |
| 描述： | N & P-Channel 60-V (D-S) MOSFET White LED boost converters |
| 文件： | 总7页 (文件大小：832K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Freescale
AO4612/MC4612
PRODUCT SUMMARY
N & P-Channel 60-V (D-S) MOSFET
rDS(on) (mΩ)
VDS (V)
60
ID(A)
7.7
35 @ VGS = 10V
50 @ VGS = 4.5V
57 @ VGS = -10V
77 @ VGS = -4.5V
6.5
Key Features:
-5.0
-4.3
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
-60
Typical Applications:
• White LED boost converters
• Automotive Systems
• Industrial DC/DC Conversion Circuits
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Nch Limit Pch Limit
Units
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
60
±20
7.7
6.5
60
-60
±20
-4.3
-3.9
-60
-2.9
2.1
V
TA=25°C
TA=70°C
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
ID
A
IDM
IS
3
A
TA=25°C
TA=70°C
2.1
1.3
Power Dissipation a
PD
W
°C
1.3
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol Maximum
Units
t <= 10 sec
62.5
RθJA
Maximum Junction-to-Ambient a
°C/W
Steady State
110
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
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Freescale
AO4612/MC4612
Electrical Characteristics
Parameter
Symbol
Test Conditions
Static
Min
Typ
Max
Unit
VDS = VGS, ID = 250 uA (N-ch)
VDS = VGS, ID = -250 uA (P-ch)
VDS = 0 V, VGS = ±20 V
1
V
V
VGS(th)
IGSS
Gate-Source Threshold Voltage
Gate-Body Leakage
-1
±100
1
nA
VDS = 20 V, VGS = 0 V
VDS = -20 V, VGS = 0 V (P-ch)
VDS = 5 V, VGS = 10 V (N-ch)
VDS = -5 V, VGS = -10 V (P-ch)
VGS = 10 V, ID = 5.4 A (N-ch)
(N-ch)
IDSS
Zero Gate Voltage Drain Current
uA
-1
10
A
A
On-State Drain Current a
ID(on)
-10
33
50
57
77
mΩ
mΩ
VGS = 4.5 V, ID = 4.4 A (N-ch)
VGS = -10 V, ID = -5.2 A (P-ch)
VGS = -4.5 V, ID = -4.2 A (P-ch)
Drain-Source On-Resistance a
rDS(on)
VDS = 15 V, ID = 5.4 A
(N-ch)
22
25
S
S
V
V
Forward Transconductance a
Diode Forward Voltage a
gfs
VDS = -15 V, ID = -5.2 A (P-ch)
IS = 1.5 A, VGS = 0 V
IS = -1 A, VGS = 0 V
Dynamic b
(N-ch)
(P-ch)
0.72
-0.77
VSD
Qg
Qgs
Qgd
td(on)
tr
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
N - Channel
VDS = 30 V, VGS = 4.5 V,
ID = 5.4 A
5
3.9
8.2
8
nC
ns
N - Channel
VDD = 30 V, RL = 5.6 Ω, ID = 5.4 A,
VGEN = 10 V, RGEN = 6 Ω
9
td(off)
tf
Turn-Off Delay Time
Fall Time
49
14
Ciss
Coss
Crss
Qg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
1465
126
114
20
N - Channel
VDS = 15 V, VGS = 0 V, f = 1 MHz
pF
nC
P - Channel
VDS = -30 V, VGS = -4.5 V,
ID = -5.2 A
Qgs
Qgd
td(on)
tr
5.6
7.9
6
P - Channel
VDD = -30 V, RL = 5.8 Ω,
ID = -5.2 A,
13
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
71
VGEN = -10 V, RGEN = 6 Ω
27
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1817
129
111
P - Channel
VDS = -15 V, VGS = 0 V, f = 1 MHz
pF
Notes
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
2
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Freescale
AO4612/MC4612
Typical Electrical Characteristics - N-channel
5
0.08
0.06
0.04
0.02
TJ = 25°C
4
3
3V
3.5V
2
1
0
4V,4.5V,6V,8V,10V
0
0
2
4
6
0
1
2
3
4
VGS - Gate-to-Source Voltage (V)
ID-Drain Current (A)
1. On-Resistance vs. Drain Current
2. Transfer Characteristics
0.1
0.08
0.06
0.04
0.02
100
10
TJ = 25°C
ID = 5.4A
TJ = 25°C
1
0.1
0.01
0
0
2
4
6
8
10
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
VGS - Gate-to-Source Voltage (V)
3. On-Resistance vs. Gate-to-Source Voltage
VSD - Source-to-Drain Voltage (V)
4. Drain-to-Source Forward Voltage
6
3000
2500
2000
1500
1000
500
F = 1MHz
10V,8V,6V,4.5V,4V
4
2
0
3.5V
Ciss
3V
Coss
Crss
0
0
0.05
0.1
0.15
0.2
0.25
0.3
0
5
10
15
20
VDS - Drain-to-Source Voltage (V)
VDS-Drain-to-Source Voltage (V)
5. Output Characteristics
6. Capacitance
3
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Analog Power
AO4612/MC4612
Typical Electrical Characteristics - N-channel
2.5
10
VDS = 30V
9
ID = 5.4A
8
7
6
5
4
3
2
1
2
1.5
1
0.5
0
0
-50 -25
0
25
50
75 100 125 150
10
20
30
40
TJ -JunctionTemperature(°C)
Qg - Total Gate Charge (nC)
7. Gate Charge
8. Normalized On-Resistance Vs
Junction Temperature
100
80
60
40
20
0
1000
100
10
10 uS
100 uS
1 mS
10 mS
100 mS
1 SEC
10 SEC
100 SEC
DC
1
0.1
Idm limit
Limited by
RDS
0.01
0.1
0.001 0.01
0.1
1
10
100
1000
1
10
100
1000
t1 TIME (SEC)
VDS Drain to Source Voltage (V)
9. Safe Operating Area
10. Single Pulse Maximum Power Dissipation
1
0.1
D = 0.5
0.2
0.1
RθJA(t) = r(t) + RθJA
RθJA = 110°C /W
0.05
0.02
P(pk)
0.01
t1
t2
Single Pulse
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 TIME (sec)
11. Normalized Thermal Transient Junction to Ambient
© Preliminary
4
Publication Order Number:
DS_AM4599C_1A
Analog Power
AO4612/MC4612
Typical Electrical Characteristics - P-channel
5
0.15
0.1
TJ = 25°C
4
3
3V
3.5V
2
0.05
1
0
4V,4.5V,6V,8V,10V
0
0
0
1
2
3
4
2
4
6
ID-Drain Current (A)
1. On-Resistance vs. Drain Current
VGS - Gate-to-Source Voltage (V)
2. Transfer Characteristics
100
10
0.2
0.18
0.16
0.14
0.12
0.1
TJ = 25°C
ID = -5.2A
TJ = 25°C
1
0.08
0.06
0.04
0.02
0
0.1
0.01
0
2
4
6
8
10
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
3. On-Resistance vs. Gate-to-Source Voltage
4. Drain-to-Source Forward Voltage
3000
2500
2000
1500
1000
500
6
4
2
0
F = 1MHz
10V,8V,6V,4.5V,4V
3.5V
3V
Ciss
Coss
Crss
0
0
0.1
0.2
0.3
0.4
0.5
0
5
10
15
20
VDS-Drain-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
5. Output Characteristics
6. Capacitance
© Preliminary
5
Publication Order Number:
DS_AM4599C_1A
Analog Power
AO4612/MC4612
Typical Electrical Characteristics - P-channel
10
2.5
VDS = -30V
9
ID = -5.2A
8
7
6
5
4
3
2
1
0
2
1.5
1
0.5
0
10
20
30
40
-50 -25
0
25
50
75 100 125 150
Qg - Total Gate Charge (nC)
TJ -JunctionTemperature(°C)
7. Gate Charge
8. Normalized On-Resistance Vs
Junction Temperature
1000
100
10
120
100
80
60
40
20
0
10 uS
100 uS
1 mS
10 mS
100 mS
1 SEC
10 SEC
100 SEC
DC
1
0.1
0.01
Idm limit
Limited by
RDS
0.001 0.01
0.1
1
10
100
1000
0.1
1
10
100
1000
t1 TIME (SEC)
VDS Drain to Source Voltage (V)
9. Safe Operating Area
10. Single Pulse Maximum Power Dissipation
1
0.1
D = 0.5
0.2
0.1
0.05
0.02
RθJA(t) = r(t) + RθJA
RθJA = 110°C /W
P(pk)
0.01
0.001
t1
t2
Single Pulse
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.0001
0.001
0.01
0.1
t1 TIME (sec)
1
10
100
1000
11. Normalized Thermal Transient Junction to Ambient
© Preliminary
6
Publication Order Number:
DS_AM4599C_1A
Freescale
AO4612/MC4612
Package Information
Note:
1. All Dimension Are In mm.
2. Package Body Sizes Exclude Mold Flash, Protrusion Or Gate Burrs. Mold Flash, Protrusion Or Gate Burrs Shall
Not Exceed 0.10 mm Per Side.
3. Package Body Sizes Determined At The Outermost Extremes Of The Plastic Body Exclusive Of Mold Flash, Tie
Bar Burrs, Gate Burrs And Interlead Flash, But Including Any Mismatch Between The Top And Bottom Of The
Plastic Body.
4. The Package Top May Be Smaller Than The Package Bottom.
5. Dimension "B" Does Not Include Dambar Protrusion. Allowable Dambar Protrusion Shall Be 0.08 mm Total In
Excess Of "B" Dimension At Maximum Material Condition. The Dambar Cannot Be Located On The Lower Radius
Of The Foot.
7
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