MC4840 [FREESCALE]
Dual N-Channel 40-V (D-S) MOSFET High performance trench technology; 双N通道40 -V （ DS ） MOSFET高性能沟道技术
| 型号： | MC4840 |
| 厂家： | 
Freescale |
| 描述： | Dual N-Channel 40-V (D-S) MOSFET High performance trench technology |
| 文件： | 总5页 (文件大小：341K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Freescale
AO4840/MC4840
Dual N-Channel 40-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
22 @ VGS = 10V
27 @ VGS = 4.5V
ID (A)
8.3
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
40
7.3
1
2
3
4
8
7
•
•
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SOIC-8 saves board space
6
5
•
•
Fast switching speed
High performance trench technology
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter
Symbol
VDS
Limit
40
Units
Drain-Source Voltage
Gate-Source Voltage
V
VGS
20
TA=25oC
TA=70oC
8.3
6.8
50
Continuous Drain Currenta
ID
A
Pulsed Drain Currentb
IDM
IS
Continuous Source Current (Diode Conduction)a
Power Dissipationa
2.3
2.1
1.3
A
TA=25oC
TA=70oC
PD
W
oC
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol Maximum Units
oC/W
t <= 10 sec
Steady-State
62.5
oC/W
110
Maximum Junction-to-Ambienta
RθJA
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature
www.freescale.net.cn
1
Freescale
AO4840/MC4840
SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)
Limits
Parameter
Symbol
Test Conditions
Unit
Min Typ Max
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V
(BR)DSS
GS(th)
GSS
V
GS = 0 V, ID = 250 uA
30
1
V
nA
uA
V
VDS = VGS, ID = 250 uA
VDS = 0 V, VGS = 20 V
DS = 32 V, VGS = 0 V
VDS = 32 V, VGS = 0 V, TJ = 55oC
100
1
I
V
Zero Gate Voltage Drain Current
On-State Drain CurrentA
IDSS
25
I
D(on)
V
DS = 5 V, VGS = 10 V
20
22
27
A
V
GS = 10 V, I
GS = 4.5 V, I
DS = 15 V, I
D
= 8.3 A
Drain-Source On-ResistanceA
Forward TranconductanceA
rDS(on)
mꢀ
V
D = 7.3 A
g
fs
V
D
= 8.3 A
40
0.7
5
S
V
A
Diode Forward Voltage
Pulsed Source Current (Body Diode)A
VSD
IS = 2.3 A, VGS = 0 V
ISM
Dynamicb
Total Gate Charge
Q
g
20
7
V
DS = 15 V, VGS = 5 V,
nC
pF
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Q
gs
gd
iss
oss
rss
d(on)
ID
= 8.3 A
Q
7
C
1317
272
169
20
9
N-Channel
C
VDS=20V, VGS=0V, f=1MHz
C
t
D
t
r
V
DD = 25 V, R
L
= 25 ꢀ , I = 1 A,
nS
GEN
V
= 10 V
Turn-Off Delay Time
Fall-Time
t
d(off)
70
20
t
f
Notes
a.
b.
Pulse test: PW <= 300us duty cycle <= 2%.
Guaranteed by design, not subject to production testing.
rther notice to any products herein. RF EESCALE makes no
FREESCALE reserves the right to make changes without fu
warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does freescale assumeany liability arising out of the application or
use of any product or circuit, and specificallydisclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in freescale data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the freescale product could create a situ ation where personal injury or death may occur.
Should Buyer purchase or use freescale products for any s uch unintended or unauthorized application, Buyer s hall indemnify and hold freescale and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
design or manufacture of the part. freescale is an Equal Opportunity/Affirmative Action Employer.
claim alleges that freescale was negligent regarding the
www.freescale.net.cn
2
Freescale
AO4840/MC4840
Typical Electrical Characteristics
40
120
100
80
60
40
20
0
V =5V
D
10V
6V
35
30
25
20
15
10
5
4.5V
0
0
0.5
1
1.5
DS
2
2.5
3
1
2
3
4
5
6
0
V (V)
VGS GatetoSourceVoltage(V)
Output Characteristics
Transfer Characteristics
2
0.06
0.05
0.04
0.03
0.02
0.01
0
1.8
1.6
1.4
1.2
1
Ciss
4.5V
6V
0.8
0.6
0.4
0.2
0
10V
Coss
Crss
0
10 20 30 40 50 60 70 80 90 10
0
0
5
10
15
20
IDDrainCurrent(A)
V (V)
DS
On-Resistance vs. Drain Current
Capacitance
10
8
VD= 15V
D
2
I
= 10A
ID =3.6A
1.8
V
GS =10V
1.6
1.4
6
1.2
1
4
2
0.8
0.6
0.4
0
0
2 4 6 8 10 12 14 16 18 20 22 24
QG, Total Gate Charge (nC)
-50
-25
0
25
50
75
100
125
150
o
- Juncti on T emper atur e ( C)
T
J
Gate Charge
On-Resistance vs. Junction Temperature
www.freescale.net.cn
3
Freescale
AO4840/MC4840
Typical Electrical Characteristics
0.03
Id=10A
100
10
0.025
0.02
TA=125oC
1
0.015
0.1
0.01
25o C
0.01
0.001
0.005
0
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
0
2
4
6
8
10
V
- Sour ce-t o- Dr ai n V OLT AGE ( V)
S D
V GatetoSourceVoltage(V)
GS
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
10
0
2.2
2
SINGLE PULSE
RqJA = 125oC/W
TA = 25oC
ID = -250mA
1.8
1.6
1.4
1.2
1
0.001
0.01
0.1
Time (sec)
1
10
100
-50
-25
0
25
50
75
100 125 150 175
TJ - Temperature (oC)
Threshold Voltage
Single Pulse Power
1
D = 0.5
0.2
0.1
RqJA(t) = r(t) + RqJA
RqJA = 125oC/W
0.1
0.0
P(pk
0.02
0.01
t1
t2
TJ - TA = P RqJA(t)
0.01
Duty Cycle, D = t1/
t2
SINGLE P ULSE
0.001
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (sec)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
www.freescale.net.cn
4
Freescale
AO4840/MC4840
Package Information
SO-8: 8LEAD
H x 45°
www.freescale.net.cn
5
相关型号：
©2020 ICPDF网 联系我们和版权申明