MC4854L [FREESCALE]
Dual N-Channel 30-V (D-S) MOSFET High power and current handling capability; 双N通道30 -V （ DS ） MOSFET的高功率和电流处理能力
| 型号： | MC4854L |
| 厂家： | 
Freescale |
| 描述： | Dual N-Channel 30-V (D-S) MOSFET High power and current handling capability |
| 文件： | 总6页 (文件大小：461K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Freescale
AO4854L /MC4854L
Dual N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low rDS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
34 @ VGS = 10V
41 @ VGS = 4.5V
ID (A)
6.9
30
6.0
1
2
3
4
8
7
•
•
Low rDS(on) Provides Higher Efficiency and
Extends Battery Life
Miniature SO-8 Surface Mount Package
Saves Board Space
6
5
•
•
High power and current handling capability
Low side high current DC-DC Converter
applications
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter
Symbol
VDS
Limit
30
Units
Drain-Source Voltage
Gate-Source Voltage
V
VGS
± 20
TA=25oC
TA=70oC
± 6.9
± 5.6
± 40
1.7
Continuous Drain Currenta
Pulsed Drain Currentb
ID
A
IDM
IS
Continuous Source Current (Diode Conduction)a
A
W
oC
TA=25oC
TA=70oC
2.1
Power Dissipationa
PD
1.3
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol Maximum Units
oC/W
t <= 10 sec
Steady-State
62.5
Maximum Junction-to-Ambienta
RθJA
oC/W
110
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature
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Freescale
AO4854L /MC4854L
SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)
Limits
Unit
Parameter
Symbol
Test Conditions
Min Typ Max
Static
Gate-Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
VDS = VGS, ID = 250 uA
VDS = 0 V, VGS = ± 20 V
1
±100 nA
VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 55oC
1
IDSS
Zero Gate Voltage Drain Current
uA
10
On-State Drain CurrentA
ID(on)
VDS = 5 V, VGS = 10 V
20
A
V
GS = 10 V, ID = 6.9 A
34
41
Drain-Source On-ResistanceA
rDS(on)
mΩ
VGS = 4.5 V, ID =6.0 A
Forward TranconductanceA
Diode Forward Voltage
gfs
VDS = 15 V, ID = 6.9 A
IS = 1.7 A, VGS = 0 V
25
S
VSD
0.77
V
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Qg
Qgs
Qgd
td(on)
tr
4.0
1.1
1.4
12
10
60
15
50
VDS = 15 V, VGS = 4.5 V,
ID = 6.9 A
nC
nS
VDD = 15 V, RL = 15 Ω , I
GEN = 10 V
D
= 1 A,
V
Turn-Off Delay Time
Fall-Time
td(off)
tf
Source-Ddrain Reverse Recovery Time
trr
IF = 1.7 A, Di/Dt = 100 A/uS
Notes
a.
b.
Pulse test: PW <= 300us duty cycle <= 2%.
Guaranteed by design, not subject to production testing.
rther notice to any products herein. RF EESCALE makes no
FREESCALE reserves the right to make changes without fu
warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does freescale assumeany liability arising out of the application or
use of any product or circuit, and specificallydisclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in freescale data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the freescale product could create a situ ation where personal injury or death may occur.
Should Buyer purchase or use freescale products for any s uch unintended or unauthorized application, Buyer s hall indemnify and hold freescale and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
design or manufacture of the part. freescale is an Equal Opportunity/Affirmative Action Employer.
claim alleges that freescale was negligent regarding the
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Freescale
AO4854L /MC4854L
Typical Electrical Characteristics (N-Channel)
50
40
30
20
10
0
2
1.7
1.4
1.1
0.8
0.5
VGS = 10V
6.0V
4.0V
4.5V
6.0V
3.0V
10V
0
0.5
1
1.5
2
0
10
20
30
40
50
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
Figure 2. On-Resistance with Drain Current
1.6
1.4
0.05
VGS = 10V
ID = 10A
ID = 10A
0.04
1.2
0.03
0.02
1.0
TA = 25oC
0.8
0.6
0.01
0
-50
-25
0
25
50
75
100 125 150
2
4
6
8
10
TJ Juncation Temperature (C)
VGS, Gate To Source Voltage (V)
Figure 3. On-Resistance Variation with Temperature
Figure 4. On-Resistance Variation with
Gate to Source Voltage
60
100
10
VD=5V
-55C
VGS = 0V
50
40
30
20
10
25C
TA = 125oC
1
12 5 C
0.1
25oC
0.01
0.001
0.0001
0
0
1
2
3
4
5
6
V
GS Gate to So urce Vo ltage (V)
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
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Freescale
AO4854L /MC4854L
Typical Electrical Characteristics (N-Channel)
10
8
1600
1200
800
400
0
f = 1MHz
GS = 0 V
ID=6.9a
V
Ciss
6
Coss
Crss
4
2
0
0
5
10
15
20
25
30
0
2
4
6
8
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, Charge (nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
50
2.4
2.2
2
SINGLE PULSE
RqJA = 125C/W
TA = 25C
VDS = VGS
ID = 250mA
40
30
20
10
0
1.8
1.6
1.4
1.2
1
-50 -25
0
25 50 75 100 125 150 175
TA, AMBIENT TEMPERATURE (oC)
0.001
0.01
0.1
1
10
100
t1, TIME (sec)
Figure 9. Threshold Vs Ambient Temperature
Figure 10. Single Pulse Maximum Power Dissipation
Normalized Thermal Transient Junction to Ambient
1
0.1
D = 0.5
RqJA(t) = r(t) * RqJA
RqJA = 125 C/W
0.2
0.1
0.05
P(pk)
0.02
0.01
t1
t2
0.01
0.001
TJ - TA = P * RqJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Square Wave Pulse Duration (S)
Figure 11. Transient Thermal Response Curve
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Freescale
AO4854L /MC4854L
Package Information
SO-8: 8LEAD
H x 45°
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Freescale
AO4854L /MC4854L
Ordering information
• AM4920N-T1-XX
– A: Analog Power
– M: MOSFET
– 4920: Part number
– N: N-Channel
– T1: Tape & reel
– XX: Blank:
PF:
Standard
Leadfree
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