MC6415 [FREESCALE]

P-Channel 20-V (D-S) MOSFET High performance trench technology; P通道20 -V ( DS ) MOSFET高性能沟道技术
MC6415
型号: MC6415
厂家: Freescale    Freescale
描述:

P-Channel 20-V (D-S) MOSFET High performance trench technology
P通道20 -V ( DS ) MOSFET高性能沟道技术

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Freescale  
AO6415/MC6415  
P-Channel 20-V (D-S) MOSFET  
These miniature surface mount MOSFETs utilize a  
high cell density trench process to provide low  
rDS(on) and to ensure minimal power loss and heat  
dissipation. Typical applications are DC-DC  
converters and power management in portable and  
battery-powered products such as computers,  
printers, PCMCIA cards, cellular and cordless  
telephones.  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) m()  
ID (A)  
-2.9  
90 @ VGS = -4.5V  
130 @ VGS = -2.5V  
150 @ VGS = -1.8V  
-20  
-2.5  
-2.3  
Low rDS(on) provides higher efficiency and  
extends battery life  
1
2
3
6
5
4
Low thermal impedance copper leadframe  
TSOP-6 saves board space  
Fast switching speed  
High performance trench technology  
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)  
Parameter Symbol Maximum Units  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
-20  
V
±12  
TA=25oC  
TA=70oC  
-2.9  
-2.4  
±16  
-1.0  
2.0  
Continuous Drain Currenta  
ID  
A
Pulsed Drain Currentb  
Continuous Source Current (Diode Conduction)a  
Power Dissipationa  
IDM  
IS  
A
TA=25oC  
TA=70oC  
PD  
W
1.3  
oC  
Operating Junction and Storage Temperature Range  
TJ, Tstg -55 to 150  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Units  
Maximum  
oC/W  
oC/W  
62.5  
Maximum Junction-to-Ambienta  
t <= 5 sec  
RθJA  
110  
Notes  
a.  
b.  
Surface Mounted on 1” x 1” FR4 Board.  
Pulse width limited by maximum junction temperature  
www.freescale.net.cn  
1
Freescale  
AO6415/MC6415  
SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)  
Limits  
Unit  
Parameter  
Symbol  
Test Conditions  
Min Typ Max  
Static  
Gate-Threshold Voltage  
Gate-Body Leakage  
VGS(th)  
IGSS  
VDS = VGS, ID = -250 uA  
VDS = 0 V, VGS = ±12 V  
-0.7  
±100 nA  
VDS = -16 V, VGS = 0 V  
-1  
IDSS  
ID(on)  
rDS(on)  
Zero Gate Voltage Drain Current  
On-State Drain CurrentA  
uA  
-5  
VDS = -16 V, VGS = 0 V, TJ = 55oC  
VDS = -4.5 V, VGS = -4.5 V  
VGS = -4.5 V, ID = -3.3 A  
VGS = -2.5 V, ID = -2.9 A  
-10  
A
90  
Drain-Source On-ResistanceA  
m  
130  
150  
VGS = -1.8 V, ID = -2.3 A  
Forward TranconductanceA  
Diode Forward Voltage  
gfs  
VDS = -10 V, ID = -4.9 A  
IS = 1.7 A, VGS = 0 V  
8.0  
S
VSD  
-0.8  
V
Dynamicb  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Turn-On Delay Time  
Rise Time  
Qg  
Qgs  
Qgd  
td(on)  
tr  
8
V
DS = -10 V, VGS = -4.5 V,  
nC  
nS  
1.8  
1.9  
22  
35  
45  
25  
ID = -4.9 A  
VDD = -10 V, RL = 6 , ID = -1 A,  
VGEN = -4.5 V  
Turn-Off Delay Time  
Fall-Time  
td(off)  
tf  
Notes  
a.  
b.  
Pulse test: PW <= 300us duty cycle <= 2%.  
Guaranteed by design, not subject to production testing.  
FREESCALE reserves the right to make changes without further notic e to any products herein. Freescale makes no warranty, representation  
or guarantee regarding the suitability of its products for any particular purpose, nor doesfreescale assume any liability arising ou t of the application or  
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental  
damages. “Typical” parameters which may be provided infreescale data sheet s and/or specifications can and do vary in different applications and  
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by  
under its patent rights nor the  
are not designed,  
customer’s technical experts. freescale does not convey any license  
rights of others. freescaleproducts  
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or  
of the freescale product could create  
sustain life, or for any other application in which the failure  
a situation where personal injury or death may occur.  
freescale and its  
nded or unauthorized application, Buyer shall indemnify and hold  
Should Buyer purchase or use freescale products for any such uninte  
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney  
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  
claim alleges that freescale was negligent regarding the design or m anufacture of the part. freescale is an Equal Opportunity/Affirmative  
Action Employer.  
www.freescale.net.cn  
2
Freescale  
AO6415/MC6415  
Typical Electrical Characteristics  
20  
15  
VGS = -4.5V  
-3.0V  
TA = -55oC  
-2.5V  
25oC  
15  
10  
5
10  
-2.0V  
125oC  
5
0
0
0
1
2
3
4
0.5  
1
1.5  
2
2.5  
-VDS, DRAIN TO SOURCE VOLTAGE (V)  
-VGS, GATE TO SOURCE VOLTAGE (V)  
Figure 1. Output Characteristics  
Figure 2. Transfer Characteristics  
1.6  
1500  
CISS  
1200  
900  
600  
300  
0
1.4  
1.2  
1
VGS = -2.5V  
COSS  
-4.5V  
CRSS  
0.8  
0
5
10  
15  
20  
0
5
10  
15  
20  
-VDS, DRAIN TO SOURCE VOLTAGE (V)  
-ID, DIRAIN CURRENT (A)  
Figure 3. On-Resistance vs. Drain Current  
Figure 4. Capacitance  
-10  
-8  
-6  
-4  
-2  
0
1.6  
1.4  
1.2  
1
VGS = -4.5V  
ID=-3.6A  
0.8  
0.6  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
4
8
12  
16  
20  
TJ, JUNCTION TEMPERATURE (oC)  
Qg, Charge (nC)  
Figure 5. Gate Charge  
Figure 6. On-Resistance vs. Junction Temperature  
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3
Freescale  
AO6415/MC6415  
Typical Electrical Characteristics  
100  
10  
0.15  
0.12  
0.09  
0.06  
0.03  
0
ID=-3.6A  
TA = 125oC  
1
0.1  
25oC  
0.01  
0.001  
0.0001  
1
2
3
4
5
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
-VGS, GATE TO SOURCE VOLTAGE (V)  
-VSD, BODY DIODE FORWARD VOLTAGE (V)  
Figure 7. Source-Drain Diode Forward Voltage  
Figure 8. On-Resistance with Gate to Source Voltage  
50  
SINGLE PULSE  
RqJA = 125oC/W  
TA = 25oC  
1.2  
1
40  
ID = -250  
A
µ
30  
20  
10  
0
0.8  
0.6  
0.4  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0.001  
0.01  
0.1  
1
10  
100  
TA, AMBIENT TEMPERATURE (oC)  
t1, TIME (SEC)  
Figure 9. Vth Gate to Source Voltage Vs Temperature  
Figure 10. Single Pulse Maximum Power Dissipation  
Normalized Thermal Transient Junction to Ambient  
1
0.1  
D = 0.5  
RqJA(t) = r(t) +RqJA  
RqJA = 125 °C/W  
0.2  
0.1  
0.0  
P (pk  
0.02  
0.01  
t1  
t2  
0.01  
0.001  
TJ - TA = P *RqJA(t)  
Duty Cycle, D = t1/ t2  
SINGLE P ULSE  
0.001  
0.0001  
0.01  
0.1  
1
10  
100  
1000  
t1, TIME (s ec)  
Figure 11. Transient Thermal Response Curve  
www.freescale.net.cn  
4
Freescale  
AO6415/MC6415  
Package Information  
TSOP-6: 6LEAD  
www.freescale.net.cn  
5

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