MMG3013NT1 [FREESCALE]
Heterojunction Bipolar Transistor Technology (InGaP HBT); 异质结双极晶体管技术（的InGaP HBT ）
| 型号： | MMG3013NT1 |
| 厂家： | 
Freescale |
| 描述： | Heterojunction Bipolar Transistor Technology (InGaP HBT) |
| 文件： | 总12页 (文件大小：217K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MMG3013NT1
Rev. 2, 8/2005
Freescale Semiconductor
Technical Data
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
Broadband High Linearity Amplifier
MMG3013NT1
The MMG3013NT1 is a General Purpose Amplifier that is internally
input matched and internally output matched. It is designed for a broad
range of Class A, small-signal, high linearity, general purpose applica-
tions. It is suitable for applications with frequencies from 0 to 6000 MHz
such as Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and
general small-signal RF.
0-6000 MHz, 20 dB
20.5 dBm
InGaP HBT
Features
• Frequency: 0-6000 MHz
• P1dB: 20.5 dBm @ 900 MHz
• Small-Signal Gain: 20 dB @ 900 MHz
• Third Order Output Intercept Point: 36 dBm @ 900 MHz
• Single 5 Volt Supply
1
2
• Internally Matched to 50 Ohms
3
• Low Cost SOT-89 Surface Mount Package
• Pb-Free and RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
CASE 1514-01, STYLE 1
SOT-89
PLASTIC
Table 1. Typical Performance (1)
Table 2. Maximum Ratings
Rating
Symbol
Value
Unit
V
Characteristic
Symbol 900 2140 3500 Unit
MHz MHz
MHz
(2)
Supply Voltage
V
7
300
CC
CC
Small-Signal Gain
(S21)
G
20
17
-19
-9
14.5
dB
dB
p
(2)
Supply Current
RF Input Power
I
mA
dBm
°C
P
in
12
Input Return Loss
(S11)
IRL
ORL
P1db
IP3
-17
-11
-15
-12
19
Storage Temperature Range
T
stg
-65 to +150
150
(3)
Junction Temperature
T
J
°C
Output Return Loss
(S22)
dB
2. Continuous voltage and current applied to device.
3. For reliable operation, the junction temperature should not
Power Output @1dB
Compression
20.5 20.5
dBm
dBm
exceed 150°C.
Third Order Output
Intercept Point
36
34
32
1. V = 5 Vdc, T = 25°C, 50 ohm system
CC
C
Table 3. Thermal Characteristics (V = 5 Vdc, I = 90 mA, T = 25°C)
CC
CC
C
(4)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
JC
42
°C/W
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Freescale Semiconductor, Inc., 2005. All rights reserved.
Table 4. Electrical Characteristics (V = 5 Vdc, 900 MHz, T = 25°C, 50 ohm system, in Freescale Application Circuit)
CC
C
Characteristic
Symbol
Min
Typ
Max
Unit
Small-Signal Gain (S21)
900 MHz
2140 MHz
G
19.3
16
20
17
—
—
dB
p
Input Return Loss (S11)
Output Return Loss (S22)
IRL
ORL
P1dB
IP3
—
—
—
—
—
80
—
-17
-11
20.5
36
4
—
—
dB
dB
Power Output @ 1dB Compression
Third Order Output Intercept Point
Noise Figure
—
dBm
dBm
dB
—
NF
—
(1)
Supply Current
I
90
5
110
—
mA
V
CC
(1)
Supply Voltage
V
CC
1. For reliable operation, the junction temperature should not exceed 150°C.
MMG3013NT1
RF Device Data
Freescale Semiconductor
2
Table 5. Functional Pin Description
2
Pin
Pin Function
Number
1
2
3
RF
in
Ground
RF /DC Supply
out
1
2
3
Figure 1. Functional Diagram
Table 6. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD 22-A114)
Machine Model (per EIA/JESD 22-A115)
Charge Device Model (per JESD 22-C101)
1A (Minimum)
A (Minimum)
IV (Minimum)
Table 7. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
1
260
°C
MMG3013NT1
RF Device Data
Freescale Semiconductor
3
50 OHM TYPICAL CHARACTERISTICS
0
25
20
15
10
T
= 85°C
C
S22
25°C
−10
−20
−30
-40°C
S11
V
I
= 5 Vdc
= 90 mA
CC
V
CC
= 5 Vdc
CC
−40
0
1
2
3
4
0
1
2
3
4
f, FREQUENCY (GHz)
f, FREQUENCY (GHz)
Figure 2. Small-Signal Gain (S21) versus
Frequency
Figure 3. Input/Output Return Loss versus
Frequency
23
21
23
22
21
20
19
18
17
16
900 MHz
19
17
15
2140 MHz
1960 MHz
2600 MHz
3500 MHz
13
V
= 5 Vdc
= 90 mA
CC
V
= 5 Vdc
= 90 mA
11
9
CC
I
CC
I
CC
0.5
1
1.5
2
2.5
3
3.5
10
12
14
16
18
20
P , OUTPUT POWER (dBm)
out
f, FREQUENCY (GHz)
Figure 4. Small-Signal Gain versus Output
Power
Figure 5. P1dB versus Frequency
39
180
160
140
120
100
80
36
33
30
27
24
60
V
= 5 Vdc
= 90 mA
CC
40
I
CC
20
0
1 MHz Tone Spacing
4
4.2
4.4
4.6
4.8
5
5.2
5.4
0
1
2
3
4
f, FREQUENCY (GHz)
V , COLLECTOR VOLTAGE (V)
CC
Figure 7. Third Order Output Intercept Point
versus Frequency
Figure 6. Collector Current versus Collector
Voltage
MMG3013NT1
RF Device Data
Freescale Semiconductor
4
50 OHM TYPICAL CHARACTERISTICS
39
36
33
38
37
36
35
34
33
30
27
24
V
= 5 Vdc
f = 900 MHz
CC
32
f = 900 MHz
1 MHz Tone Spacing
31
1 MHz Tone Spacing
−40
−20
0
20
40
60
80
100
4.9
4.95
5
5.05
5.1
T, TEMPERATURE (_C)
Figure 9. Third Order Output Intercept Point
versus Case Temperature
V
, COLLECTOR VOLTAGE (V)
CC
Figure 8. Third Order Output Intercept Point
versus Collector Voltage
5
10
−30
−40
−50
−60
−70
−80
4
10
V
= 5 Vdc
= 90 mA
CC
I
CC
f = 900 MHz
1 MHz Tone Spacing
3
10
120
125
130
135
140
145
150
14
5
8
11
17
20
T , JUNCTION TEMPERATURE (°C)
J
P , OUTPUT POWER (dBm)
out
NOTE: The MTTF is calculated with V = 5 Vdc, I = 90 mA
CC CC
Figure 10. Third Order Intermodulation versus
Output Power
Figure 11. MTTF versus Junction Temperature
−20
8
V
CC
= 5 Vdc, I = 90 mA, f = 2140 MHz
CC
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
−30
−40
6
4
−50
−60
−70
2
0
V
= 5 Vdc
= 90 mA
CC
I
CC
0
1
2
3
4
6
8
10
12
14
16
18
f, FREQUENCY (GHz)
P , OUTPUT POWER (dBm)
out
Figure 12. Noise Figure versus Frequency
Figure 13. Single-Carrier W-CDMA Adjacent
Channel Power Ratio versus Output Power
MMG3013NT1
RF Device Data
Freescale Semiconductor
5
50 OHM APPLICATION CIRCUIT: 40-800 MHz
V
SUPPLY
R1
C3
C4
Z5
L1
RF
OUTPUT
RF
INPUT
DUT
V
Z3
Z4
Z1
Z2
C1
C2
CC
Z1, Z5
Z2
Z3
0.347″ x 0.058″ Microstrip
0.575″ x 0.058″ Microstrip
0.172″ x 0.058″ Microstrip
Z4
PCB
0.403″ x 0.058″ Microstrip
Getek Grade ML200C, 0.031″, ε = 4.1
r
Figure 14. 50 Ohm Test Circuit Schematic
30
20
10
0
S21
R1
C4
C3
L1
−10
C2
C1
S22
−20
−30
−40
S11
V
= 5 Vdc
= 90 mA
CC
MMG30XX
Rev 2
I
CC
0
200
400
f, FREQUENCY (MHz)
600
800
Figure 15. S21, S11 and S22 versus Frequency
Figure 16. 50 Ohm Test Circuit Component Layout
Table 8. 50 Ohm Test Circuit Component Designations and Values
Part
Description
0.01 µF Chip Capacitors
Part Number
0603A103JAT2A
0603A102JAT2A
0603A105JAT2A
BK2125HM471
Manufacturer
AVX
C1, C2
C3
0.1 µF Chip Capacitor
1 µF Chip Capacitor
470 nH Chip Inductor
0 W Chip Resistor
AVX
C4
AVX
L1
Taiyo Yuden
Panasonic
R1
ERJ3GEY0R00V
MMG3013NT1
RF Device Data
Freescale Semiconductor
6
50 OHM APPLICATION CIRCUIT: 800-3600 MHz
V
SUPPLY
R1
C3
C4
Z5
L1
RF
OUTPUT
RF
INPUT
DUT
V
Z3
Z4
Z1
Z2
C1
C2
CC
Z1, Z5
Z2
Z3
0.347″ x 0.058″ Microstrip
0.575″ x 0.058″ Microstrip
0.172″ x 0.058″ Microstrip
Z4
PCB
0.403″ x 0.058″ Microstrip
Getek Grade ML200C, 0.031″, ε = 4.1
r
Figure 17. 50 Ohm Test Circuit Schematic
30
S21
20
10
R1
C4
C3
L1
0
C2
C1
S22
−10
−20
−30
V
= 5 Vdc
= 90 mA
S11
CC
MMG30XX
Rev 2
I
CC
800
1200
1600
2000
2400
2800
3200
3600
f, FREQUENCY (MHz)
Figure 18. S21, S11 and S22 versus Frequency
Figure 19. 50 Ohm Test Circuit Component Layout
Table 9. 50 Ohm Test Circuit Component Designations and Values
Part
Description
150 pF Chip Capacitors
Part Number
0603A151JAT2A
0603A102JAT2A
0603A105JAT2A
HK160856NJ-T
ERJ3GEY0R00V
Manufacturer
AVX
C1, C2
C3
0.1 µF Chip Capacitor
1 µF Chip Capacitor
56 nH Chip Inductor
0 W Chip Resistor
AVX
C4
AVX
L1
Taiyo Yuden
Panasonic
R1
MMG3013NT1
RF Device Data
Freescale Semiconductor
7
50 OHM TYPICAL CHARACTERISTICS
Table 10. Class A Common Emitter S-Parameters at VCC = 5 Vdc, ICC = 90 mA, TC = 255C
S
11
S
21
S
12
S
22
f
GHz
|S
11
|
∠ φ
|S
21
|
∠ φ
|S
12
|
∠ φ
|S |
22
∠ φ
0.1
0.15
0.2
0.162717
0.160561
0.160153
0.157910
0.155640
0.152870
0.150710
0.148730
0.145840
0.143950
0.141980
0.140120
0.138450
0.137510
0.136570
0.134433
0.132707
0.131087
0.129567
0.128275
0.127137
0.125513
0.124020
0.122379
0.121234
0.120081
0.118817
0.116609
0.115374
0.113850
0.113120
0.112080
0.111350
0.110660
0.110070
0.109570
0.108940
0.107610
0.106800
0.106240
0.104410
0.103200
0.102820
0.101220
0.100260
0.098910
171.108
167.971
163.027
159.994
156.091
152.178
148.189
144.135
140.465
136.404
132.557
128.67
124.924
121.228
117.62
11.479238
11.415032
11.337210
11.263950
11.200930
11.160790
11.096270
11.027770
10.957540
10.876040
10.785240
10.695820
10.604510
10.504830
10.400340
10.295550
10.186390
10.073620
9.965510
9.842290
9.725320
9.610100
9.485500
9.367530
9.251560
9.129800
9.011610
8.892430
8.772640
8.708890
8.598320
8.485180
8.379040
8.273700
8.167240
8.063390
7.958390
7.856150
7.751440
7.651320
7.553170
7.452840
7.354920
7.259510
7.163530
7.072340
174.775
171.459
168.606
165.874
163.101
160.282
157.597
154.845
152.097
149.449
146.811
144.176
141.59
0.069393
0.069131
0.068870
0.068640
0.068460
0.068400
0.068380
0.068210
0.068260
0.068090
0.068040
0.068000
0.067790
0.067690
0.067590
0.067520
0.067420
0.067380
0.067220
0.067050
0.066970
0.066930
0.066790
0.066840
0.066710
0.066685
0.066670
0.066687
0.066764
0.066970
0.067057
0.067090
0.067170
0.067200
0.067260
0.067320
0.067420
0.067460
0.067560
0.067600
0.067810
0.067960
0.067980
0.068230
0.068190
0.068480
-1.296
-1.887
-2.702
-3.308
-3.908
-4.523
-5.134
-5.794
-6.391
-6.918
-7.57
0.106264
0.112247
0.118610
0.127240
0.134977
0.144410
0.154090
0.164250
0.174550
0.185240
0.195510
0.206040
0.216910
0.227810
0.238140
0.248290
0.258400
0.268360
0.277810
0.287510
0.297010
0.306110
0.314950
0.323700
0.332570
0.339940
0.348650
0.356290
0.360061
0.364627
0.369410
0.374600
0.380650
0.386070
0.391590
0.396600
0.402290
0.407630
0.412720
0.418620
0.423200
0.428690
0.433410
0.438440
0.442830
0.447010
-133.221
-134.322
-135.449
-136.522
-137.648
-138.763
-139.895
-140.998
-142.085
-143.132
-144.211
-145.338
-146.461
-147.659
-148.902
-150.118
-151.55
0.25
0.3
0.35
0.4
0.45
0.5
0.55
0.6
0.65
0.7
-8.199
-8.743
-9.285
-9.831
-10.415
-10.866
-11.449
-11.901
-12.399
-12.949
-13.483
-13.882
-14.46
-14.928
-15.375
-15.818
-16.365
-16.815
-17.493
-17.963
-18.477
0.75
0.8
139.003
136.446
133.89
0.85
0.9
114.245
110.998
107.842
104.859
102.209
99.637
97.509
95.409
93.482
91.761
90.16
131.409
128.963
126.525
124.132
121.744
119.381
117.045
114.76
0.95
1
-153.097
-154.786
-156.435
-158.367
-160.411
-162.397
-164.386
-166.443
-168.554
-170.582
-172.695
-174.724
-177.374
-179.169
179.129
1.05
1.1
1.15
1.2
1.25
1.3
112.507
110.251
108.055
105.876
103.703
101.399
99.278
1.35
1.4
88.664
87.326
86.23
1.45
1.5
1.55
1.6
80.021
77.212
75.253
1.65
1.7
97.137
72.833
70.651
68.704
66.752
64.808
63.28
95.075
93.021
90.99
-18.984
-19.462
-19.938
-20.42
177.406
175.7
1.75
1.8
174.044
172.328
170.798
169.234
167.75
1.85
1.9
88.942
86.97
-20.891
-21.389
-21.917
-22.347
-22.888
-23.444
-23.91
1.95
2
84.972
83.012
81.047
79.114
77.223
75.325
73.436
71.577
69.734
61.916
60.415
59.082
57.787
56.94
2.05
2.1
166.176
164.723
163.19
2.15
2.2
161.75
2.25
2.3
55.6
-24.487
-24.984
-25.485
160.241
158.869
157.463
54.54
2.35
53.312
MMG3013NT1
RF Device Data
Freescale Semiconductor
8
Table 10. Class A Common Emitter S-Parameters at VCC = 5 Vdc, ICC = 90 mA, TC = 255C (continued)
S
11
S
21
S
12
S
22
f
GHz
|S
11
|
∠ φ
|S
21
|
∠ φ
|S
12
|
∠ φ
|S |
22
∠ φ
2.4
2.45
2.5
0.097870
0.096530
0.095360
0.094140
0.093150
0.092180
0.091130
0.090470
0.089850
0.088790
0.088180
0.087640
0.086490
0.087170
0.086660
0.086130
0.086330
0.086760
0.086510
0.086820
0.087230
0.087680
0.087990
0.088730
0.089200
52.576
6.980770
6.892310
6.802480
6.719330
6.634260
6.554070
6.471630
6.392370
6.314980
6.238550
6.166300
6.088480
6.020040
5.950380
5.881680
5.814190
5.749680
5.684930
5.619060
5.557890
5.498110
5.437290
5.376810
5.319060
5.259990
67.882
0.068550
0.068780
0.068940
0.069120
0.069290
0.069490
0.069610
0.069850
0.070210
0.070340
0.070550
0.070750
0.071030
0.071280
0.071610
0.071920
0.072150
0.072340
0.072640
0.072800
0.073130
0.073490
0.073710
0.073970
0.074200
-26.108
0.451420
0.457800
0.460110
0.464930
0.469350
0.473140
0.477010
0.481850
0.485260
0.489440
0.494180
0.497180
0.501590
0.505070
0.509400
0.514040
0.518490
0.523620
0.525880
0.530230
0.534740
0.538080
0.542580
0.546650
0.550400
155.974
51.814
50.69
66.059
64.259
62.461
60.65
-26.694
-27.154
-27.644
-28.295
-28.971
-29.561
-30.111
-30.649
-31.402
-32.044
-32.738
-33.388
-34.097
-34.666
-35.528
-36.302
-36.943
-37.799
-38.546
-39.319
-40.144
-40.92
154.6
153.074
151.617
150.014
148.442
146.825
145.214
143.56
2.55
2.6
49.939
49.177
48.019
47.141
46.394
45.454
44.657
44.083
43.291
42.549
42.041
41.37
2.65
2.7
58.859
57.062
55.299
53.505
51.724
50.021
48.207
46.489
44.764
43.022
41.268
39.547
37.829
36.098
34.368
32.629
30.936
29.22
2.75
2.8
2.85
2.9
141.782
140.078
138.23
2.95
3
136.357
134.738
132.754
130.875
128.954
126.955
124.995
123.081
121.057
119.195
117.253
115.36
3.05
3.1
3.15
3.2
41.387
41.301
41.239
41.638
41.81
3.25
3.3
3.35
3.4
42.12
3.45
3.5
42.727
43.424
44.082
45.12
3.55
3.6
27.529
25.838
-41.673
-42.467
113.481
MMG3013NT1
RF Device Data
Freescale Semiconductor
9
1.7
7.62
0.305 diameter
2.49
3.48
0.58
5.33
2.54
1.27
1.27
0.86
0.64
3.86
NOTES:
1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE
USED IN PCB LAYOUT DESIGN.
2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS
POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN.
3. IF VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THEN
AS MANY VIAS AS POSSIBLE SHOULD BE PLACED AS CLOSE TO
THE LANDING PATTERN AS POSSIBLE FOR OPTIMAL THERMAL
AND RF PERFORMANCE.
Recommended Solder Stencil
4. RECOMMENDED VIA PATTERN SHOWN HAS 0.381 x 0.762 MM
PITCH.
Figure 20. Recommended Mounting Configuration
MMG3013NT1
RF Device Data
Freescale Semiconductor
10
PACKAGE DIMENSIONS
3
4
4.70
4.40
A
1.87
1.79
M
0.15
C A B
0.60
0.40
2X R0.15 TYP
B
1.70
1.40
°
2X 4 TYP
2.70
2.40
3
4
4.50
3.70
1.30
0.70
5
2X
1
2
3
M
0.20
C B
0.48
0.38
0.48
0.38
M
0.15
C A B
0.58
0.48
M
0.15
C A B
0.46
0.40
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. ALL DIMENSIONS ARE IN MILLIMETERS.
3. DIMENSION DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS
OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE
BURRS SHALL NOT EXCEED 0.5MM PER END. DIMENSION DOES
NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD
FLASH OR PROTRUSION SHALL NOT EXCEED 0.5MM PER SIDE.
4. DIMENSIONS ARE DETERMINED AT THE OUTMOST EXTREMES
OF THE PLASTIC BODY EXCLUSIVE OF MOLD FLASH, TIE BAR
BURRS, GATE BURRS AND INTERLEAD FLASH, BUT INCLUDING
ANY MISMATCH BETWEEN THE TOP AND BOTTOM OF THE
PLASTIC BODY.
°
2X 4 TYP
E.P.
2X R0.20
5. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY.
4X
0.10 C
1.35
1.25
SEATING PLANE
0.65
0.55
C
1.50
1.50
1.65
1.55
STYLE 1:
PIN 1. RF INPUT
2. GROUND
3. RF OUTPUT
CASE 1514-01
ISSUE C
BOTTOM VIEW
SOT-89
PLASTIC
MMG3013NT1
RF Device Data
Freescale Semiconductor
11
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Document Number: MMG3013NT1
Rev. 2, 8/2005
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