MRF6S19200H [FREESCALE]
RF Power Field Effect Transistors; 射频功率场效应晶体管
| 型号： | MRF6S19200H |
| 厂家： | 
Freescale |
| 描述： | RF Power Field Effect Transistors |
| 文件： | 总12页 (文件大小：404K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MRF6S19200H
Rev. 0, 3/2008
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1930 to
1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
used in Class AB and Class C for PCN-PCS/cellular radio applications.
MRF6S19200HR3
MRF6S19200HSR3
• Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ
=
1600 mA, Pout = 56 Watts Avg., Full Frequency Band, 3GPP Test Model 1,
64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
1930-1990 MHz, 56 W AVG., 28 V
SINGLE W-CDMA
Power Gain — 17.9 dB
Drain Efficiency — 29.5%
Device Output Signal PAR — 5.9 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — -36 dBc in 3.84 MHz Channel Bandwidth
LATERAL N-CHANNEL
RF POWER MOSFETs
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 130 Watts CW
Output Power
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
CASE 465-06, STYLE 1
NI-780
• Integrated ESD Protection
MRF6S19200HR3
• Greater Negative Gate-Source Voltage Range for Improved Class C
Operation
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
CASE 465A-06, STYLE 1
NI-780S
MRF6S19200HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
-0.5, +66
-6.0, +10
32, +0
Unit
Vdc
Vdc
Vdc
°C
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
V
DSS
V
GS
DD
V
Storage Temperature Range
Case Operating Temperature
T
stg
- 65 to +150
150
T
°C
C
(1,2)
Operating Junction Temperature
T
225
°C
J
CW Operation @ T = 25°C
Derate above 25°C
CW
130
0.49
W
W/°C
C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
Case Temperature 110°C, 89 W CW
Case Temperature 100°C, 55 W CW
R
θ
JC
°C/W
0.35
0.36
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
Machine Model (per EIA/JESD22-A115)
Charge Device Model (per JESD22-C101)
1B (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
I
—
—
—
—
—
—
10
1
μAdc
μAdc
μAdc
DSS
DSS
GSS
(V = 66 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 28 Vdc, V = 0 Vdc)
DS
GS
Gate-Source Leakage Current
10
(V = 5 Vdc, V = 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 372 μAdc)
V
V
1
2
2
3
3
4
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I = 1600 mAdc, Measured in Functional Test)
DD
D
Drain-Source On-Voltage
(V = 10 Vdc, I = 3.71 Adc)
V
0.1
0.2
0.3
GS
D
(1)
Dynamic Characteristics
Reverse Transfer Capacitance
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
—
—
—
—
—
—
pF
pF
pF
2.3
185
503
rss
GS
Output Capacitance
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
oss
GS
Input Capacitance
C
iss
(V = 28 Vdc, V = 0 Vdc 30 mV(rms)ac @ 1 MHz)
DS
GS
Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I
= 1600 mA, P = 56 W Avg., f = 1932.5 MHz and
out
DD
DQ
f = 1987.5 MHz, Single-Carrier W-CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.
Power Gain
G
15
26
5.5
—
17.9
29.5
5.9
19
—
dB
ps
Drain Efficiency
η
%
dB
D
Output Peak-to-Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
PAR
ACPR
IRL
—
-36
-14
-34
-8
dBc
—
dB
1. Part internally matched both on input and output.
(continued)
MRF6S19200HR3 MRF6S19200HSR3
RF Device Data
Freescale Semiconductor
2
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted) (continued)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 1600 mA, 1930-1990 MHz Bandwidth
DD
DQ
IMD Symmetry @ 130 W PEP, P where IMD Third Order
IMD
MHz
out
sym
—
—
20
50
—
—
Intermodulation ` 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
VBW
MHz
res
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 60 MHz Bandwidth @ P = 56 W Avg.
G
—
—
0.6
—
—
dB
out
F
Average Deviation from Linear Phase in 60 MHz Bandwidth
Φ
1.94
°
@ P = 130 W CW
out
Average Group Delay @ P = 130 W CW, f = 1960 MHz
Delay
—
—
2.44
59.4
—
—
ns
out
Part-to-Part Insertion Phase Variation @ P = 130 W CW,
ΔΦ
°
out
f = 1960 MHz, Six Sigma Window
Gain Variation over Temperature
ΔG
—
0.04
—
dB/°C
(-30°C to +85°C)
MRF6S19200HR3 MRF6S19200HSR3
RF Device Data
Freescale Semiconductor
3
B1
R2
V
SUPPLY
V
+
+
BIAS
+
C5
C7
C9
C11
C14
R1
C2
C4
C1
Z8
Z10
RF
OUTPUT
Z5
Z6
Z7
Z11
Z12 Z13 Z14
Z15
RF
INPUT
Z1
Z2
Z3
Z4
C13
Z9
C3
DUT
V
SUPPLY
+
+
C12
C6
C8
C10
C15
Z1
0.859″ x 0.084″ Microstrip
0.470″ x 0.084″ Microstrip
0.362″ x 0.244″ Microstrip
0.145″ x 1.040″ Microstrip
0.040″ x 0.257″ Microstrip
0.418″ x 1.040″ Microstrip
0.103″ x 1.203″ Microstrip
0.198″ x 0.160″ Microstrip
Z10
0.547″ x 1.203″ Microstrip
0.119″ x 0.755″ Microstrip
0.222″ x 0.365″ Microstrip
0.225″ x 0.220″ Microstrip
0.192″ x 0.084″ Microstrip
0.843″ x 0.084″ Microstrip
Z2
Z3
Z4
Z5
Z6
Z7
Z11
Z12
Z13
Z14
Z15
PCB
Arlon CuClad 250GX-0300-55-22, 0.030″, ε = 2.55
r
Z8, Z9
Figure 1. MRF6S19200HR3(HSR3) Test Circuit Schematic
Table 5. MRF6S19200HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
Fair Rite
B1
Short Ferrite Bead
2743019447
C1
10 μF, 50 V Electrolytic Capacitor
0.1 μF, 100 V Capacitors
EMVY500ADA100MF55G
CDR33BX104AKYS
Nippon Chemi-Con
Kemet
C2, C9, C10
C3, C13
C4, C5, C6
C7, C8
C11, C12
C14, C15
R1
33 pF Chip Capacitors
ATC100B330JT500XT
ATC100B100CT500XT
GRMSSDRG1H106KA88B
T491X226K035AT
ATC
10 pF Chip Capacitors
ATC
10 μF, 50 V Capacitors
Murata
22 μF, 35 V Tantalum Capacitors
22 μF, 50 V Electrolytic Capacitors
1000 Ω, 1/4 W Chip Resistor
10 Ω, 1/4 W Chip Resistor
Kemet
EMVY500ADA220MF55G
CRCW12061001FKEA
CRCW120610R1FKEA
Nippon Chemi-Con
Vishay
R2
Vishay
MRF6S19200HR3 MRF6S19200HSR3
RF Device Data
Freescale Semiconductor
4
B1
C7
C11
R1
C1
C5
C4
C9
C2
R2
C14
C3
C13
C10
C15
C6
C12
C8
MRF6S19200H/HS
Rev. 2
Figure 2. MRF6S19200HR3(HSR3) Test Circuit Component Layout
MRF6S19200HR3 MRF6S19200HSR3
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
21
20
19
31
30
29
η
D
G
ps
18
17
28
V
= 28 Vdc, P = 56 W (Avg.)
out
= 1600 mA, Single−Carrier W−CDMA
DD
−0.5
0
I
DQ
3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB
@ 0.01% Probability (CCDF)
IRL
16
15
14
13
−1
−5
−10
−1.5
−2
PARC
−15
−20
−2.5
1880 1900 1920 1940
1980 2000 2020 2040
1960
f, FREQUENCY (MHz)
Figure 3. Output Peak-to-Average Ratio Compression (PARC)
Broadband Performance @ Pout = 56 Watts Avg.
20
19
18
38
37
36
V
I
= 28 Vdc, P = 87 W (Avg.)
out
= 1600 mA, Single−Carrier W−CDMA
DD
η
D
DQ
G
ps
17
16
35
−2
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01%
Probability (CCDF)
IRL
−5
15
14
13
12
−2.5
−3
−10
−15
PARC
−3.5
−4
−20
−25
1880 1900 1920 1940
1980 2000 2020 2040
1960
f, FREQUENCY (MHz)
Figure 4. Output Peak-to-Average Ratio Compression (PARC)
Broadband Performance @ Pout = 87 Watts Avg.
20
19
18
17
0
V
= 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz
DD
Two−Tone Measurements, 10 MHz Tone Spacing
I
= 2400 mA
DQ
−10
−20
−30
−40
−50
2000 mA
1200 mA
1600 mA
1200 mA
I
= 800 mA
DQ
2400 mA
16
15
14
800 mA
2000 mA
100
V
= 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
DD
1600 mA
−60
1
10
100
200
1
10
, OUTPUT POWER (WATTS) PEP
200
P
, OUTPUT POWER (WATTS) PEP
P
out
out
Figure 5. Two-Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S19200HR3 MRF6S19200HSR3
RF Device Data
Freescale Semiconductor
6
TYPICAL CHARACTERISTICS
−10
−20
−30
−40
−50
−10
V
= 28 Vdc, P = 130 W (PEP), I = 1600 mA
out DQ
Two−Tone Measurements
DD
V
= 28 Vdc, I = 1600 mA
DQ
f1 = 1955 MHz, f2 = 1965 MHz
DD
−20
−30
−40
−50
−60
(f1 + f2)/2 = Center Frequency of 1960 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
IM3−L
IM3−U
IM5−U
3rd Order
IM7−L
10
IM5−L
IM7−U
5th Order
7th Order
10
−60
−70
−70
1
100
200
1
100
TWO−TONE SPACING (MHz)
P
, OUTPUT POWER (WATTS) PEP
out
Figure 7. Intermodulation Distortion Products
versus Output Power
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
1
45
40
Ideal
0
Actual
−1
35
30
25
−1 dB = 43.38 W
−2
−2 dB = 62.72 W
−3
η
D
−3 dB = 87.05 W
= 28 Vdc, I = 1600 mA, f = 1960 MHz
V
DD
DQ
−4
20
15
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF)
−5
30
40
50
60
70
80
90
P
, OUTPUT POWER (WATTS)
out
Figure 9. Output Peak-to-Average Ratio
Compression (PARC) versus Output Power
18.5
20
19
18
40
−30_C
I
= 1600 mA
f = 1960 MHz
DQ
25_C
T = −30_C
C
G
ps
18
30
20
85_C
28 V
32 V
25_C
85_C
17.5
V
= 24 V
DD
17
17
16
10
0
V
I
= 28 Vdc
= 1600 mA
DD
η
D
DQ
f = 1960 MHz
16.5
0
20
40
60
80
100
120
140
1
10
100
200
P
, OUTPUT POWER (WATTS) CW
out
P
, OUTPUT POWER (WATTS) CW
out
Figure 11. Power Gain versus Output Power
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
MRF6S19200HR3 MRF6S19200HSR3
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
8
7
6
5
10
10
10
10
90
110
130
150
170
190
210
230
250
T , JUNCTION TEMPERATURE (°C)
J
This above graph displays calculated MTTF in hours when the device
is operated at V = 28 Vdc, P = 56 W Avg., and η = 29.5%.
DD
out
D
MTTF calculator available at http:/www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 12. MTTF versus Junction Temperature
W-CDMA TEST SIGNAL
100
10
−10
−20
−30
3.84 MHz
Channel BW
1
−40
Input Signal
−50
−60
0.1
0.01
−70
−80
W−CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ 5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0.001
−ACPR in 3.84 MHz
Integrated BW
−ACPR in 3.84 MHz
Integrated BW
−90
0.0001
0
2
4
6
8
10
−100
−110
PEAK−TO−AVERAGE (dB)
Figure 13. CCDF W-CDMA 3GPP, Test Model 1,
−9 −7.2 −5.4 −3.6 −1.8
0
1.8 3.6
5.4 7.2
9
64 DPCH, 50% Clipping, Single-Carrier Test Signal
f, FREQUENCY (MHz)
Figure 14. Single-Carrier W-CDMA Spectrum
MRF6S19200HR3 MRF6S19200HSR3
RF Device Data
Freescale Semiconductor
8
Z = 5 Ω
o
f = 2040 MHz
Z
load
f = 1880 MHz
Z
source
f = 2040 MHz
f = 1880 MHz
V
= 28 Vdc, I = 1600 mA, P = 56 W Avg.
DQ out
DD
f
Z
Z
load
W
source
W
MHz
1880
1900
1920
1940
1960
1980
2000
2020
2040
2.11 - j4.27
2.05 - j4.11
1.98 - j3.95
1.92 - j3.80
1.82 - j3.63
1.72 - j3.40
1.74 - j3.17
1.71 - j3.02
1.66 - j2.85
1.99 - j0.79
1.96 - j0.64
1.92 - j0.49
1.86 - j0.34
1.78 - j0.20
1.74 + j0.01
1.77 + j0.15
1.78 + j0.29
1.75 + j0.42
Z
Z
=
=
Test circuit impedance as measured from
gate to ground.
source
Test circuit impedance as measured
from drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 15. Series Equivalent Source and Load Impedance
MRF6S19200HR3 MRF6S19200HSR3
RF Device Data
Freescale Semiconductor
9
PACKAGE DIMENSIONS
B
G
2X
Q
1
M
M
M
B
bbb
T A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
3
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
K
B
2
(FLANGE)
D
INCHES
DIM MIN MAX
MILLIMETERS
M
M
M
B
bbb
T A
MIN
33.91
9.65
MAX
34.16
9.91
A
B
1.335
0.380
0.125
0.495
0.035
0.003
1.345
0.390
0.170
0.505
0.045
0.006
C
3.18
4.32
(LID)
R
(INSULATOR)
M
N
D
12.57
0.89
0.08
12.83
1.14
0.15
E
M
M
M
M
M
M
M
bbb
T A
B
ccc
T A
T A
B
F
G
1.100 BSC
27.94 BSC
(INSULATOR)
S
(LID)
H
0.057
0.170
0.774
0.772
.118
0.067
0.210
0.786
0.788
.138
1.45
4.32
1.70
5.33
K
M
M
M
M
M
B
aaa
B
ccc
T A
M
19.66
19.60
3.00
19.96
20.00
3.51
H
N
Q
R
0.365
0.365
0.375
0.375
9.27
9.27
9.53
9.52
C
S
aaa
bbb
ccc
0.005 REF
0.010 REF
0.015 REF
0.127 REF
0.254 REF
0.381 REF
F
SEATING
PLANE
E
A
T
STYLE 1:
A
PIN 1. DRAIN
2. GATE
3. SOURCE
(FLANGE)
CASE 465-06
ISSUE G
NI-780
MRF6S19200HR3
4X U
(FLANGE)
4X Z
(LID)
B
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
2X K
2
B
(FLANGE)
D
INCHES
DIM MIN MAX
MILLIMETERS
M
M
M
bbb
T A
B
MIN
20.45
9.65
3.18
12.57
0.89
0.08
1.45
4.32
19.61
19.61
9.27
9.27
−−−
MAX
20.70
9.91
4.32
12.83
1.14
0.15
1.70
5.33
20.02
20.02
9.53
9.52
1.02
0.76
A
B
0.805
0.380
0.125
0.495
0.035
0.003
0.057
0.170
0.774
0.772
0.365
0.365
−−− 0.040
−−− 0.030
0.005 REF
0.010 REF
0.015 REF
0.815
0.390
0.170
0.505
0.045
0.006
0.067
0.210
0.786
0.788
0.375
0.375
C
D
E
(LID)
N
(LID)
R
F
M
M
M
ccc
T A
B
M
M
M
M
H
ccc
T A
T A
B
K
(INSULATOR)
S
M
(INSULATOR)
M
N
M
M
M
M
M
aaa
B
bbb
T A
B
R
S
H
U
Z
−−−
C
aaa
bbb
ccc
0.127 REF
0.254 REF
0.381 REF
3
F
SEATING
PLANE
E
A
STYLE 1:
T
PIN 1. DRAIN
2. GATE
5. SOURCE
A
(FLANGE)
CASE 465A-06
ISSUE H
NI-780S
MRF6S19200HSR3
MRF6S19200HR3 MRF6S19200HSR3
RF Device Data
Freescale Semiconductor
10
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Mar. 2008
• Initial Release of Data Sheet
MRF6S19200HR3 MRF6S19200HSR3
RF Device Data
Freescale Semiconductor
11
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Document Number: MRF6S19200H
Rev. 0, 3/2008
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