MRF6S27015NR1 [FREESCALE]
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs; 射频功率场效应晶体管N沟道增强模式横向的MOSFET
| 型号： | MRF6S27015NR1 |
| 厂家： | 
Freescale |
| 描述： | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| 文件： | 总16页 (文件大小：598K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MRF6S27015N
Rev. 0, 8/2006
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S27015NR1
MRF6S27015GNR1
Designed for CDMA base station applications with frequencies from 2000 to
2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
AB and Class C amplifier applications.
• Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ
=
2300-2700 MHz, 3 W AVG., 28 V
SINGLE W-CDMA
160 mA, Pout = 3 Watts Avg., Full Frequency Band, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 14 dB
LATERAL N-CHANNEL
RF POWER MOSFETs
Drain Efficiency — 22%
ACPR @ 5 MHz Offset — -45 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2600 MHz, 15 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
CASE 1265-08, STYLE 1
TO-270-2
PLASTIC
MRF6S27015NR1
• 200°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
CASE 1265A-02, STYLE 1
TO-270-2 GULL
PLASTIC
MRF6S27015GNR1
Table 1. Maximum Ratings
Rating
Symbol
Value
-0.5, +68
-0.5, +12
-65 to +175
200
Unit
Vdc
Vdc
°C
Drain-Source Voltage
Gate-Source Voltage
V
DSS
V
GS
Storage Temperature Range
Operating Junction Temperature
T
stg
T
J
°C
Table 2. Thermal Characteristics
Characteristic
(1,2)
Symbol
Value
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 7.5 W Avg., Two-Tone
Case Temperature 79°C, 3 W CW
R
°C/W
θ
JC
2.0
2.2
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
Machine Model (per EIA/JESD22-A115)
Charge Device Model (per JESD22-C101)
1A (Minimum)
A (Minimum)
IV (Minimum)
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°C
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
10
1
μAdc
μAdc
nAdc
DSS
DSS
GSS
(V = 68 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 28 Vdc, V = 0 Vdc)
DS
GS
Gate-Source Leakage Current
I
500
(V = 5 Vdc, V = 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 40 μAdc)
V
V
1.5
2
2.2
2.8
0.4
3.5
3.5
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
(1)
Gate Quiescent Voltage
(V = 28 Vdc, I = 160 mAdc, Measured in Functional Test)
DS
D
Drain-Source On-Voltage
(V = 10 Vdc, I = 0.4 Adc)
V
—
0.33
GS
D
(2)
Dynamic Characteristics
Reverse Transfer Capacitance
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
—
—
11.6
0.02
—
—
pF
pF
rss
GS
Output Capacitance
C
oss
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
GS
Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 160 mA, P = 3 W Avg., f = 2600 MHz, Single-Carrier
DD
DQ
out
W-CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. PAR = 8.5 dB @
0.01% Probability on CCDF.
Power Gain
G
12.5
19
14
22
16
—
dB
%
ps
Drain Efficiency
η
D
Adjacent Channel Power Ratio
Input Return Loss
ACPR
IRL
—
-45
-18
-42
-9
dBc
dB
—
1. V
= 11/10 x V . Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
GS(Q)
GG
schematic.
2. Part internally input matched.
MRF6S27015NR1 MRF6S27015GNR1
RF Device Data
Freescale Semiconductor
2
R1
V
BIAS
V
SUPPLY
+
R2
C4
C7
C8
C11
C1
Z4
C2
Z7
R3
Z18
RF
OUTPUT
Z8 Z9 Z10
Z11 Z12 Z13 Z14
Z15 Z16
Z17
RF
INPUT
Z1
Z2
Z3
Z5
Z6
C6
Z19
C3
DUT
V
SUPPLY
C5
C9
C10
Z1
0.503″ x 0.066″ Microstrip
0.905″ x 0.066″ Microstrip
Z11
0.143″ x 0.816″ Microstrip
0.101″ x 0.667″ Microstrip
0.073″ x 0.485″ Microstrip
0.120″ x 0.021″ Microstrip
0.407″ x 0.170″ Microstrip
0.714″ x 0.066″ Microstrip
0.496″ x 0.066″ Microstrip
0.475″ x 0.050″ Microstrip
0.480″ x 0.050″ Microstrip
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z12
Z13
Z14
Z15
Z16
Z17
Z18
Z19
PCB
0.371″ x 0.300″ x 0.049″ Taper
0.041″ x 0.016″ Microstrip
0.245″ x 0.851″ Microstrip
0.248″ x 0.851″ Microstrip
0.973″ x 0.050″ Microstrip
0.085″ x 0.485″ Microstrip
0.091″ x 0.667″ Microstrip
0.138″ x 0.816″ Microstrip
Taconic RF-35, 0.030″, ε = 3.5
r
Figure 1. MRF6S27015NR1(GNR1) Test Circuit Schematic
Table 6. MRF6S27015NR1(GNR1) Test Circuit Component Designations and Values
Part
Description
100 nF Chip Capacitor
Part Number
CDR33BX104AKWS
600B4R7BT250XT
Manufacturer
AVX
C1
C2
4.7 pF Chip Capacitor
ATC
C3
9.1 pF Chip Capacitor
600B9R1BT250XT
ATC
C4, C5, C6
8.2 pF Chip Capacitors
600B8R2BT250XT
ATC
C7, C8, C9, C10
10 μF, 50 V Chip Capacitors
10 μF, 35 V Tantalum Chip Capacitor
1 KΩ, 1/4 W Chip Resistor
10 KΩ,1/4 W Chip Resistor
10 Ω, 1/4 W Chip Resistor
GRM55DR61H106KA88L
T491D106K035AS
Murata
Kemet
Vishay
Vishay
Vishay
C11
R1
R2
R3
CRCW12061001F100
CRCW12061002F100
CRCW120610R0F100
MRF6S27015NR1 MRF6S27015GNR1
RF Device Data
Freescale Semiconductor
3
C4
C1
C2
R2
C11
R1
C7 C8
R3
C3
C6
C9 C10
C5
MRF6S27015N Rev. 3
Figure 2. MRF6S27015NR1(GNR1) Test Circuit Component Layout
MRF6S27015NR1 MRF6S27015GNR1
RF Device Data
Freescale Semiconductor
4
TYPICAL CHARACTERISTICS
16
15
14
24
23
22
G
ps
13
12
21
20
V
= 28 Vdc, P = 3 W (Avg.)
out
= 160 mA, Single−Carrier W−CDMA
DD
η
D
I
DQ
−5
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
IRL
11
10
9
−30
−40
−50
−60
−10
−15
ACPR
ALT1
−20
−25
8
2500 2520 2540 2560 2580 2600 2620 2640 2660 2680 2700
f, FREQUENCY (MHz)
Figure 3. Single-Carrier W-CDMA Broadband Performance
@ Pout = 3 Watts Avg.
15
14
13
32
31
30
G
ps
V
I
= 28 Vdc, P = 6 W (Avg.)
out
= 160 mA, Single−Carrier W−CDMA
DD
12
11
29
28
η
D
DQ
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
−5
IRL
10
9
−30
−40
−50
−60
−10
−15
ACPR
ALT1
8
−20
−25
7
2500 2520 2540 2560 2580 2600 2620 2640 2660 2680 2700
f, FREQUENCY (MHz)
Figure 4. Single-Carrier W-CDMA Broadband Performance
@ Pout = 6 Watts Avg.
−10
16
15
14
13
12
I
= 240 mA
DQ
V
DD
= 28 Vdc
−15
−20
−25
−30
−35
−40
−45
−50
−55
−60
f1 = 2595 MHz, f2 = 2605 MHz
Two−Tone Measurements
190 mA
I
= 80 mA
160 mA
130 mA
DQ
240 mA
190 mA
80 mA
V
= 28 Vdc
DD
130 mA
f1 = 2592 MHz, f2 = 2605 MHz
Two−Tone Measurements
160 mA
1
10
1
10
, OUTPUT POWER (WATTS) PEP
P
out
P
out
, OUTPUT POWER (WATTS) PEP
Figure 5. Two-Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S27015NR1 MRF6S27015GNR1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
−15
−20
−25
−30
−25
V
I
= 28 Vdc, P = 15 W (PEP)
out
= 160 mA
V
= 28 Vdc, I = 160 mA
DQ
f1 = 2595 MHz, f2 = 2605 MHz
DD
DD
IM3−U
IM3−L
−30
−35
−40
−45
−50
−55
−60
DQ
Two−Tone Measurements, 10 MHz Tone Spacing
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 2600 MHz
−35
−40
−45
3rd Order
5th Order
IM5−U
IM5−L
IM7−U
IM7−L
−50
−55
−60
−65
7th Order
1
10
, OUTPUT POWER (WATTS) PEP
1
10
TWO−TONE SPACING (MHz)
100
P
out
Figure 7. Intermodulation Distortion Products
versus Output Power
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
50
Ideal
P6dB = 44.3 dBm (27 W)
49
48
P3dB = 43.7 dBm (23 W)
47
46
45
44
43
P1dB = 43 dBm (20 W)
Actual
42
41
40
V
= 28 Vdc, I = 160 mA
DQ
DD
Pulsed CW, 12 μsec(on), 1% Duty Cycle
f = 2600 MHz
26
27
28
29
30
31
32
33
34
35
36
P , INPUT POWER (dBm)
in
Figure 9. Pulsed CW Output Power versus
Input Power
50
45
40
35
30
25
20
15
10
5
−20
−25
V
= 28 Vdc, I = 160 mA, f = 2600 MHz
DQ
DD
Single−Carrier W−CDMA, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01%
Probability (CCDF)
−30
−35
−40
−45
−50
−55
−60
−65
ALT1
ACPR
η
D
G
ps
1
10
P , OUTPUT POWER (WATTS) AVG.
out
Figure 10. Single-Carrier W-CDMA ACPR,
ALT1, Power Gain and Drain Efficiency
versus Output Power
MRF6S27015NR1 MRF6S27015GNR1
RF Device Data
Freescale Semiconductor
6
TYPICAL CHARACTERISTICS
18
17
16
15
14
13
12
11
10
64
15
14
13
12
11
10
I
= 160 mA
f = 2600 MHz
DQ
56
48
40
32
24
16
−30_C
G
ps
T
= −30_C
25_C
C
25_C
85_C
85_C
η
D
32 V
28 V
V
= 28 Vdc
= 160 mA
V
DD
= 24 V
DD
I
DQ
f = 2600 MHz
8
0
1
10
, OUTPUT POWER (WATTS) CW
5
10
15
20
25
30
P
out
P
out
, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain versus Output Power
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
9
25
20
15
10
5
10
3
V
= 28 Vdc, I = 160 mA
DQ
DD
WiMAX, 802.16, 64 QAM 3/4, 4 Bursts
7 MHz Channel Bandwidth, f = 2600 MHz
2.5
2
8
7
6
5
10
10
10
10
1.5
η
D
1
EVM
0.5
0
21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36
, OUTPUT POWER (dBm)
90
110
130
150
170
190
210
230
250
T , JUNCTION TEMPERATURE (°C)
J
P
out
2
Figure 13. Drain Efficiency and Error Vector
Magnitude versus Output Power
This above graph displays calculated MTTF in hours x ampere
drain current. Life tests at elevated temperatures have correlated to
better than 10% of the theoretical prediction for metal failure. Divide
2
MTTF factor by I for MTTF in a particular application.
D
Figure 14. MTTF Factor versus Junction Temperature
MRF6S27015NR1 MRF6S27015GNR1
RF Device Data
Freescale Semiconductor
7
W-CDMA TEST SIGNAL
100
10
−10
−20
3.84 MHz
Channel BW
−30
−40
−50
−60
−70
−80
−90
1
0.1
0.01
W−CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ 5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ 10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
0.001
0.0001
−ACPR in 3.84 MHz
Integrated BW
−ACPR in 3.84 MHz
Integrated BW
0
2
4
6
8
10
−100
−110
PEAK−TO−AVERAGE (dB)
Figure 15. CCDF W-CDMA 3GPP, Test Model 1,
−9 −7.2 −5.4 −3.6 −1.8
0
1.8 3.6
5.4 7.2
9
64 DPCH, 67% Clipping, Single-Carrier Test Signal
f, FREQUENCY (MHz)
Figure 16. Single-Carrier W-CDMA Spectrum
MRF6S27015NR1 MRF6S27015GNR1
RF Device Data
Freescale Semiconductor
8
Z = 5 Ω
o
f = 2700 MHz
Z
load
f = 2500 MHz
f = 2700 MHz
f = 2500 MHz
Z
source
V
DD
= 28 Vdc, I = 160 mA, P = 3 W Avg.
DQ out
f
Z
Z
load
W
source
W
MHz
2500
2525
2550
2575
2600
2625
2650
2675
2700
4.059 - j2.284
3.679 - j2.593
3.006 - j2.574
2.355 - j2.190
2.075 - j1.657
1.930 - j1.179
1.973 - j0.771
2.017 - j0.557
2.024 - j0.379
3.380 - j0.543
3.265 - j0.546
3.077 - j0.449
2.892 - j0.336
2.727 - j0.182
2.564 - j0.034
2.435 + j0.140
2.286 + j0.340
2.227 + j0.538
Z
Z
=
=
Test circuit impedance as measured from
gate to ground.
source
Test circuit impedance as measured
from drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 17. Series Equivalent Source and Load Impedance
MRF6S27015NR1 MRF6S27015GNR1
RF Device Data
Freescale Semiconductor
9
Table 7. Common Source Scattering Parameters (VDD = 28 V, IDQ = 160 mA, TC = 25°C, 50 ohm system)
S
11
S
21
S
12
S
22
f
MHz
|S
11
|
∠ φ
|S
21
|
∠ φ
|S
12
|
∠ φ
|S |
22
∠ φ
500
550
0.984
0.984
0.986
0.987
0.987
0.986
0.985
0.985
0.984
0.983
0.982
0.981
0.980
0.978
0.976
0.974
0.970
0.966
0.960
0.953
0.945
0.933
0.918
0.901
0.879
0.850
0.815
0.775
0.734
0.700
0.683
0.687
0.710
0.741
0.774
0.805
0.832
0.855
-178.2
-179.0
180.0
179.0
178.1
177.3
176.5
175.8
175.1
174.5
173.8
173.2
172.5
171.9
171.2
170.5
169.8
169.0
168.3
167.5
166.6
165.8
164.9
164.1
163.2
162.5
162.2
162.5
164.0
167.0
171.0
175.1
178.5
-179.3
-178.2
-177.8
-177.9
-178.2
1.453
1.180
0.958
0.776
0.627
0.502
0.397
0.308
0.235
0.180
0.146
0.142
0.163
0.199
0.243
0.291
0.342
0.395
0.452
0.514
0.580
0.655
0.738
0.828
0.925
1.030
1.139
1.246
1.337
1.399
1.420
1.396
1.338
1.259
1.169
1.079
0.993
0.917
39.2
36.5
0.001
0.000
0.000
0.001
0.001
0.001
0.002
0.002
0.003
0.003
0.003
0.004
0.004
0.005
0.005
0.006
0.006
0.006
0.006
0.007
0.007
0.009
0.011
0.013
0.014
0.014
0.015
0.016
0.016
0.015
0.015
0.014
0.012
0.011
0.010
0.009
0.008
0.007
-109.8
-121.0
159.6
118.4
106.5
104.2
96.0
95.6
94.0
91.2
91.2
89.9
89.2
88.9
87.4
86.5
86.3
84.6
84.8
86.9
92.5
100.3
93.7
83.6
75.4
69.1
62.8
55.8
48.2
40.3
33.2
26.5
22.1
19.8
19.7
19.7
19.6
22.6
0.870
0.888
0.901
0.911
0.921
0.931
0.940
0.944
0.951
0.956
0.962
0.965
0.969
0.973
0.976
0.980
0.983
0.986
0.988
0.990
0.993
0.992
0.994
0.996
0.997
0.998
0.995
0.991
0.984
0.976
0.966
0.957
0.951
0.948
0.947
0.947
0.948
0.950
-122.3
-127.6
-132.0
-135.8
-139.1
-142.1
-144.8
-147.3
-149.5
-151.5
-153.4
-155.2
-156.8
-158.3
-159.8
-161.1
-162.4
-163.7
-164.9
-166.1
-167.3
-168.4
-169.4
-170.4
-171.6
-172.8
-173.9
-175.0
-176.0
-176.9
-177.6
-178.0
-178.3
-178.6
-178.9
-179.2
-179.5
-179.9
600
34.4
650
33.0
700
32.3
750
32.5
800
34.1
850
37.7
900
44.5
950
56.5
1000
1050
1100
1150
1200
1250
1300
1350
1400
1450
1500
1550
1600
1650
1700
1750
1800
1850
1900
1950
2000
2050
2100
2150
2200
2250
2300
2350
75.6
98.9
118.0
129.9
136.6
140.2
141.8
142.1
141.5
140.2
138.4
135.9
132.5
128.4
123.5
117.6
110.8
102.7
93.6
83.5
73.1
62.9
53.4
45.0
37.6
31.1
25.8
21.2
MRF6S27015NR1 MRF6S27015GNR1
RF Device Data
Freescale Semiconductor
10
Table 7. Common Source Scattering Parameters (VDD = 28 V, IDQ = 160 mA, TC = 25°C, 50 ohm system) (continued)
S
11
S
21
S
12
S
22
f
MHz
|S
|
∠ φ
|S
|
∠ φ
17.2
13.7
10.6
7.9
|S
|
∠ φ
|S |
22
∠ φ
11
21
12
2400
2450
2500
2550
2600
2650
2700
2750
2800
2850
2900
2950
3000
3050
3100
3150
3200
0.873
0.887
0.897
0.907
0.914
0.919
0.926
0.931
0.936
0.940
0.942
0.945
0.947
0.949
0.950
0.953
0.955
-178.8
-179.4
-179.9
179.6
179.1
178.8
178.3
177.9
177.4
177.0
176.6
176.3
175.8
175.6
175.1
174.8
174.5
0.848
0.786
0.731
0.682
0.639
0.600
0.566
0.534
0.505
0.480
0.457
0.436
0.416
0.399
0.382
0.368
0.355
0.006
0.006
0.007
0.007
0.007
0.007
0.007
0.006
0.006
0.006
0.007
0.007
0.008
0.009
0.011
0.012
0.014
31.2
42.2
45.6
46.5
48.0
47.0
45.8
52.1
62.3
69.8
73.2
78.7
85.1
87.9
88.2
86.9
85.1
0.953
0.955
0.956
0.957
0.958
0.960
0.962
0.964
0.965
0.966
0.967
0.968
0.969
0.969
0.970
0.972
0.974
179.7
179.2
178.7
178.2
177.8
177.2
176.8
176.2
175.7
175.2
174.7
174.2
173.8
173.2
172.9
172.6
172.1
5.5
3.3
1.3
-0.6
-2.2
-3.8
-5.2
-6.5
-7.6
-8.7
-9.6
-10.5
-11.5
MRF6S27015NR1 MRF6S27015GNR1
RF Device Data
Freescale Semiconductor
11
PACKAGE DIMENSIONS
MRF6S27015NR1 MRF6S27015GNR1
RF Device Data
Freescale Semiconductor
12
MRF6S27015NR1 MRF6S27015GNR1
RF Device Data
Freescale Semiconductor
13
MRF6S27015NR1 MRF6S27015GNR1
RF Device Data
Freescale Semiconductor
14
E1
B
2X
D3
2X
E4
PIN ONE ID
GAGE
L1
PLANE
M
aaa
C
A
L
e
A1
D
M
2X
b1
D1
DETAIL Y
aaa
C A
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERE
THE LEAD EXITS THE PLASTIC BODY AT THE
TOP OF THE PARTING LINE.
4. DIMENSIONS “D1" AND “E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS “D1" AND “E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER−
MINED AT DATUM PLANE −H−.
E
A
M
bbb
C B
5. DIMENSION b1 DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE b1 DIMENSION AT MAXIMUM MATERIAL
CONDITION.
DETAIL Y
H
6. DATUMS −A− AND −B− TO BE DETERMINED AT
DATUM PLANE −H−.
A
A2
7. DIMENSIONS “D" AND “E2" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .003 PER SIDE. DIMENSIONS “D" AND “E2" DO
INCLUDE MOLD MISMATCH AND ARE DETER−
MINED AT DATUM PLANE −D−.
2X
E2
c1
SEATING
PLANE
D
E5
INCHES
DIM MIN MAX
MILLIMETERS
MIN
1.98
0.02
1.96
MAX
2.08
0.10
2.24
10.77
9.70
8.13
0.61
8.23
6.15
1.88
4.57
1.68
5.97
5.06
A
A1
A2
D
.078
.001
.077
.416
.378
.290
.016
.316
.238
.066
.150
.058
.231
.018
.082
.004
.088
E5
E3
.424 10.57
EXPOSED
HEATSINK AREA
D1
D2
D3
E
.382
.320
.024
.324
.242
.074
.180
.066
.235
.024
9.60
7.37
0.41
8.03
6.04
1.68
3.81
1.47
5.87
4.90
PIN 1
PIN 2
E1
E2
E3
E4
E5
L
D2
L1
b1
c1
e
.01 BSC
0.25 BSC
.193
.007
.199
.011
4.90
0.18
5.06
0.28
°
°
°
°
8
2
8
2
aaa
.004
0.10
PIN 3
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
BOTTOM VIEW
CASE 1265A-02
ISSUE B
TO-270-2 GULL
PLASTIC
MRF6S27015GN
MRF6S27015NR1 MRF6S27015GNR1
RF Device Data
Freescale Semiconductor
15
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Document Number: MRF6S27015N
Rev. 0, 8/2006
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