SUD35N10 [FREESCALE]

N-Channel 100 V (D-S) 175 Â°C MOSFET; N沟道100伏（D -S ）， 175 ℃的MOSFET


型号：	SUD35N10
厂家：	Freescale
描述：	N-Channel 100 V (D-S) 175 Â°C MOSFET N沟道100伏（D -S ）， 175 ℃的MOSFET
文件：	总9页 (文件大小：816K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SUD35N10-26P

N-Channel

100 V (D-S) 175 °C MOSFET

FEATURES

•

PRODUCT SUMMARY

TrenchFET^®Power MOSFET

100 % UIS Tested

V_DS(V)

r_DS(on)(Ω)

Q_g(Typ)

_D(A)^a

•

RoHS

0.026 at V_GS= 10 V

100

31 nC

COMPLIANT

APPLICATIONS

•

Primary Side Switch

TO-252

Drain Connected to Tab

Top View

Ordering Information: SUD35N10-26P-E3 (Lead (Pb)-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

100

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current (T_J= 175 °C)

I_D

12^{b, c}

10^{b, c}

I_DM

I_S

Pulsed Drain Current

50^e

6.9^{b, c}

T_C= 25 °C

T_A= 25 °C

Continuous Source-Drain Diode Current

I_AS

Avalanche Current Pulse

L = 0.1 mH

E_AS

Single Pulse Avalanche Energy

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

P_D

Maximum Power Dissipation

8.3^{b, c}

5.8^{b, c}

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambient^{b, d}

R_thJA

t ≤ 10 s

°C/W

R_thJC

Maximum Junction-to-Case

Steady State

1.5

1.8

Notes:

a. Based on T_C= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 50 °C/W.

e. Calculated based on maximum junction temperature. Package limitation current is 50 A.

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SUD35N10-26P

N-Channel

100 V (D-S) 175 °C MOSFET

SPECIFICATIONS T = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

V_DS

ΔV_DS/T_J

ΔV_GS(th)/T_J

V_GS(th)

V_GS= 0 V, I_D= 250 µA

I_D= 250 µA

Drain-Source Breakdown Voltage

100

_DSTemperature Coefficient

165

- 11

mV/°C

V_GS(th)Temperature Coefficient

Gate-Source Threshold Voltage

Gate-Source Leakage

V_DS= V_GS, I_D= 250 µA

2.5

4.4

100

I_GSS

V_DS= 0 V, V_GS

20 V

V_DS= 100 V, V_GS= 0 V

V_DS= 100 V, V_GS= 0 V, T_J= 55 °C

V_DS≥ 5 V, V_GS= 10 V

I_DSS

Zero Gate Voltage Drain Current

On-State Drain Current^a

µA

I_D(on)

r_DS(on)

g_fs

Drain-Source On-State Resistance^a

Forward Transconductance^a

V_GS= 10 V, I_D= 12 A

0.021

0.026

V_DS= 15 V, I_D= 12 A

Dynamic^b

C_iss

C_oss

C_rss

Q_g

Input Capacitance

2000

180

V_DS= 12 V, V_GS= 0 V, f = 1 MHz

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Q_gs

Q_gd

R_g

V_DS= 50 V, V_GS= 10 V, I_D= 12 A

f = 1 MHz

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

1.5

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

Rise Time

V_DD= 50 V, R_L= 5 Ω

I_D≅ 10 A, V_GEN= 10 V, R_g= 1 Ω

Turn-Off Delay Time

Fall Time

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current^a

Body Diode Voltage

I_S

I_SM

V_SD

t_rr

T_C= 25 °C

I_S= 10 A

0.8

1.2

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

Q_rr

t_a

100

150

I_F= 10 A, di/dt = 100 A/µs, T_J= 25 °C

t_b

Notes:

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

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SUD35N10-26P

N-Channel

100 V (D-S) 175 °C MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

= - 55 °C

= 10 thru 7 V

= 25 °C

= 6 V

= 125 °C

= 4 V

= 5 V

0.0

0.5

1.0

1.5

2.0

2.5

3.0

- Drain-to-Source Voltage (V)

- Gate-to-Source Voltage (V)

Output Characteristics

Transfer Characteristics

0.023

0.022

0.021

0.020

2500

2000

1500

1000

500

iss

= 10 V

oss

rss

100

- Drain Current (A)

- Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current

Capacitance

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

= 12 A

= 50 V

= 10 V

= 80 V

- 50 - 25

75 100 125 150 175

- Junction Temperature (°C)

- Total Gate Charge (nC)

On-Resistance vs. Junction Temperature

Gate Charge

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SUD35N10-26P

N-Channel

100 V (D-S) 175 °C MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

0.08

= 12 A

0.06

0.04

0.02

0.00

= 125 °C

= 25 °C

= 150 °C

= 25 °C

0.0

0.2

0.4

0.6

0.8

1.0

1.2

- Source-to-Drain Voltage (V)

- Gate-to-Source Voltage (V)

Source-Drain Diode Forward Voltage

r_DS(on)vs. V_GSvs. Temperature

4.5

4.0

3.5

3.0

2.5

2.0

1.5

200

150

100

= 250 µA

- 50 - 25

75 100 125 150 175

0.001

0.01

0.1

100

1000

- Temperature (°C)

Time (s)

Threshold Voltage

Single Pulse Power, Junction-to-Ambient

100

Limited by r

DS(on)

100 µs

1 ms

10 ms

100 ms

1 s

0.1

10 s

= 25 °C

BVDSS

Limited

Single Pulse

0.01

0.1

100

- Drain-to-Source Voltage (V)

* V

minimum V at which r

is specified

DS(on)

Safe Operating Area

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SUD35N10-26P

N-Channel

100 V (D-S) 175 °C MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

125

150

100

125

150

- Case Temperature (°C)

Power Derating

Current Derating*

* The power dissipation P_Dis based on T_J(max)= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

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SUD35N10-26P

N-Channel

100 V (D-S) 175 °C MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Duty Cycle = 0.5

0.2

Notes:

0.1

0.05

1. Duty Cycle, D =

0.02

2. Per Unit Base = R

= 40 °C/W

thJA

(t)

3. T - T = P

DM thJA

Single Pulse

4. Surface Mounted

0.01

-4

-3

-2

-1

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

100

1000

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

0.01

-4

-3

-2

-1

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Case

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SUD35N10-26P

N-Channel

100 V (D-S) 175 °C MOSFET

TO-252AA CASE OUTLINE

MILLIMETERS

MIN.

INCHES

MAX.

DIM.

MAX.

2.38

1.14

0.127

0.88

1.14

5.44

0.58

6.22

4.45

6.73

5.50

MIN.

0.087

0.035

0.001

0.028

0.030

0.206

0.018

0.235

0.161

0.255

0.177

2.21

0.89

0.030

0.71

0.76

5.23

0.46

5.97

4.10

6.48

4.49

0.094

0.045

0.005

0.035

0.045

0.214

0.023

0.245

0.175

0.265

0.217

2.28 BSC

4.57 BSC

9.65

0.090 BSC

0.180 BSC

0.380

10.41

1.78

1.02

1.27

1.52

0.410

0.070

0.040

0.050

0.060

1.40

0.64

0.89

1.15

0.055

0.025

0.035

0.040

ECN: T11-0110-Rev. L, 18-Apr-11

DWG: 5347

Note

Dimension L3 is for reference only.

•

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SUD35N10-26P

N-Channel

100 V (D-S) 175 °C MOSFET

RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)

0.224

(5.690)

0.180

(4.572)

0.055

(1.397)

Recommended Minimum Pads

Dimensions in Inches/(mm)

Return to Index

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SUD35N10-26P

N-Channel

100 V (D-S) 175 °C MOSFET

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SUD35N10 [FREESCALE]

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