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SUD40N02-08_09 [VISHAY]

N-Channel 20-V (D-S), 175C MOSFET; N通道20 -V （D -S ） ， 175℃ MOSFET
SUD40N02-08_09
型号： SUD40N02-08_09
厂家： VISHAY    VISHAY
描述：

N-Channel 20-V (D-S), 175C MOSFET
N通道20 -V （D -S ） ， 175℃ MOSFET
文件： 总5页 (文件大小：73K)
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SUD40N02-08  
Vishay Siliconix  
N-Channel 20-V (D-S), 175_C MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFET  
VDS (V)  
rDS(on)  
(
ꢀ
)
ID (A)a  
D 175_C Maximum Junction Temperature  
D 100% Rg Tested  
0.0085 @ V = 4.5 V  
40  
40  
GS  
20  
0.014 @ V = 2.5 V  
GS  
D
TO-252  
G
Drain Connected to Tab  
G
D
S
Top View  
Order Number:  
SUD40N02-08  
S
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
Limit  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
20  
"12  
40  
DS  
GS  
V
V
T
= 25_C  
= 100_C  
C
a
Continuous Drain Current  
I
D
T
40  
C
A
Pulsed Drain Current  
I
100  
40  
DM  
a
Continuous Source Current (Diode Conduction)  
I
S
T
= 25_C  
= 25_C  
71  
C
Maximum Power Dissipation  
P
D
W
b, c  
8.3  
T
A
Operating Junction and Storage Temperature Range  
T , T  
-55 to 175  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec.  
15  
18  
b
Maximum Junction-to-Ambient  
R
thJA  
R
thJC  
Steady State  
40  
50  
_C/W  
Maximum Junction-to-Case  
1.75  
2.1  
Notes  
a. Package Limited  
b. Surface Mounted on 1” x 1” FR4 Board  
c. t v 10 sec  
Document Number: 71422  
S-31724—Rev. B, 18-Aug-03  
www.vishay.com  
1
 
SUD40N02-08  
Vishay Siliconix  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typa  
Max  
Unit  
Static  
V
= 0 V, I = 250 ꢁ A  
D
Drain-Source Breakdown Voltage  
Gate Threshold Voltage  
Gate-Body Leakage  
V
20  
GS  
(BR)DSS  
V
V
V
DS  
= V , I = 250 ꢁ A  
0.6  
GS(th)  
GS  
D
V
DS  
= 0 V, V = "12 V  
GS  
I
"100  
1
nA  
GSS  
V
= 20 V, V = 0 V  
GS  
DS  
Zero Gate Voltage Drain Current  
I
ꢁ
A
DSS  
V
V
= 20 V, V = 0 V, T = 125_C  
50  
DS  
GS  
J
b
On-State Drain Current  
I
V
DS  
= 5 V, V = 4.5 V  
40  
20  
A
D(on)  
GS  
V
= 4.5 V, I = 20 A  
0.0068  
0.0104  
0.011  
0.0085  
0.013  
0.014  
GS  
D
b
= 4.5 V, I = 20 A, T = 125_C  
V
Drain-Source On-State Resistance  
r
ꢀ
GS  
D
J
DS(on)  
= 2.5 V, I = 20 A  
D
GS  
b
Forward Transconductance  
g
fs  
V
= 5 V, I = 40 A  
S
DS  
D
Dynamica  
Input Capacitance  
C
C
2660  
730  
375  
26  
iss  
V
GS  
= 0 V, V = 20 V, f = 1 MHz  
DS  
Output Capacitance  
pF  
oss  
Reverse Transfer Capacitance  
C
rss  
c
Total Gate Charge  
Q
35  
g
c
Gate-Source Charge  
Q
Q
5
V
DS  
= 10 V, V = 4.5 V, I = 40 A  
nC  
gs  
gd  
GS  
D
c
Gate-Drain Charge  
7
Gate Resistance  
R
1
3.7  
35  
ꢀ
g
c
Turn-On Delay Time  
t
20  
120  
45  
d(on)  
c
Rise Time  
t
r
190  
70  
V
= 10 V, R = 0.25 ꢀ  
L
GEN G  
DD  
ns  
c
I
D
^ 40 A, V  
= 4.5 V, R = 2.5 ꢀ  
Turn-Off Delay Time  
t
d(off)  
c
Fall Time  
t
f
20  
35  
Source-Drain Diode Ratings and Characteristic (TC = 25_C)  
Pulsed Current  
I
100  
1.5  
70  
A
V
SM  
b
Diode Forward Voltage  
V
SD  
I
F
= 100 A, V = 0 V  
1.2  
35  
GS  
Source-Drain Reverse Recovery Time  
t
rr  
I
F
= 40 A, di/dt = 100 A/ꢁ s  
ns  
Notes  
a. Guaranteed by design, not subject to production testing.  
b. Pulse test; pulse width v 300 ꢁ s, duty cycle v 2%.  
c. Independent of operating temperature.  
Document Number: 71422  
S-31724—Rev. B, 18-Aug-03  
www.vishay.com  
2
 
SUD40N02-08  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
100  
100  
80  
60  
40  
20  
0
V
= 4.5 thru 3 V  
GS  
80  
60  
40  
20  
0
2.5 V  
2 V  
T
= 125_C  
C
25_C  
-55_C  
1, 0.5 V  
8
0
2
4
6
10  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
V
DS  
- Drain-to-Source Voltage (V)  
V
GS  
- Gate-to-Source Voltage (V)  
Transconductance  
On-Resistance vs. Drain Current  
120  
100  
80  
60  
40  
20  
0
0.020  
0.015  
0.010  
0.005  
0.000  
T
= -55_C  
C
25_C  
V
GS  
= 2.5 V  
125_C  
V
GS  
= 4.5 V  
0
20  
40  
60  
80  
100  
0
20  
40  
60  
80  
100  
V
GS  
- Gate-to-Source Voltage (V)  
I
D
- Drain Current (A)  
Capacitance  
Gate Charge  
4500  
3600  
2700  
1800  
900  
12  
9
V
D
= 10 V  
GS  
I
= 40 A  
C
iss  
6
C
oss  
3
C
rss  
0
0
0
4
8
12  
16  
20  
0
10  
20  
g
30  
40  
50  
60  
70  
V
- Drain-to-Source Voltage (V)  
Q
- Total Gate Charge (nC)  
DS  
Document Number: 71422  
S-31724—Rev. B, 18-Aug-03  
www.vishay.com  
3
SUD40N02-08  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
On-Resistancevs. Junction Temperature  
Source-Drain Diode Forward Voltage  
2.0  
100  
V
D
= 4.5 V  
GS  
I
= 20 A  
1.6  
1.2  
0.8  
0.4  
0.0  
T = 150_C  
J
T = 25_C  
J
10  
1
-50 -25  
0
25  
50  
75 100 125 150 175  
0
0.3  
V
0.6  
0.9  
1.2  
1.5  
T
- Junction Temperature (_C)  
- Source-to-Drain Voltage (V)  
J
SD  
THERMAL RATINGS  
Maximum Avalanche Drain Current  
vs. Case Temperature  
Safe Operating Area  
200  
100  
50  
40  
30  
20  
10  
0
10 ꢁs  
Limited  
by r  
100 ꢁ s  
DS(on)  
10  
1 ms  
10 ms  
100 ms  
dc  
T
= 25_C  
C
Single Pulse  
1
0.1  
0
25  
50  
75  
100  
125  
150  
175  
1
10  
100  
V
DS  
- Drain-to-Source Voltage (V)  
T
- Case Temperature (_C)  
C
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
Square Wave Pulse Duration (sec)  
10  
100  
600  
1
Document Number: 71422  
S-31724—Rev. B, 18-Aug-03  
www.vishay.com  
4
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

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