SUD40N03-18P [VISHAY]
N-Channel 30-V (D-S) 175C MOSFET; N通道30 -V ( D- S) 175℃ MOSFET![SUD40N03-18P](http://pdffile.icpdf.com/pdf1/p00033/img/icpdf/SUD40N03-18P_171227_icpdf.jpg)
型号: | SUD40N03-18P |
厂家: | ![]() |
描述: | N-Channel 30-V (D-S) 175C MOSFET |
文件: | 总4页 (文件大小:59K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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SUD40N03-18P
Vishay Siliconix
New Product
N-Channel 30-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)a
0.018 @ V = 10 V
"40
"34
GS
30
0.027 @ V = 4.5 V
GS
D
TO-252
G
Drain Connected to Tab
G
D
S
Top View
Order Number:
SUD40N03-18P
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
30
"20
"40
"28
"100
40
DS
GS
V
V
T
= 25_C
= 100_C
C
b
Continuous Drain Current (T = 175_C)
I
J
D
T
C
A
Pulsed Drain Current
I
DM
a
Continuous Source Current (Diode Conduction)
I
S
c
T
= 25_C
= 25_C
62.5
C
Maximum Power Dissipation
P
D
W
b
T
A
7.5
Operating Junction and Storage Temperature Range
T , T
–55 to 175
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
17
50
2
20
60
b
Junction-to-Ambient
R
thJA
Steady State
C/W
_C/W
Junction-to-Case
Junction-to-Lead
R
thJC
2.4
4.8
R
4
thJL
Notes
a. Package Limited.
b. Surface Mounted on 1” x1” FR4 Board, t v 10 sec.
c. See SOA curve for voltage derating.
Document Number: 71086
S-63636—Rev. A, 08-Nov-99
www.vishay.com S FaxBack 408-970-5600
2-1
SUD40N03-18P
New Product
Vishay Siliconix
SPECIFICATIONS (T = _2C5 UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
V
= 0 V, I = 250 mA
D
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
30
GS
(BR)DSS
V
V
V
DS
= V , I = 250 mA
1.0
GS(th)
GS
D
V
DS
= 0 V, V = "20 V
GS
I
"100
1
nA
mA
A
GSS
V
= 24 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
DSS
V
= 24 V, V = 0 V, T = 125_C
V
50
DS
GS
J
b
On-State Drain Current
I
= 5 V, V = 10 V
40
10
D(on)
DS
GS
V
= 10 V, I = 20 A
0.014
0.021
0.018
0.029
0.027
GS
D
b
Drain-Source On-State Resistance
r
V
= 10 V, I = 20 A, T = 125_C
V
W
DS(on)
GS
D
J
= 4.5 V, I = 10 A
D
GS
b
Forward Transconductance
g
fs
V
= 15 V, I = 20 A
S
DS
D
Dynamica
Input Capacitance
C
C
1300
340
95
19
5
iss
V
= 0 V, V = 25 V, F = 1 MHz
DS
Output Capacitance
pF
nC
GS
oss
Reverse Transfer Capacitance
C
rss
c
Total Gate Charge
Q
30
g
c
Gate-Source Charge
Q
V
DS
= 15 V, V = 10 V, I = 40 A
GS D
gs
gd
c
Gate-Drain Charge
Q
3
c
Turn-On Delay Time
t
t
8
12
13
25
9
d(on)
c
Rise Time
t
r
8.5
17
6
V
= 15 V, R = 0.37 W
L
= 10 V, R = 2.5 W
GEN G
DD
ns
I
D
^ 40 A, V
c
Turn-Off Delay Time
d(off)
c
Fall Time
t
f
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Continuous Current
I
40
S
A
Pulsed Current
I
80
1.5
50
SM
b
Diode Forward Voltage
V
I
= 100 A, V = 0 V
V
SD
F
GS
Source-Drain Reverse Recovery Time
t
rr
I
F
= 40 A, di/dt = 100 A/ms
30
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
Document Number: 71086
S-63636—Rev. A, 08-Nov-99
www.vishay.com S FaxBack 408-970-5600
2-2
SUD40N03-18P
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Output Characteristics
Transfer Characteristics
160
120
80
40
0
160
V
GS
= 10 thru 8 V
T
C
= –55_C
6 V
6 V
120
80
40
0
25_C
125_C
5 V
4 V
2, 3 V
0
2
4
6
8
10
0
2
4
6
8
10
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
60
50
40
30
20
10
0
0.06
0.05
0.04
0.03
0.02
0.01
0
T
C
= –55_C
25_C
125_C
V
GS
= 4.5 V
V
GS
= 10 V
0
20
40
D
60
80
100
120
0
20
40
60
80
100
120
I
– Drain Current (A)
I
– Drain Current (A)
D
Capacitance
Gate Charge
1800
1500
1200
900
600
300
0
20
16
12
8
V
= 15 V
= 40 A
DS
I
D
C
iss
C
oss
4
C
rss
0
0
5
10
15
20
25
30
0
10
20
30
40
V
DS
– Drain-to-Source Voltage (V)
Q – Total Gate Charge (nC)
g
Document Number: 71086
S-63636—Rev. A, 08-Nov-99
www.vishay.com S FaxBack 408-970-5600
2-3
SUD40N03-18P
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.0
1.6
1.2
0.8
0.4
0
100
10
1
V
= 10 V
= 40 A
GS
I
D
T = 175_C
J
T = 25_C
J
–50 –25
0
25
50
75 100 125 150 175
0
0.3
V
0.6
0.9
1.2
1.5
T
J
– Junction Temperature (_C)
– Source-to-Drain Voltage (V)
SD
THERMAL RATINGS
Maximum Avalanche Drain Current vs.
Case Temperature
Safe Operating Area
500
50
40
30
20
10
0
10, 100 ms
100
10
1
Limited
by r
DS(on)
1 ms
10 ms
100 ms
1 s
dc
T
= 25_C
C
Single Pulse
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
V
DS
– Drain-to-Source Voltage (V)
T
C
– Case Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
10
Square Wave Pulse Duration (sec)
1
10
30
Document Number: 71086
S-63636—Rev. A, 08-Nov-99
www.vishay.com S FaxBack 408-970-5600
2-4
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SUD40N04-10A-E3
TRANSISTOR 40 A, 40 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, TO-252, 3 PIN, FET General Purpose Power
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