SUD40N06-25L [FREESCALE]
N-Channel 60 V (D-S) 175 °C MOSFET; N沟道60 V (D -S ), 175 ℃的MOSFET型号: | SUD40N06-25L |
厂家: | Freescale |
描述: | N-Channel 60 V (D-S) 175 °C MOSFET |
文件: | 总5页 (文件大小:371K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
_C/W
SUD40N06-25L
N-Channel
60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)a
30
0.022 @ V = 10 V
GS
60
0.025 @ V = 4.5 V
30
GS
D
TO-252
G
Drain Connected to Tab
G
D
S
Top View
S
Order Number:
SUD40N06-25L
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)
C
Parameter
Symbol
Limit
"20
30
Unit
Gate-Source Voltage
V
GS
V
T
= 25_C
C
b
Continuous Drain Current (T = 175_C)
I
D
J
T
C
= 100_C
30
Pulsed Drain Current
I
100
34
A
DM
Continuous Source Current (Diode Conduction)
Avalanche Current
I
S
I
34
AR
Repetitive Avalanche Energy (Duty Cycle v 1%)
L = 0.1 mH
E
58
mJ
W
AR
T
C
= 25_C
= 25_C
75
Maximum Power Dissipation
P
D
b
c
T
1.4 , 2.5
A
Operating Junction and Storage Temperature Range
T , T
J
–55 to 175
_C
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
60
Unit
Free Air, FR4 Board Mount
Free Air, Vertical Mount
Maximum Junction-to-Ambient
Maximum Junction-to-Case
R
thJA
thJC
110
R
2.0
Notes:
a. Package limited.
b. Free air, vertical mount.
c. Surface mounted on 1” x 1” FR4 Board, t v 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
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SUD40N06-25L
N-Channel
60 V (D-S) 175 °C MOSFET
SPECIFICATIONS (T = _2C5 UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
Drain-Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
60
(BR)DSS
D
V
Gate Threshold Voltage
Gate-Body Leakage
V
V
V
= V , I = 250 mA
1.0
2.0
3.0
"100
1
GS(th)
DS
GS
D
= 0 V, V = "20 V
I
nA
DS
GS
GSS
V
= 60 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
V
V
= 60 V, V = 0 V, T = 125_C
50
mA
DSS
DS
GS
J
= 60 V, V = 0 V, T = 175_C
150
DS
GS
J
b
On-State Drain Current
I
V
DS
= 5 V, V = 10 V
20
A
D(on)
GS
V
= 10 V, I = 20 A
0.022
0.043
0.053
GS
D
V
V
= 10 V, I = 20 A, T = 125_C
= 10 V, I = 20 A, T = 175_C
GS
D
J
b
Drain-Source On-State Resistance
r
W
DS(on)
GS
D
J
V
GS
= 4.5 V, I = 20 A
0.025
D
b
Forward Transconductance
g
fs
V
DS
= 15 V, I = 20 A
S
D
Dynamic
Input Capacitance
C
1800
350
100
40
9
iss
Output Capacitance
C
oss
V
= 0 V, V = 25 V, f = 1 MHz
pF
nC
GS
DS
Reverse Transfer Capacitance
C
rss
c
Total Gate Charge
Q
60
g
c
Gate-Source Charge
Q
Q
V
= 30 V, V = 10 V, I = 40 A
gs
gd
DS GS D
c
Gate-Drain Charge
10
10
9
c
Turn-On Delay Time
t
20
20
50
15
d(on)
c
Rise Time
t
r
V
DD
= 30 V, R = 0.9 W
L
ns
I
D
^ 20 A, V
= 10 V, R = 2.5 W
GEN G
c
Turn-Off Delay Time
t
28
7
d(off)
c
Fall Time
t
f
Source-Drain Diode Ratings and Characteristics (TC = 25_C)
Pulsed Current
I
A
V
20
1.5
100
SM
Diode Forward Voltage
Reverse Recovery Time
V
I
= 20 A, V = 0 V
1.0
48
SD
F
GS
t
I
F
= 20 A, di/dt = 100 A/ms
ns
rr
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
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SUD40N06-25L
N-Channel
60 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Output Characteristics
Transfer Characteristics
100
60
45
30
15
0
6 V
5 V
V
GS
= 10, 9, 8, 7 V
80
60
40
20
0
4 V
T
C
= 125_C
3 V
8
25_C
–55_C
0
2
4
6
10
0
1
2
3
4
5
6
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
70
60
50
40
30
20
10
0
0.04
0.03
0.02
0.01
0
T
C
= –55_C
25_C
V
GS
= 4.5 V
V
GS
= 10 V
125_C
0
12
24
36
48
60
0
15
30
45
60
I
D
– Drain Current (A)
I
D
– Drain Current (A)
Capacitance
Gate Charge
3000
2500
2000
1500
1000
500
10
8
V
= 30 V
= 20 A
DS
I
D
C
iss
6
4
C
oss
2
C
rss
0
0
0
10
20
30
40
50
60
0
10
20
Q – Total Gate Charge (nC)
g
30
40
50
V
– Drain-to-Source Voltage (V)
DS
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SUD40N06-25L
N-Channel
60 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.5
2.0
1.5
1.0
0.5
0
100
V
= 10 V
= 20 A
GS
I
D
T = 150_C
J
T = 25_C
J
10
1
–50 –25
0
25
50
75 100 125 150 175
0.3
V
0.6
0.9
1.2
1.5
T
J
– Junction Temperature (_C)
– Source-to-Drain Voltage (V)
SD
THERMAL RATINGS
Drain Current vs. Case Temperature
Safe Operating Area
200
100
50
40
30
20
10
0
Limited
by r
DS(on)
100 ms
10
1
1 ms
10 ms
100 ms
dc, 1 s
T
= 25_C
C
Single Pulse
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
T
C
– Case Temperature (_C)
V
DS
– Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
Single Pulse
10
0.01
–4
–3
–2
–1
10
10
10
1
3
Square Wave Pulse Duration (sec)
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SUD40N06-25L
N-Channel
60 V (D-S) 175 °C MOSFET
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相关型号:
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TRANSISTOR 40 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, LEAD FREE, TO-252, 3 PIN, FET General Purpose Power
VISHAY
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