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SUD40N10-25 [VISHAY]

N-Channel 100-V (D-S) 175`C MOSFET; N沟道100 -V （ D- S） 175℃ MOSFET
SUD40N10-25
型号： SUD40N10-25
厂家： VISHAY    VISHAY
描述：

N-Channel 100-V (D-S) 175`C MOSFET
N沟道100 -V （ D- S） 175℃ MOSFET

晶体 晶体管 功率场效应晶体管 脉冲
文件： 总4页 (文件大小：61K)
中文：  中文翻译
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_C/W  
SUD40N10-25  
Vishay Siliconix  
New Product  
N-Channel 100-V (D-S) 175_C MOSFET  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.025 @ V = 10 V  
40  
38  
GS  
100  
0.028 @ V = 4.5 V  
GS  
D
TO-252  
G
Drain Connected to Tab  
G
D
S
Top View  
Order Number:  
SUD40N10-25  
S
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
Limit  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
100  
"20  
40  
DS  
GS  
V
V
T
= 25_C  
= 125_C  
C
b
Continuous Drain Current (T = 175_C)  
I
D
J
T
C
23  
Pulsed Drain Current  
I
70  
A
DM  
Continuous Source Current (Diode Conduction)  
Avalanche Current  
I
40  
S
I
40  
AR  
Repetitive Avalanche Energy (Duty Cycle v 1%)  
L = 0.1 mH  
E
80  
mJ  
W
AR  
b
T
C
= 25_C  
= 25_C  
33  
Maximum Power Dissipation  
P
D
a
T
3
A
Operating Junction and Storage Temperature Range  
T , T  
–55 to 175  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
15  
40  
18  
50  
a
Junction-to-Ambient  
R
thJA  
thJC  
Steady State  
Junction-to-Case  
R
1.2  
1.5  
Notes  
a. Surface Mounted on 1” x1” FR4 Board.  
b. See SOA curve for voltage derating.  
Document Number: 71140  
S–00171—Rev. A, 14-Feb-00  
www.vishay.com S FaxBack 408-970-5600  
2-1  
SUD40N10-25  
New Product  
Vishay Siliconix  
SPECIFICATIONS (T = _2C5 UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typa  
Max  
Unit  
Static  
V
= 0 V, I = 250 mA  
D
Drain-Source Breakdown Voltage  
Gate Threshold Voltage  
Gate-Body Leakage  
V
100  
1.0  
GS  
(BR)DSS  
V
V
V
DS  
= V , I = 250 mA  
3.0  
"100  
1
GS(th)  
GS  
D
V
DS  
= 0 V, V = "20 V  
GS  
I
nA  
GSS  
V
= 80 V, V = 0 V  
GS  
DS  
Zero Gate Voltage Drain Current  
I
V
V
= 80 V, V = 0 V, T = 125_C  
50  
mA  
DSS  
DS  
GS  
J
= 80 V, V = 0 V, T = 175_C  
250  
DS  
GS  
J
b
On-State Drain Current  
I
V
DS  
= 5 V, V = 10 V  
70  
A
D(on)  
GS  
V
= 10 V, I = 40 A  
0.02  
0.025  
0.05  
GS  
D
V
V
= 10 V, I = 40 A, T = 125_C  
GS  
D
J
b
Drain-Source On-State Resistance  
r
W
DS(on)  
= 10 V, I = 40 A, T = 175_C  
0.063  
0.028  
GS  
D
J
V
GS  
= 4.5 V, I = 20 A  
0.022  
70  
D
b
Forward Transconductance  
g
fs  
V
= 15 V, I = 40 A  
S
DS  
D
Dynamica  
Input Capacitance  
C
C
2400  
290  
120  
40  
11  
iss  
V
= 0 V, V = 25 V, F = 1 MHz  
DS  
Output Capacitance  
pF  
nC  
GS  
oss  
Reverse Transfer Capacitance  
C
rss  
c
Total Gate Charge  
Q
60  
g
c
Gate-Source Charge  
Q
V
DS  
= 50 V, V = 10 V, I = 40 A  
GS D  
gs  
gd  
c
Gate-Drain Charge  
Q
9
c
Turn-On Delay Time  
t
t
8
13  
60  
d(on)  
c
Rise Time  
t
r
40  
15  
80  
V
= 50 V, R = 1.25 W  
L
= 10 V, R = 2.5 W  
GEN G  
DD  
ns  
I
D
^ 40 A, V  
c
Turn-Off Delay Time  
25  
d(off)  
c
Fall Time  
t
f
120  
Source-Drain Diode Ratings and Characteristic (TC = 25_C)  
Pulsed Current  
I
70  
1.5  
120  
A
V
SM  
b
Diode Forward Voltage  
V
SD  
I
F
= 40 A, V = 0 V  
1.0  
75  
GS  
Source-Drain Reverse Recovery Time  
t
rr  
I
F
= 40 A, di/dt = 100 A/ms  
ns  
Notes  
a. Guaranteed by design, not subject to production testing.  
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
c. Independent of operating temperature.  
Document Number: 71140  
S–00171—Rev. A, 14-Feb-00  
www.vishay.com S FaxBack 408-970-5600  
2-2  
SUD40N10-25  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
160  
120  
80  
40  
0
100  
V
GS  
= 10 thru 6 V  
5 V  
80  
60  
40  
20  
0
4 V  
3 V  
T
C
= 125_C  
–55_C  
25_C  
0
2
4
6
8
10  
0
1
2
3
4
5
V
DS  
– Drain-to-Source Voltage (V)  
V
GS  
– Gate-to-Source Voltage (V)  
Transconductance  
On-Resistance vs. Drain Current  
100  
80  
60  
40  
20  
0
0.05  
0.04  
0.03  
0.02  
0.01  
0
T
C
= –55_C  
25_C  
125_C  
V
GS  
= 4.5 V  
V
GS  
= 10 V  
0
10  
20  
30  
40  
50  
60  
0
20  
40  
60  
80  
100  
I
D
– Drain Current (A)  
I
D
– Drain Current (A)  
Capacitance  
Gate Charge  
4000  
3000  
2000  
1000  
0
20  
16  
12  
8
V
= 50 V  
= 40 A  
DS  
I
D
C
iss  
4
C
rss  
C
oss  
0
0
20  
40  
60  
80  
100  
0
20  
40  
60  
80  
V
DS  
– Drain-to-Source Voltage (V)  
Q – Total Gate Charge (nC)  
g
Document Number: 71140  
S–00171—Rev. A, 14-Feb-00  
www.vishay.com S FaxBack 408-970-5600  
2-3  
SUD40N10-25  
New Product  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)  
On-Resistance vs. Junction Temperature  
Source-Drain Diode Forward Voltage  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
100  
10  
1
V
= 10 V  
= 40 A  
GS  
I
D
T = 175_C  
J
T = 25_C  
J
–50 –25  
0
25  
50  
75 100 125 150 175  
0
0.3  
– Source-to-Drain Voltage (V)  
SD  
0.6  
0.9  
1.2  
T
J
– Junction Temperature (_C)  
V
THERMAL RATINGS  
Maximum Avalanche Drain Current  
vs. Case Temperature  
Safe Operating Area  
50  
40  
30  
20  
10  
0
100  
10 ms  
Limited by r  
DS(on)  
100 ms  
10  
1 ms  
10 ms  
1
100 ms  
1 s, dc  
T
= 25_C  
C
Single Pulse  
0.1  
0.1  
0
25  
50  
75  
100  
125  
150  
175  
1
10  
100  
1000  
V
DS  
– Drain-to-Source Voltage (V)  
T
C
– Case Temperature (_C)  
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.02  
0.05  
Single Pulse  
0.01  
–4  
–3  
–2  
–1  
10  
10  
10  
10  
Square Wave Pulse Duration (sec)  
1
10  
30  
Document Number: 71140  
S–00171—Rev. A, 14-Feb-00  
www.vishay.com S FaxBack 408-970-5600  
2-4  

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