SUD40N08-16 [FREESCALE]
N-Channel 80 V (D-S) 175 °C MOSFET; N沟道80 V(D -S ), 175 ℃的MOSFET型号: | SUD40N08-16 |
厂家: | Freescale |
描述: | N-Channel 80 V (D-S) 175 °C MOSFET |
文件: | 总5页 (文件大小:429K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SUD40N08-16
N-Channel
80 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
D 175_C Maximum Junction Temperature
D 100% Rg Tested
VDS (V)
rDS(on) (W)
ID (A)
80
0.016 @ V = 10 V
GS
40
D
TO-252
G
Drain Connected to Tab
G
D
S
Top View
Ordering Information:
S
SUD40N08-16
SUD40N08-16—E3 (Lead Free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
80
"20
40
DS
GS
V
V
T
= 25_C
= 125_C
C
b
Continuous Drain Current (T = 175_C)
I
D
J
T
30
C
Pulsed Drain Current
I
60
A
DM
Continuous Source Current (Diode Conduction)
Avalanche Current
I
40
S
I
40
AR
Repetitive Avalanche Energy (Duty Cycle v 1%)
L = 0.1 mH
E
AR
80
mJ
b
T
= 25_C
= 25_C
136
C
Maximum Power Dissipation
P
D
W
a
3
T
A
Operating Junction and Storage Temperature Range
T , T
−55 to 175
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
15
40
18
50
a
Junction-to-Ambient
R
thJA
R
thJC
Steady State
_C/W
Junction-to-Case
0.85
1.1
Notes
a. Surface Mounted on 1” x1” FR4 Board.
b. See SOA curve for voltage derating.
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1 / 5
SUD40N08-16
N-Channel
80 V (D-S) 175 °C MOSFET
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
V
= 0 V, I = 250 mA
D
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
80
GS
(BR)DSS
V
V
V
DS
= V , I = 250 mA
2.0
4.0
"100
1
GS(th)
GS
D
V
DS
= 0 V, V = "20 V
GS
I
nA
GSS
V
= 80 V, V = 0 V
GS
DS
V
V
= 80 V, V = 0 V, T = 125_C
50
Zero Gate Voltage Drain Current
I
mA
DS
GS
J
DSS
= 80 V, V = 0 V, T = 175_C
250
DS
GS
J
b
On-State Drain Current
I
V
DS
= 5 V, V = 10 V
60
A
D(on)
GS
V
= 10 V, I = 40 A
0.013
45
0.016
0.027
0.037
GS
D
b
V
V
= 10 V, I = 40 A, T = 125_C
Drain-Source On-State Resistance
r
W
GS
D
J
DS(on)
= 10 V, I = 40 A, T = 175_C
GS
D
J
b
Forward Transconductance
g
fs
V
= 15 V, I = 40 A
S
DS
D
Dynamica
Input Capacitance
C
C
1960
370
200
42
iss
V
V
= 0 V, V = 25 V, F = 1 MHz
DS
Output Capacitance
pF
GS
oss
Reverse Transfer Capacitance
C
rss
c
Total Gate Charge
Q
60
g
c
Gate-Source Charge
Q
Q
7
= 40 V, V = 10 V, I = 40 A
nC
gs
gd
DS
GS
D
c
Gate-Drain Charge
13
Gate Resistance
R
0.5
2.7
20
80
38
15
W
g
c
Turn-On Delay Time
t
12
52
25
10
d(on)
c
Rise Time
t
r
V
= 40 V, R = 1.0 W
L
GEN g
DD
ns
c
I
D
^ 40 A, V
= 10 V, R = 2.5 W
Turn-Off Delay Time
t
d(off)
c
Fall Time
t
f
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
I
60
1.5
70
A
V
SM
b
Diode Forward Voltage
V
SD
I
F
= 40 A, V = 0 V
1.0
45
GS
Source-Drain Reverse Recovery Time
t
rr
I
F
= 40 A, di/dt = 100 A/ms
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
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2 / 5
SUD40N08-16
N-Channel
80 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
100
100
V
GS
= 10 thru 7 V
80
60
40
20
0
80
60
40
6 V
T
= 125_C
C
20
0
25_C
5 V
3, 4 V
6
−55_C
0
2
4
8
10
0
1
2
3
4
5
6
7
V
DS
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
80
60
40
20
0
0.04
0.03
0.02
0.01
0.00
T
= −55_C
C
25_C
125_C
V
GS
= 10 V
0
20
40
60
80
100
0
20
40
60
80
100
I
D
− Drain Current (A)
I
D
− Drain Current (A)
Capacitance
Gate Charge
3000
2500
2000
1500
1000
500
20
16
12
8
V
D
= 10 V
DS
I
= 40 A
C
iss
C
rss
4
C
oss
0
0
0
20
40
60
80
0
15
30
Q − Total Gate Charge (nC)
g
45
60
75
V
− Drain-to-Source Voltage (V)
DS
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3 / 5
SUD40N08-16
N-Channel
80 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistancevs. Junction Temperature
Source-Drain Diode Forward Voltage
2.4
100
V
D
= 10 V
GS
I
= 40 A
2.0
1.6
1.2
0.8
0.4
0.0
10
T = 150_C
J
1
T = 25_C
J
0.1
0.01
−50 −25
0
25
50
75 100 125 150 175
0
0.3
V − Source-to-Drain Voltage (V)
SD
0.6
0.9
1.2
T
− Junction Temperature (_C)
J
THERMAL RATINGS
Maximum Avalanche Drain Current
vs. Case Temperature
Safe Operating Area
50
40
30
20
10
0
1000
100
10
10 ms
Limited by r
DS(on)
100 ms
1 ms
10 ms
100 ms
1 s, dc
1
T
= 25_C
C
Single Pulse
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
V
DS
− Drain-to-Source Voltage (V)
T
− Case Temperature (_C)
C
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
10
Square Wave Pulse Duration (sec)
1
10
30
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4 / 5
SUD40N08-16
N-Channel
80 V (D-S) 175 °C MOSFET
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相关型号:
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TRANSISTOR 40 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, LEAD FREE, TO-252, 3 PIN, FET General Purpose Power
VISHAY
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