SUD45N05-20L [FREESCALE]
N-Channel 50 V (D-S) 175 °C MOSFET; N沟道50 V (D -S ), 175 ℃的MOSFET型号: | SUD45N05-20L |
厂家: | Freescale |
描述: | N-Channel 50 V (D-S) 175 °C MOSFET |
文件: | 总5页 (文件大小:484K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SUD45N05-20L
N-Channel
50 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)a
"30
0.018 @ V = 10 V
GS
50
0.020 @ V = 4.5 V
GS
"30
D
TO-252
G
Drain Connected to Tab
G
D
S
Top View
Order Number:
SUD45N05-20L
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)
C
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
50
"20
"30
"30
"100
43
DS
GS
V
V
T
= 25_C
C
a
Continuous Drain Current
Pulsed Drain Current
I
D
T
C
= 100_C
I
A
DM
a
Continuous Source Current (Diode Conduction)
I
S
Avalanche Current
I
37
AR
Repetitive Avalanche Energy (Duty Cycle v 1%)
L = 0.1 mH
E
93
mJ
W
AR
T
C
= 25_C
= 25_C
75
Maximum Power Dissipation
P
D
a
T
2.5
A
Operating Junction and Storage Temperature Range
T , T
J
–55 to 175
_C
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
Free Air, FR4 Board Mount
Free Air, Vertical Mount
60
110
2.0
Maximum Junction-to-Ambient
Maximum Junction-to-Case
R
thJA
thJC
C/W
R
Notes
a. Package limited.
b. Surface Mounted on FR4 Board, t v 10 sec.
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SUD45N05-20L
N-Channel
50 V (D-S) 175 °C MOSFET
SPECIFICATIONS (T = _2C5 UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
V
= 0 V, I = 250 mA
D
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
50
GS
(BR)DSS
V
V
V
DS
= V , I = 250 mA
1.0
2.0
GS(th)
GS
D
V
DS
= 0 V, V = "20 V
GS
I
"100
1
nA
GSS
V
= 50 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
V
V
= 50 V, V = 0 V, T = 125_C
50
mA
DSS
DS
GS
J
= 50 V, V = 0 V, T = 175_C
150
DS
GS
J
b
On-State Drain Current
I
V
DS
= 5 V, V = 10 V
43
20
A
D(on)
GS
V
GS
= 10 V, I = 20 A
0.018
0.036
0.040
0.020
D
V
V
= 10 V, I = 20 A, T = 125_C
GS
D
J
b
Drain-Source On-State Resistance
r
W
DS(on)
= 10 V, I = 43 A, T = 125_C
GS
D
J
V
GS
= 4.5 V, I = 43 A
D
b
Forward Transconductance
g
fs
V
DS
= 15 V, I = 43 A
S
D
Dynamica
Input Capacitance
C
1800
370
130
43
7
3600
60
iss
V
= 0 V, V = 25 V, f = 1 MHz
DS
GS
Output Capacitance
C
oss
pF
nC
Reverse Transfer Capacitance
C
rss
c
Total Gate Charge
Q
g
c
Gate-Source Charge
Q
Q
V
= 25 V, V = 10 V, I = 43 A
DS GS D
gs
gd
c
Gate-Drain Charge
10
10
10
32
7
c
Turn-On Delay Time
t
20
20
60
15
d(on)
c
Rise Time
t
r
V
= 25 V, R = 0.6 W
L
= 10 V, R = 2.5 W
GEN G
DD
ns
I
D
^ 43 A, V
c
Turn-Off Delay Time
t
d(off)
c
Fall Time
t
f
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
I
43
1.5
100
A
V
SM
b
Diode Forward Voltage
V
SD
I = 43 A, V = 0 V
F GS
Source-Drain Reverse Recovery Time
t
rr
I
F
= 43 A, di/dt = 100 A/ms
49
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
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SUD45N05-20L
N-Channel
50 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Output Characteristics
Transfer Characteristics
100
80
60
40
20
0
60
50
40
30
20
10
0
V
GS
= 10, 9, 8, 7, 6 V
5 V
4 V
3 V
T
C
= –125_C
25_C
–55_C
0
2
4
6
8
10
0
1
2
3
4
5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
80
60
40
20
0
0.04
0.03
0.02
0.01
0
T
C
= –55_C
25_C
125_C
V
GS
= 4.5 V
V
GS
= 10 V
0
10
20
D
30
40
50
60
0
20
40
60
I
– Drain Current (A)
I
– Drain Current (A)
D
Capacitance
Gate Charge
3000
2500
2000
1500
1000
500
10
8
V
= 25 V
= 43 A
DS
I
D
C
iss
6
4
C
oss
2
C
rss
0
0
0
10
20
30
40
50
0
10
20
Q – Total Gate Charge (nC)
g
30
40
50
V
DS
– Drain-to-Source Voltage (V)
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SUD45N05-20L
N-Channel
50 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0
100
10
1
V
= 10 V
= 20 A
GS
I
D
T = 150_C
J
T = 25_C
J
–50 –25
0
25
50
75 100 125 150 175
0
0.3
V
0.6
0.9
1.2
1.5
T
J
– Junction Temperature (_C)
– Source-to-Drain Voltage (V)
SD
THERMAL RATINGS
Maximum Drain Current vs. CaseTemperature
Safe Operating Area
200
100
50
40
30
20
10
0
Limited
by r
DS(on)
100 ms
10
1
1 ms
10 ms
100 ms
dc, 1 s
T
= 25_C
C
Single Pulse
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
V
DS
– Drain-to-Source Voltage (V)
T
C
– Case Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
10
1
10
30
Square Wave Pulse Duration (sec)
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SUD45N05-20L
N-Channel
50 V (D-S) 175 °C MOSFET
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