TK7P60W [FREESCALE]
MOSFETs Silicon N-Channel MOS (DTMOSî¯); MOSFET的硅N沟道MOS （ DTMOSî ？ ¯ ）
| 型号： | TK7P60W |
| 厂家： | 
Freescale |
| 描述： | MOSFETs Silicon N-Channel MOS (DTMOSî¯) |
| 文件： | 总9页 (文件大小：343K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TK7P60W
MOSFETs Silicon N-Channel MOS (DTMOS)
1. Applications
•
Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 0.5 Ω (typ.)
by used to Super Junction Structure : DTMOS
(2) Easy to control Gate switching
(3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.35 mA)
3. Packaging and Internal Circuit
1: Gate
2: Drain (Heatsink)
3: Source
DPAK
4. Absolute Maximum Ratings (Note) (T = 25 unless otherwise specified)
a
Characteristics
Symbol
Rating
Unit
V
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
VDSS
VGSS
ID
600
±30
7.0
(Note 1)
(Note 1)
A
IDP
28
(Tc = 25)
PD
60
W
mJ
A
Single-pulse avalanche energy
Avalanche current
(Note 2)
EAS
IAR
92
1.8
Reverse drain current (DC)
Reverse drain current (pulsed)
Channel temperature
(Note 1)
(Note 1)
IDR
7.0
IDRP
Tch
28
150
-55 to 150
Storage temperature
Tstg
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
1/9
www.freescale.net.cn
5. Thermal Characteristics
Characteristics
Symbol
Rth(ch-c)
Max
2.09
Unit
Channel-to-case thermal resistance
/W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25 (initial), L = 49.9 mH, RG = 25 Ω, IAR = 1.8 A
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2/9
www.freescale.net.cn
6. Electrical Characteristics
6.1. Static Characteristics (T = 25 unless otherwise specified)
a
Characteristics
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
IGSS
IDSS
VGS = ±30 V, VDS = 0 V
±1
10
µA
Drain cut-off current
VDS = 600 V, VGS = 0 V
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS ID = 10 mA, VGS = 0 V
Vth VDS = 10 V, ID = 0.35 mA
RDS(ON) VGS = 10 V, ID = 3.5 A
600
2.7
V
3.7
0.6
Drain-source on-resistance
0.5
Ω
6.2. Dynamic Characteristics (T = 25 unless otherwise specified)
a
Characteristics
Input capacitance
Symbol
Test Condition
Min
Typ.
Max
Unit
pF
Ciss
Crss
Coss
Co(er)
rg
VDS = 300 V, VGS = 0 V, f = 1 MHz
25
490
1.7
13
Reverse transfer capacitance
Output capacitance
Effective output capacitance
Gate resistance
VDS = 0 to 400 V, VGS = 0 V
VDS = OPEN, f = 1 MHz
See Figure 6.2.1
21
7.0
18
Ω
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
MOSFET dv/dt ruggedness
tr
ns
ton
40
tf
7.0
55
toff
dv/dt
VDD = 0 to 400 V, ID = 3.5 A
V/ns
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (T = 25 unless otherwise specified)
a
Characteristics
Symbol
Qg
Test Condition
Min
Typ.
15
Max
Unit
nC
Total gate charge (gate-source plus
gate-drain)
VDD ≈ 400 V, VGS = 10 V, ID = 7.0 A
Gate-source charge 1
Gate-drain charge
Qgs1
Qgd
3.2
8.0
6.4. Source-Drain Characteristics (T = 25 unless otherwise specified)
a
Characteristics
Diode forward voltage
Symbol
Test Condition
IDR = 7.0 A, VGS = 0 V
Min
Typ.
Max
Unit
VDSF
trr
15
230
1.7
16
-1.7
V
ns
Reverse recovery time
IDR = 3.5 A, VGS = 0 V
-dIDR/dt = 100 A/µs
Reverse recovery charge
Peak reverse recovery current
Diode dv/dt ruggedness
Qrr
µC
A
Irr
dv/dt
IDR = 3.5 A, VGS = 0 V, VDD = 400 V
V/ns
3/9
www.freescale.net.cn
7. Marking
Fig. 7.1 Marking
4/9
www.freescale.net.cn
8. Characteristics Curves (Note)
Fig. 8.1 I - V
Fig. 8.2 I - V
D DS
D
DS
Fig. 8.3 I - V
Fig. 8.4
V - V
DS GS
D
GS
Fig. 8.5
V
DSS
- T
Fig. 8.6
R
- I
a
DS(ON) D
5/9
www.freescale.net.cn
Fig. 8.7
R
DS(ON)
- T
Fig. 8.8
I - V
DR DS
a
Fig. 8.9 C - V
Fig. 8.10
E - V
OSS DS
DS
Fig. 8.11 V - T
Fig. 8.12 Dynamic Input/Output Characteristics
th
a
6/9
www.freescale.net.cn
Fig. 8.13 r - t
th
w
(Guaranteed Maximum)
Fig. 8.14
E
AS
- T
Fig. 8.15 P - T
D c
ch
(Guaranteed Maximum)
(Guaranteed Maximum)
Fig. 8.16 Test Circuit/Waveform
7/9
www.freescale.net.cn
Fig. 8.17 Safe Operating Area
(Guaranteed Maximum)
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
8/9
www.freescale.net.cn
Package Dimensions
Unit: mm
Weight: 0.36 g (typ.)
9/9
www.freescale.net.cn
©2020 ICPDF网 联系我们和版权申明