SSD355-LFR [FRONTIER]
SUPER SWITCHING CHIP DIODE; SUPER开关芯片二极管
| 型号： | SSD355-LFR |
| 厂家： | 
Frontier Electronics |
| 描述： | SUPER SWITCHING CHIP DIODE |
| 文件： | 总2页 (文件大小：121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Frontier Electronics Corp.
667 E. COCHRAN STREET, SIMI VALLEY, CA 93065
TEL: (805) 522-9998 FAX: (805) 522-9989
E-mail: frontiersales@frontierusa.com
Web: http://www.frontierusa.com
SUPER SWITCHING CHIP DIODE
SSD355-LFR
2.0±0.2
FEATURES
z SUPER SWITCHING
z CHIP DIODE SIZE
z LOW STORED CHARGE
z ROHS
CATHODE
MARK
R:0.3
1.2±0.2
MECHANICAL DATA
z CASE: SOD-323 MINI MELF, DIMENSIONS
IN MILLIMETERS
z TERMINALS: SOLDERABLE PER MIL-STD 750
METHOD 2026
z POLARITY: CATHODE INDICATED
BY COLOR BAND
Recommended Land
Pattern Dimensions
CATHODE ELECTRODE ANODE ELECTRODE
1.2±0.1
2.1
0.9±0.2
1.25
0.9
RATINGS
SYMBOL
VR
SSD355-LFR
UNITS
100
V
CONTINUOUS REVERSE VOLTAGE
RECTIFIED CURRENT（AVERAGE）
IO
100
mA
HALF WAVE RECTIFICATION WITH RESIST LOAD
AT Tamb＝25℃ AND f ≧ 50HZ （NOTE 1）
SURGE FORWARD CURRENT AT T＜1 s AND TJ＝25℃
POWER DISSIPATION AT Tamb=25℃
JUNCTION TEMPERATURE
IFSM
PTOT
TJ
500
350
mA
mW
℃
175
STORAGE TEMPERATURE RANGE
TS
- 55 TO + 175
℃
CHARACTERISTICS TJ=25℃
MIN
-
TYP
-
MAX
1
UNITS
V
SYMBOL
VF
FORWARD VOLTAGE AT IF=100mA
LEAKAGE CURRENT
AT VR=25V
IR
IR
-
-
-
-
-
30
0.1
-
nA
μA
V
AT VR=80V
REVERSE BREAKDOWN VOLTAGE
TESTED WITH 100μA PULSES
CAPACITANCE AT VF=VR=0 , f = 1.0 MHz
REVERSE RECOVERY TIME
FROM IF=10mA TO IR=1mA VR=6V RL=100Ω
THERMAL RESISTANCE
VR
100
CD
-
-
-
-
1.5
4
PF
nS
TRR
RTHA
-
-
0.35
K / mW
JUNCTION TO AMBIENT AIR（NOTE 1）
NOTE ： 1. LEADS KEPT AT AMBIENT TEMP.
SSD355-LFR
Page: 1
RATINGS AND CHARACTERISTIC CURVE SSD355-LFR
Fig. 1-REVERSE CHARACTERISTICS
Fig. 2-FORWARD CHARACTERISTICS
120
100
80
60
40
20
0
1000
100
10
Scattering Limit
1.0
Scattering Limit
0.1
10
20
30
50
70
100
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Typical Leakage Current Versus Reverse Voltage , VR (V)
Typical Forward Current Versus Forward Voltage , VF (V)
Fig. 4-DERATING CURVE
ODES CAPACITANCE
600
500
400
300
200
100
0
1.2
1.0
f=1MHZ
Tj=25 oC
0.8
0.6
0.4
0.2
0
0
100
200
0
2
4
6
8
10
Power Dissipation Versus Ambient Temperature
Ta (oC)
Typical Diodes Capacitance Versus Reverse Voltage , VR(V)
SSD355-LFR
Page: 2
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