FDS4448HSDW [FS]
Switching Diode;
| 型号： | FDS4448HSDW |
| 厂家： | 
First Silicon Co., Ltd |
| 描述： | Switching Diode |
| 文件： | 总4页 (文件大小：287K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
FDS4448HCDW
TECHNICAL DATA
FDS4448HAQW/HADW/HCDW/HSDW/HTW
Switching Diode
SOT-363
FEATURES
Fast Switching Speed
Ultra-Small Surface Mount Package
For General Purpose Switching Applications
High Conductance Power Dissipation
FDS4448HAQW
MARKING:KA5
FDS4448HADW
MARKING:KA6
FDS4448HCDW
MARKING:KA7
FDS4448HSDW
FDS4448HTW
MARKING:KAB
MARKING:KAA
-
-
KAB
-
- - - - - -
-
-
- -
- -
+
+ +
+ +
+
+
+
KAA
KA7
KA6
KA5
KAA
KA7
KA6
KAB
KA5
-
-
-
- - - -
+
+ + + + + +
+ +
+ +
+
+
+
Soliddot = Pin1 indicate.
Soliddot = Green molding compound device, if none,the normal device.
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter
Symbol
VRM
Limit
Unit
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
100
V
VRRM
VRWM
VR
80
V
RMS Reverse Voltage
VR(RMS)
IFM
57
V
Forward Continuous Current
Average Rectified Output Current
500
250
mA
mA
IO
Non-Repetitive Peak Forward Surge Current @t=8.3ms
IFSM
A
2.0
Power Dissipation
mW
Pd
200
625
RθJA
Thermal Resistance from Junction to Ambient
Storage Temperature
℃ /W
℃
TSTG
-55 ~+150
2016. 07. 13
Revision No : 0
1/4
FDS4448HCDW
ELECTRICAL CHARACTERISTICS
Electrical Ratings @Ta=25℃
Parameter
Symbol
V (BR)
VF1
Min
80
Typ
Max
Unit
V
Conditions
IR=100μA
IF=5mA
Reverse Breakdown Voltage
0.62
0.72
0.855
1.0
V
VF2
V
IF=10mA
Forward Voltage
VF3
V
IF=100mA
IF=150mA
VR=70V
VF4
1.25
100
25
V
IR1
nA
Reverse Current
IR2
nA
VR=20V
Capacitance Between Terminals
Reverse Recovery Time
CT
VR=0V,f=1MHz
pF
3.5
IF=IR=10mA
trr
4
ns
Irr=0.1XIR,RL=100Ω
2016. 07. 13
Revision No : 0
2/4
FDS4448HCDW
Typical Characteristics
Forward Characteristics
Reverse Characteristics
10000
1000
100
10
500
Ta=100℃
100
10
Ta=25℃
1
0.0
1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
FORWARD VOLTAGE
V
(V)
REVERSE VOLTAGE
VR (V)
F
Power Derating Curve
Capacitance Characteristics
1.1
1.0
0.9
0.8
0.7
0.6
250
200
150
100
50
Ta=25℃
f=1MHz
0
0
4
8
12
16
20
0
25
50
75
100
125
150
REVERSE VOLTAGE
VR (V)
AMBIENT TEMPERATURE Ta (℃ )
2016. 07. 13
Revision No : 0
3/4
FDS4448HCDW
SOT- 363 Package Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.100
0.100
1.000
0.350
0.150
2.200
1.350
2.400
Min
Max
A
A1
A2
b
c
D
E
E1
e
e1
L
0.900
0.000
0.900
0.150
0.100
2.000
1.150
2.150
0.035
0.000
0.035
0.006
0.004
0.079
0.045
0.085
0.043
0.004
0.039
0 014
0 006
0.087
0.053
0 094
0.650 TYP
0.525 REF
0.026 TYP
0.021 REF
1.200
1.400
0.047
0.055
L1
θ
0.260
0°
0.460
8°
0.010
0°
0 018
8°
SOT- 363 Suggested Pad Layout
2016. 07. 13
Revision No : 0
4/4
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