FTC5658R [FS]
NPN Silicon General Purpose Amplifier Transistor;
| 型号： | FTC5658R |
| 厂家： | 
First Silicon Co., Ltd |
| 描述： | NPN Silicon General Purpose Amplifier Transistor |
| 文件： | 总5页 (文件大小：498K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
FTC5658
TECHNICAL DATA
NPN Silicon General
Purpose Amplifier Transistor
3
This NPN transistor is designed for general purpose amplifier
applications. This device is housed in the SOT- 723 package which is
designed for low power surface mount applications, where board
space is at a premium.
2
1
SOT–723
Features
• Reduces Board Space
• High hFE, 210−460 (typical)
COLLECTOR
3
• Low V
< 0.5 V
CE(sat)
ESD Performance: Human Body Model;
•
> 2000 V,
Machine Model; > 200 V
1
2
BASE
EMITTER
MARKING
DIAGRAM
MAXIMUM RATINGS (TA = 25℃)
3
XX
SOT−723
Rating
Symbol
Value
50
Unit
Vdc
2
Collector- Base Voltage
Collector- Emitter Voltage
Emitter- Base Voltage
V
(BR)CBO
(BR)CEO
(BR)EBO
1
V
V
50
Vdc
XX = Specific Device Code
BQ = FTC5658Q
BR = FTC5658R
5.0
100
Vdc
Collector Current−Continuous
I
mAdc
C
THERMAL CHARACTERISTICS
ORDERING INFORMATION
Rating
Symbol
Max
260
Unit
mW
°C
Power Dissipation (Note 1)
Junction Temperature
Storage Temperature Range
P
D
Device
Package
Shipping
8000/Tape & Reel
T
J
150
SOT−723
FTC5658
T
stg
−55 ~ +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR- 4 glasspeoxy printed circuit board using the
minimum recommended footprint.
2018. 08. 29
Revision No : 1
1/5
FTC5658
ELECTRICAL CHARACTERISTICS (TA=25℃)
Characteristic
Symbol
Min
50
50
5.0
−
Typ
−
Max
−
Unit
Vdc
Vdc
Vdc
A
Collector- Base Breakdown Voltage (Ic= 50uAdc, IE= 0)
Collector- Emitter Breakdown Voltage (Ic=1.0mAdc, IE= 0)
Emitter- Base Breakdown Voltage (Ic= 50uAdc, IE= 0)
Collector- Base Cutoff Current (Vcb= 30 Vdc, IE= 0)
Emitter- Base Cutoff Current (VEB = 4.0 Vdc, IE = 0)
V
(BR)CBO
(BR)CEO
(BR)EBO
V
V
−
−
−
−
I
−
0.5
0.5
CBO
I
−
−
A
EBO
Collector- Emitter Saturation Voltage (Note 2)
(IC = 50 mAdc, IB = 5.0 mAdc)
V
Vdc
CE(sat)
−
−
0.4
DC Current Gain (Note 2)
h
FE
−
(VCE = 6.0 Vdc, IC = 1.0 mAdc)
(VCE = 6.0 Vdc, IC = 1.0 mAdc)
FTC5658Q
FTC5658R
120
180
−
−
270
390
Transition Frequency (VCE=12Vdc, IC=2.0mAdc, f=30MHz)
Output Capacitance (VCB =12 Vdc, IC =0 Adc, f =1.0 MHz)
f
−
−
180
2.0
−
−
MHz
pF
T
C
OB
2. Pulse Test: Pulse Width≤300us, D.C. ≤2%.
2018. 08. 29
Revision No : 1
2/5
FTC5658
TYPICAL ELECTRICAL CHARACTERISTICS
1
60
50
40
30
I /I = 10
C
B
160
140
120
100
A
A
A
T
A
= 25℃
A
0.1
T
A
= 25°C
80 A
60 A
20
10
0
T
= 150°C
A
40 A
T
A
= −55°C
I
B
= 20 A
0.01
0
2
4
6
8
0.01
0.1
1
10
100
V
, COLLECTOR VOLTAGE (V)
I , COLLECTOR CURRENT (mA)
C
CE
Figure 1. IC −VCE
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
1.2
1.1
1
1000
100
10
V
CE
= 6 V
I /I = 10
C
B
T
= 150°C
= 25°C
A
T
A
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
T
A
= −55°C
T
A
= −55°C
T
A
= 25°C
T
A
= 150°C
0.01
0.1
1
10
100
0.1
1
10
100
1000
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 3. Base Emitter Saturation Voltage vs.
Figure 4. DC Current Gain vs. Collector
Current
Collector Current
30 mA
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
V = 2 V
CE
T
A
= 25°C
50 mA
30 mA
T
A
= −55°C
T
= 25°C
= 150°C
1
A
T
A
I
= 100 mA
C
10 mA
0.01
0.1
1
10
100
0.1
10
100
1000
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
Figure 5. Saturation Region
Figure 6. Base−Emitter Turn−ON Voltage vs.
Collector Current
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Revision No : 1
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FTC5658
100
10
1
1000
V
=
−2V
= 25°C
CE
T
A
C
ibo
100
C
obo
10
0.1
0.1
1
10
100
1
10
100
1000
V , REVERSE VOLTAGE (V)
R
I , COLLECTOR CURRENT (mA)
C
Figure 7. Capacitance
Figure 8. Current Gain Bandwidth Product vs.
Collector Current
1000
100 ms
10 ms
100
10 s
Thermal
Limit
10
1
1
10
100
V
CE
, COLLECTOR REVERSE VOLTAGE (V)
Figure 9. Safe Operating Area
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Revision No : 1
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FTC5658
SOT−723
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
−X−
D
A
b1
−Y−
3
E
HE
MILLIMETERS
INCHES
NOM MAX
0.018 0.020 0.022
L
1
2
DIM MIN
NOM
0.50
0.21
0.31
0.12
MAX
0.55
0.27 0.0059 0.0083 0.0106
0.37 0.010 0.012 0.015
0.17 0.0028 0.0047 0.0067
MIN
A
b
b1
C
D
E
e
H E
L
0.45
0.15
0.25
0.07
1.15
0.75
b 2X
C
e
0.08 (0.0032X) Y
1.20
0.80
1.25
0.85
0.045 0.047 0.049
0.03 0.032 0.034
0.016 BSC
STYLE 1:
PIN 1. BASE
0.40 BSC
1.20
0.20
1.15
0.15
1.25
0.045 0.047 0.049
2. EMITTER
3. COLLECTOR
0.25 0.0059 0.0079 0.0098
SOLDERING FOOTPRINT*
0.40
0.0157
0.40
0.0157
1.0
0.039
0.40
0.0157
0.40
0.40
0.0157
0.0157
mm
inches
SCALE 20:1
2018. 08. 29
Revision No : 1
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