FTK12N65F [FS]
12 Amps, 650 Volts N-CHANNEL MOSFET;
| 型号： | FTK12N65F |
| 厂家： | 
First Silicon Co., Ltd |
| 描述： | 12 Amps, 650 Volts N-CHANNEL MOSFET |
| 文件： | 总7页 (文件大小：427K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
FTK12N65P/F/DD
TECHNICAL DATA
12 Amps, 650 Volts N-CHANNEL MOSFET
DESCRIPTION
These N-Channel enhancement mode power field effect
Transistors are produced using planar stripe, DMOS
P :
technology.
1
This advanced technology has been especially tailored
to minimize on - state resistance , provide superior
switching performance,and Withstand high energy pulse
in the avalanche and commutaion mode .These devices
are well suited for high efficiency switch mode power
TO-220
supply electronic lamp ballasts
based on half bridge topology.
F :
1
TO-220F
FEATURES
* RDS(ON) = 0.8Ω@VGS = 10V
* Fast switching capability
* Avalanche energy tested
DD :
1
* Improved dv/dt capability, high ruggedness
TO-263
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Pin Assignment
Order Number
Package
Packing
1
2
3
FTK12N65P
FTK12N65F
FTK12N65DD
TO-220
TO-220F
TO-263
G
D
S
Tube
Tube
G
G
D
D
S
S
Reel & Taping
Note: Pin Assignment:
G: Gate
D: Drain
S: Source
2012. 07. 03
Revision No : 0
1/7
FTK12N65P/F/DD
(
TC = 25˚C, unless otherwise specified)
ABSOLUTE MAXIMUM RATINGS
PARAMET
SYMBOL
VDSS
RATINGS
UNIT
V
Drain-Source Voltage
650
±30
12
VGSS
Gate-Source Voltage
V
IAR
Avalanche Current (Note 1)
A
TC = 25°C
12
A
Continuous Drain Current
Pulsed Drain Current (Note 1)
Avalanche Energy
ID
TC = 100°C
6.5
48
IDM
EAS
A
Single Pulse(Note 2)
790
24
mJ
mJ
Repetitive Limited by TJ(MAX)
EAR
4.5
Peak Diode Recovery dv/dt (Note 3)
dv/dt
V/ns
W
TC = 25°C
225 / 51
1.25 / 0.38
+150
Power Dissipation (TO-220,TO-263/ TO-220F)
PD
Derate above 25°C
W / ˚C
TJ
Junction Temperature
˚C
˚C
TSTG
-55 ~ +150
Operating and Storage Temperature
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction-to-Ambient
Junction-to-Case
SYMBOL
MIN
TYP
MAX
62.5
UNIT
θJA
TO-220, TO-263
TO-220F
θJc
θJc
˚C / W
0.56
2.43
(TC = 25˚C , unless Otherwise specified.)
ELECTRICAL CHARACTERISTICS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
BVDSS
IDSS
VGS = 0V, ID = 250µA
650
V
10
µA
Drain-Source Leakage Current
Gate-Body Leakage Current
VDS = 650V, VGS = 0V
IGSSF
IGSSR
VGS = 30V, VDS = 0V
Forward
Reverse
100
nA
nA
VGS = -30V, VDS = 0V
-100
ID = 250µA, Referenced to
25°C
ΔBVDSS / ΔTJ
Breakdown Voltage Temperature Coefficient
0.7
8.7
V / ˚C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
gFS
VDS = VGS, ID = 250µA
VGS = 10V, ID = 6.0A
2.0
4.0
0.8
V
Ω
S
Static Drain-Source On-Resistance
VDS = 40V, ID = 6.0A (Note 4)
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
COSS
CRSS
1480
200
25
pF
pF
pF
VDS = 25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
30
ns
12A
VDD =350V , ID =
tR
tD(OFF)
tF
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
115
95
ns
ns
, R = 25Ω
G
(Note 4,5)
85
ns
QG
42
nC
nC
VDS = 520V,ID =
12A
QGS
8.6
VGS
=
10V
QGD
Gate-Drain Charge
(Note 4,5)
21
nC
2012. 07. 03
Revision No : 0
2/7
FTK12N65P/F/DD
(TJ
=
˚C ,
Otherwise specified.)
unless
25
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
IS
VGS = 0 V, IS = 12A
Drain-Source Diode Forward Voltage
1.4
12
V
A
Maximum Continuous Drain-Source Diode
Forward Current
Maximum Pulsed Drain-Source Diode Forward
Current
ISM
48
A
tRR
VGS = 0 V, IS = 12A,
Reverse Recovery Time
380
3.5
ns
QRR
dIF/dt =100 A/µs (Note 4)
Reverse Recovery Charge
µC
Note:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 10.0mH, I AS = 12A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD
μs, VDD ≤ BVDSS, Starting TJ = 25°C
≤ 12A, di/dt ≤ 200A/
4. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
2012. 07. 03
Revision No : 0
3/7
FTK12N65P/F/DD
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by R
G
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
Period
P. W.
VGS
(Driver)
D=
P.W.
Period
10V
=
VGS
I
FM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
2012. 07. 03
Revision No : 0
4/6
FTK12N65P/F/DD
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS
VDS
90%
VDD
VGS
RG
10%
VGS
D.U.T.
10V
tD(ON)
tD(OFF)
Pulse Width ≤ 1μs
Duty Factor ≤ 0 1%
tF
tR
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Same Type
as D.U.T.
50kΩ
QG
12V
10V
0 3μF
0.2μF
VDS
QGS
QGD
VGS
DUT
VG
3mA
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
RD
VDD
10V
D.U.T.
tp
IAS
Time
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
2012. 07. 03
Revision No : 0
5/7
FTK10N65P / F / DD
TYPICAL CHARACTERISTICS
Transfer Characteristics
On-Resign Characteristics
Top:
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
101
101
150°C
25°C
Bottom: 5.5V
-55°C
100
100
Notes:
Notes:
1.VDS=50V
250µs Pulse Test
TC=25°C
2.250µs Pulse Test
10-1
10-1
100
101
2
4
6
8
10
Drain-Source Voltage, VGS (V)
Gate-Source Voltage, VGS (V)
2012. 07. 03
Revision No : 0
6/7
FTK12N65P/F/DD
2012.07. 03
Revision No : 0
7/7
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