MB84VZ064A [FUJITSU]
Memory IC;
| 型号： | MB84VZ064A |
| 厂家： | 
FUJITSU |
| 描述： | Memory IC |
| 文件： | 总4页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MB84VZ064A
New products
Stacked MCP Mounted with Two
64M-bitNOR-type Flash Memories,
TM
a 32M-bit Mobile FCRAM , and
an 8M-bit SRAM
MB84VZ064A
A quadruple-stacked MCP with the world's largest memory density,
mounted with two 64M-bit NOR-type flash memories,
a 32M-bit mobile FCRAMTM, and an 8M-bit SRAM.
A package of the conventional size, packed with a flash memory
with twice the conventional density.
Product Description
with two 64M-bit NOR-type flash memories, a 32M-bit
mobile FCRAM, and an 8M-bit SRAM.
Today's cellular phones and other information devices are
designed to provide an ever growing range of services and
functions. Besides straight voice communication, consumers
can use them to send e-mail, download images, and browse
web pages. Recently, a game which can be downloded by
cellular phone is equipped with Java.
In today's MCPs for cellular phones, a NOR-type flash
memory is mounted for program storage and an SRAM or
Photo 1 External View
FUJITSU has already commercialized a series of stacked
MCPs that combine NOR-type flash memory with SRAM or
mobile FCRAM*1*2, and this hardware is widely used in
mobile information devices. But with the commercial launch
of the next generation mobile communication system IMT-
2000*3, the wider scope of services now available to consumers
is driving up demand for further enhancements in the
densities and speed of cellular phones, as well for lower power
consumption and cheaper memory. To respond to these
market demands, FUJITSU has developed the MB84VZ064A,
a quadruple-stacked multi-chip package (MCP) mounted
2002 No.2
FIND Vol.20
61
MB84VZ064A
New products
mobile FCRAM is mounted for temporary storage while
data is being rewritten. In addition to these components,
the next generation of cellular phones will require an area
for large-density data processing for sounds and video
images. The MB84VZ064A provides the memory required
for a cellular phone in a single package by fitting the package
with two 64M-bit flash memories for program storage, a
32M-bit mobile FCRAM for application work memory, and
an 8M-bit SRAM for base band work memory. The
MB84VZ064A offers an optimal solution for cellular phone
memory that enables the design of lighter-weight, further-
miniaturized, faster circuitry for incorporation in our
customer systems.
But with today's flip-chip technology this is no longer the
case. In our newer devices, we can mount two or more
conventionally used chips into a package of the conventional
size, while increasing memory density at the same time.
Figure 1 Section Diagram of 4-Chip Stacked MCP
Adhesive
Chip 4 Chip 3
Chip 2
Au wire
Mold resin
Chip 1
Product Features
Under fill
■ Mounting Two Chips with Identical Densities
In conventional stacked MCP's, the mounting of two chips
Au bump
Substrate
Solder ball
with identical densities was an insurmountable challenge.
Table 1 Main Characteristics
Item
MB84VZ064A
64M-bit NOR-type flash memory×2
32M-bit mobile FCRAM (second-generation product)
8M-bit SRAM
Mounted device
I/O configuration
Power supply voltage
Operation temperature
Read cycle time
×16
2.7 to 3.1V
－30 to ＋85℃
Flash：70ns/FCRAM：70ns/SRAM：70ns
Write cycle time
Flash：70ns/FCRAM：70ns/SRAM：70ns
/CE access time
Flash：70ns/FCRAM：70ns/SRAM：70ns
18mA（Max.）
53mA（Max.）
35mA（Max.）
5μA（Max.）
During operation
While writing
Flash power consumption
While erasing
During standby
During operation
30mA（Max.）
100μA（Max.）
10μA（Max.）
50mA（Max.）
15μA（Max.）
1.0s/secto（r Max.）
12μs
FCRAM power consumption
SRAM power consumption
During standby
During power down
During operation
During standby
Erase time (typical)
Write time (typical)
Package size
Word
10mm×9mm×1.4（t）mm
96
Signal
Ball quantity
Circumference
7
62
FIND Vol.20
No.2 2002
MB84VZ064A
New products
■ Combination Most Suitable for Memory Density Increase
Conventional MCPs combine two packages-one mounted
thickness of package realizes 1.4mm, which is almost the
same package height as TSOP. Restrictions of the mounting
height of substrate are reduced, and a more flexible design is
attained.
＋
with flash memory mobile FCRAM, and the other mounted
＋
with flash memory SRAM. The MB84VZ064A uses a
＋
more complicated combination of flash memory flash
＋
＋
memory mobile FCRAM SRAM. By increasing the flash
memory density for program storage, we can combine
memories suitable for memory density increased by multi-
functionality.
■ A New Type of Memory Element that Provides
Faster Speed
Access Time: 70ns (Flash, mobile FCRAM)
●
●
Erase Time: 0.2s / sector (Typical), 1s / sector (Max.)
■ 4-Chip Multi-Layered Mounting Height 1.4mm(Max.)
Stacked MCPs tend to increase in package height as
they stack more chips. The same cannot be said of the
MB84VZ064A. With the use of a thin wafer back-grinding
technology, the wafer height is reduced by 30%. The
■ Small Package
Package: FBGA 103 ball (Signal ball, 96; reinforcement
*4
●
－
ball, 7)
●
Size: 10.0mm×9.0mm×1.4 (t)mm
Compared to the area of the conventional MCP (64M-bit
Figure 2 Pin Assignment
Figure 3 Block Diagram
VSS
VCCf_1
（Top View）
Sealed surface
A21 to A0
RY/BY_1
64M-bit
flash
memory 1
A12
K12
RESET_1
CEf_1
N.C.
N.C.
A11 B11 C11 D11 E11 F11 G11 H11 J11 K11
N.C.
N.C.
N.C.
N.C.
N.C.
N.C.
N.C.
N.C.
N.C.
N.C.
VSS
VCCf_2
A21 to A0
A10 B10 C10 D10 E10 F10 G10 H10 J10 K10
RY/BY_2
N.C.
A9
N.C.
A8
N.C.
A7
N.C.
A6
N.C.
B9
A11
B8
A8
A15
C9
A12
C8
A19
C7
CE2r
C6
A21
D9
A13
D8
A9
N.C.
E9
A14
E8
A10
E7
N.C.
E6
A16 VCCf_1 VSS
N.C.
N.C.
K9
N.C.
K8
N.C.
K7
N.C.
K6
F9
PE
G9
DQ15
G8
H9
DQ7
H8
J9
64M-bit
flash
memory 2
DQ14
J8
WP/ACC
RESET_2
CEf_2
F8
DQ6
DQ13 DQ12
DQ5
B7
WE
B6
D7
A20
D6
F7
G7
DQ4
G6
H7
VCCr
H6
J7
DQ15 to DQ0
CE2s
F6
N.C.
J6
VSS
VCCr
A20 to A0
CEf_2 WP/ACC RESET_1RY/BY_1 CE1s VCCs
DQ3 VCCf_1 DQ11 VCCf_2
A5
B5
C5
UB
D5
A18
D4
A5
E5
A17
E4
A4
F5
DQ1
F4
VSS
F3
A0
G5
DQ9
G4
OE
H5
DQ10
H4
J5
DQ2
J4
K5
VSS
K4
LB
UB
WE
OE
RY/BY_2 LB
32 M-bit
FCRAM
A4
VSS
A3
B4
A7
C4
A6
DQ0
DQ8 RESET_2
CE1r
CE2r
PE
B3
N.C.
B2
N.C.
C3
A3
D3
A2
E3
A1
G3
H3
J3
N.C.
J2
K3
N.C.
K2
N.C.
K1
N.C.
N.C.
CEf_1 CE1r
C2
N.C.
D2
N.C.
E2
N.C.
F2
N.C.
G2
H2
VCCs VSS
A18 to A0
N.C.
N.C.
N.C.
A1
N.C.
CE1s
CE2s
8 M-bit
SRAM
（BGA-103P-M01）
2002 No.2
FIND Vol.20
63
MB84VZ064A
New products
＋
NOR-type flash memory 32M-bit mobile FCRAM and
to develop and provide flash memory application products
＋
64M-bit NOR-type flash memory 8M-bit SRAM, area:
that will meet the market needs.
✱
193.32mm2), the new device is miniaturization to 90 mm2
(reduction of approximately 53%).
NOTES
Fig.1 shows the section diagram of 4-chip stacked MCP,
Table 1 shows its main characteristics, Fig.2 shows its pin
assignment, Fig.3 shows its block diagram, and Fig.4 shows
the external dimension diagram of the package.
1: FCRAM (Fast Cycle Random Access Memory): A high-speed,
＿ ＿ ＿ ＿ ＿
*
*
*
*
*
low-power-consumption RAM core originally developed by
FUJITSU.
2: Mobile FCRAM: A low power pseudo-SRAM for mobile
phones and terminal applications. It consists of an FCRAM
core and an asynchronous SRAM interface.
Future Development
3: IMT-2000 ( International Mobile Telecommunications 2000): A
＿
＿
＿
standard for mobile communication systems established by
the International Telecommunication Union.
This article has introduced the new MCP, a product designed
with a large-density memory to keep up with the growing
demand for mobile devices with higher functions.
By MB84VZ064A, MCP corresponding to each function
of a cellular phone can be chosen. FUJITSU will continue
4: FBGA ( Fine-pitch Ball Grid Array): A type of surface-
＿
＿
＿
＿
mountable packaging.
FCRAM is a trademark of FUJITSU LIMITED.
Figure 4 External Dimension Diagram of the Package
＋0.10
103－φ0.40－0.05
φ0.08 M S A B
＋0.15
B
1.25－0.10
（Attachment height）
0.40REF
0.80REF
9.00±0.10
0.20 S B
12
11
10
9
8
7
0.80REF
A
10.00±0.10
6
5
4
3
0.40REF
0.10 S
2
1
0.10±0.05
（STAND OFF）
0.20 S A
K J H G F E D C B A
INDEX-MARK AREA
S
0.10 S
64
FIND Vol.20
No.2 2002
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