首页 |元器件品牌

6MBI15S-120L [FUJI]

IGBT MODULE ( S-Series ); IGBT模块（ S系列）
6MBI15S-120L
型号： 6MBI15S-120L
厂家： FUJI ELECTRIC    FUJI ELECTRIC
描述：

IGBT MODULE ( S-Series )
IGBT模块（ S系列）

晶体 晶体管 电动机控制 双极性晶体管 栅 局域网
文件： 总2页 (文件大小：91K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
6-Pack IGBT  
1200V  
6MBI 15S-120L  
6x15A  
IGBT MODULE ( S-Series )  
n Outline Drawing  
n Features  
• NPT-Technologie  
• Solderable Package  
• Square SC SOA at 10 x IC  
• High Short Circuit Withstand-Capability  
• Small Temperature Dependence of the Turn-Off  
Switching Loss  
• Low Losses And Soft Switching  
n Applications  
• High Power Switching  
• A.C. Motor Controls  
• D.C. Motor Controls  
• Uninterruptible Power Supply  
n Maximum Ratings and Characteristics  
n Equivalent Circuit  
• Absolute Maximum Ratings ( Tc=25°C)  
Items  
Collector-Emitter Voltage  
Gate -Emitter Voltage  
Symbols  
Ratings  
1200  
Units  
V
V
VCES  
VGES  
±
20  
Continuous  
1ms  
Continuous  
1ms  
IC  
25 / 15  
50 / 30  
25 / 15  
50 / 30  
145  
+150  
-40 ~ +125  
2500  
Collector  
Current (25°C / 80°C)  
IC PULSE  
-IC  
-IC PULSE  
PC  
Tj  
Tstg  
Vis  
A
Max. Power Dissipation  
Operating Temperature  
Storage Temperature  
Isolation Voltage  
W
°C  
°C  
V
A.C. 1min.  
Screw Torque  
Mounting *1  
3.5  
Nm  
~
Note: *1:Recommendable Value; 2.5 3.5 Nm (M5)  
• Electrical Characteristics ( at Tj=25°C )  
Items  
Zero Gate Voltage Collector Current  
Gate-Emitter Leackage Current  
Gate-Emitter Threshold Voltage  
Collector-Emitter Saturation Voltage  
Input capacitance  
Symbols  
ICES  
IGES  
VGE(th)  
VCE(sat)  
Cies  
Coes  
Cres  
tON  
tr  
tOFF  
tf  
VF  
trr  
Test Conditions  
VGE=0V VCE=1200V  
Min.  
Typ.  
Max.  
1.0  
200  
9.0  
Units  
mA  
µA  
V
±
=
VCE=0V VGE  
20V  
VGE=20V IC=15mA  
VGE=15V IC=15A  
VGE=0V  
VCE=10V  
f=1MHz  
6.0  
2.1  
1800  
V
Output capacitance  
Reverse Transfer capacitance  
pF  
VCC=600V  
IC=15A  
0.60  
0.40  
0.45  
0.10  
1.2  
0.6  
1.0  
0.3  
3.3  
350  
Turn-on Time  
Turn-off Time  
µs  
±
=
VGE  
15V  
RG=82W  
IF=15A VGE=0V  
IF=15A  
Diode Forward On-Voltage  
Reverse Recovery Time  
V
ns  
• Thermal Characteristics  
Items  
Symbols  
Rth(j-c)  
Rth(j-c)  
Test Conditions  
Min.  
Typ.  
Max.  
0.86  
1.50  
Units  
IGBT  
Diode  
With Thermal Compound  
Thermal Resistance  
°C/W  
Rth(c-f)  
0.05  
For more information, contact:  
Collmer Semiconductor, Inc.  
P.O. Box 702708  
Dallas, TX 75370  
972-233-1589  
972-233-0481 Fax  
http://www.collmer.com  

相关型号：

6MBI180VB-120-50

 IGBT MODULE
FUJI

6MBI180VB-120-55

 IGBT MODULE (V series) 1200V / 180A / 6 in one package
FUJI

6MBI180VX-120-50

 IGBT MODULE
FUJI

6MBI180VX-120-55

 IGBT MODULE (V series) 1200V / 180A / 6 in one package
FUJI

6MBI20-060

 Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES
FUJI

6MBI200F-060

 Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel
FUJI

6MBI200FB-060

 IGBT MODULE
FUJI

6MBI20F-060

 IGBT(600V 20A)
FUJI

6MBI20GS-060

 IGBT(600V 20A)
FUJI

6MBI20L-060

 IGBT(600V 20A)
FUJI

6MBI20LS060

 TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 20A I(C)
ETC

6MBI20S-060

 6 PACK IGBT
ETC
©2020 ICPDF网 联系我们和版权申明