6MBI35S-140 [FUJI]
1400V / 35A 6 in one-package; 在单一包装1400V / 35A 6
| 型号： | 6MBI35S-140 |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | 1400V / 35A 6 in one-package |
| 文件： | 总4页 (文件大小：372K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT Modules
6MBI35S-140
IGBT MODULE ( S series)
1400V / 35A 6 in one-package
Features
· Compact Package
· P.C.Board Mount Module
· Low VCE(sat)
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item
Symbol
VCES
VGES
IC
Unit
V
Rating
Collector-Emitter voltage
Gate-Emitter voltage
Collector Continuous Tj=25°C
Equivalent Circuit Schematic
1400
V
±20
13(P)
A
50
current
Tj=75°C
Tj=25°C
Tj=75°C
35
1ms
IC pulse
A
5(Gv)
6(Ev)
9(Gw)
100
1(Gu)
10(Ew)
2(Eu)
70
-IC
A
35
15(V)
16(U)
14(W)
1ms
-IC pulse
A
70
240
7(Gy)
8(Ey)
11(Gz)
12(Ez)
3(Gx)
4(Ex)
Max. power dissipation (1 device)
Operating temperature
Storage temperature
Isolation voltage *1
PC
W
°C
°C
V
Tj
+150
17(N)
Tstg
-40 to +125
AC 2500 (1min.)
3.5
Vis
Screw torque
Mounting *2
N·m
*1:All terminals should be connected together when isolation test will be done.
*2: Recommendable value : 2.5 to 3.5 N·m (M5)
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Symbol
Characteristics
Conditions
Unit
Min.
Typ.
Max.
1.0
0.2
8.5
2.75
–
ICES
–
–
–
Zero gate voltage collector current
Gate-Emitter leakage current
VGE=0V, VCE=1400V
VCE=0V, VGE=±20V
VCE=20V, IC=35mA
Tj=25°C VGE=15V, IC=35A
Tj=125°C
mA
µA
V
IGES
–
5.5
–
VGE(th)
VCE(sat)
7.2
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
2.4
3.0
V
–
Cies
Coes
Cres
ton
tr
–
4200
875
770
0.35
0.25
0.1
–
Input capacitance
VGE=0V
pF
µs
–
–
Output capacitance
Reverse transfer capacitance
Turn-on time
VCE=10V
–
–
f=1MHz
–
1.2
0.6
–
VCC=800V
–
IC=35A
tr(i)
toff
tf
–
VGE=±15V
–
0.45
0.08
2.6
1.0
0.3
3.4
–
Turn-off time
RG=33Ω
–
VF
–
Diode forward on voltage
Reverse recovery time
Tj=25°C
Tj=125°C
IF=35A
IF=35A, VGE=0V
V
–
2.2
trr
–
–
0.35
µs
Thermal resistance characteristics
Item
Symbol
Characteristics
Conditions
Unit
Min.
Typ.
Max.
0.52
0.90
–
Rth(j-c)
Rth(j-c)
Rth(c-f)*2
IGBT
FWD
–
–
–
°C/W
°C/W
°C/W
Thermal resistance
–
–
the base to cooling fin
0.05
*2 : This is the value which is defined mounting on the additional cooling fin with thermal compound
6MBI35S-140
IGBT Module
Characteristics
[ Inverter ]
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 25°C (typ.)
Collector current vs. Collector-Emitter voltage
Tj= 125°C (typ.)
80
60
40
20
0
80
60
40
20
0
15V
VGE= 20V
12V
VGE= 20V
12V
15V
10V
10V
8V
8V
0
0
0
1
2
3
4
5
0
5
0
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
[ Inverter ]
[ Inverter ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25°C (typ.)
80
60
40
20
0
10
8
Tj= 125°C
Tj= 25°C
6
4
Ic= 70A
Ic= 35A
2
Ic= 17.5A
0
1
2
3
4
5
10
15
20
25
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
[ Inverter ]
[ Inverter ]
Dynamic Gate charge (typ.)
Vcc=800V, Ic=35A, Tj= 25°C
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
10000
1000
100
1000
800
600
400
200
0
25
20
15
10
5
Cies
Coes
Cres
0
5
10
15
20
25
30
35
100
200
300
400
Collector - Emitter voltage : VCE [ V ]
Gate charge : Qg [ nC ]
6MBI35S-140
IGBT Module
[ Inverter ]
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=800V, VGE=±15V, Rg= 33ohm, Tj= 25°C
Switching time vs. Collector current (typ.)
Vcc=800V, VGE=±15V, Rg= 33ohm, Tj= 125°C
1000
1000
500
toff
toff
500
ton
tr
ton
tr
100
100
50
tf
tf
50
0
20
40
60
0
0
0
20
40
60
Collector current : Ic [ A ]
Collector current : Ic [ A ]
[ Inverter ]
[ Inverter ]
Switching time vs. Gate resistance (typ.)
Vcc=800V, Ic=35A, VGE=±15V, Tj= 25°C
Switching loss vs. Collector current (typ.)
Vcc=800V, VGE=±15V, Rg=33ohm
5000
14
12
10
8
Eon(125°C)
1000
Eon(25°C)
500
Eoff(125°C)
Eoff(25°C)
Err(125°C)
Err(25°C)
6
toff
4
ton
tr
100
2
tf
50
10
0
50
100
500
20
40
60
Gate resistance : Rg [ohm]
Collector current : Ic [ A ]
[ Inverter ]
[ Inverter ]
Switching loss vs. Gate resistance (typ.)
Vcc=800V, Ic=35A, VGE=±15V, Tj= 125°C
Reverse bias safe operating area
+VGE=15V, -VGE=<15V, Rg=>33ohm, Tj=<125°C
25
20
15
10
5
100
80
60
40
20
0
Eon
Eoff
Err
0
10
50
100
500
200
400
600
800
1000 1200 1400 1600
Gate resistance : Rg [ohm]
Collector - Emitter voltage : VCE [ V ]
6MBI35S-140
IGBT Module
Forward current vs. Forward on voltage (typ.)
Reverse recovery characteristics (typ.)
Vcc=800V, VGE=±15V, Rg=33ohm
80
60
40
20
300
100
Tj=25°C
Tj=125°C
trr(125°C)
trr(25°C)
Irr(125°C)
Irr(25°C)
0
0
10
1
2
3
4
0
10
20
30
40
50
60
Forward on voltage : VF [ V ]
Forward current : IF [ A ]
Transient thermal resistance
3
1
FWD
IGBT
0.1
0.01
0.001
0.01
0.1
1
Pulse width : Pw [ sec ]
Outline Drawings, mm
107.5±1
93±0.3
4-ø6.1±0.3
2-ø5.5±0.3
16.02
15.24
15.24
15.24
15.24
17
13
ø2.5±0.1
69.6±0.3
93±0.3
ø2.1±0.1
A
A
Section A-A
ø0.4
1
12
3.81
16.02 11.43 11.43 11.43 11.43 11.43
1.15±0.2
mass : 180g
Shows theory dimensions
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FUJI
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