YG831C04R [FUJI]
SCHOTTKY BARRIER DIODE; 肖特基二极管
| 型号： | YG831C04R |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | SCHOTTKY BARRIER DIODE |
| 文件： | 总3页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
YG831C04R
(40V / 6A TO-22OF15)
Outline Drawings
SCHOTTKY BARRIER DIODE
+0.2
-0.1
4.5±0.2
2.7±0.2
10±0.5
ø3.2
1
2
3
1.2±0.2
0.6 +-00.2
2.7±0.2
Features
Low VF
0.7±0.2
2.54±0.2
Super high speed switching.
High reliability by planer design.
JEDEC
EIAJ
SC-67
Applications
High speed power switching.
Connection Diagram
2
1
3
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Symbol
VRRM
VRSM
Viso
Conditions
Rating
40
Item
Unit
V
Repetitive peak reverse voltage
Repetitive peak surge reverse voltage
Isolating voltage
40
tw=500ns, duty=1/40
V
Terminals to Case,
AC. 1min.
1500
6*
V
duty=1/2, Tc=122°C
Square wave
IO
Average output current
Suege current
A
IFSM
Tj
80
Sine wave 10ms
A
+150
Operating junction temperature
Storage temperature
°C
°C
Tstg
-40 to +150
*
Out put current of centertap full wave connection.
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Item
Symbol
VF
Conditions
IF=2.0A
Unit
V
Max.
0.53
2.0
Forward voltage drop **
Reverse current **
Thermal resistance
IR
VR=VRRM
mA
Rth(j-c)
Junction to case
°C/W
5.0
**Rating per element
Mechanical Characteristics
N · m
g
0.3 to 0.5
2.3
Recommended torque
Mounting torque
Weight
(40V / 6A TO-22OF15)
YG831C04R
Characteristics
Reverse Characteristic (typ.)
Forward Characteristic (typ.)
102
101
100
10-1
10-2
10-3
Tj=150 o
C
Tj=125 o
C
10
Tj=100 o
C
Tj=150 o
Tj=125 o
C
1
C
Tj=100 o
Tj=25 o
C
C
Tj= 25 o
C
0.1
0.01
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0
0
1
10
20
30
40
50
VR Reverse Voltage (V)
VF Forward Voltage (V)
Reverse Power Dissipation
Forward Power Dissipation
4.0
3.8
3.6
3.4
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Io
DC
360°
λ
VR
360°
α
Square wave λ=60 o
Square wave λ=120 o
Sine wave λ=180 o
λ=180o
Square wave λ=180 o
DC
Per 1element
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2
Io Average Forward Current (A)
5
10
15
20
25
30
35
40
45
VR Reverse Voltage (V)
Junction Capacitance Characteristic (typ.)
Current Derating (Io-Tc)
1000
100
10
160
155
150
145
140
135
130
125
120
115
110
105
100
95
DC
Sine wave λ=180 o
Square wave λ=180 o
Square wave λ=120 o
360°
λ
Io
Square wave λ=60 o
VR=30V
90
85
80
10
100
0
1
2
3
4
5
6
7
8
9
VR Reverse Voltage (V)
Io Average Output Current (A)
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
YG831C04R
(40V / 6A TO-22OF15)
Surge Capability
1000
100
10
1
10
100
Number of Cycles at 50Hz
Transient Thermal Impedance
102
101
100
10-1
10-3
10-2
10-1
t
100
101
102
Time (sec.)
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