YG911S3R [FUJI]
LOW LOSS SUPER HIGH SPEED DIODE; 低损失超高速二极管
| 型号： | YG911S3R |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | LOW LOSS SUPER HIGH SPEED DIODE |
| 文件： | 总3页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
YG911S3R
(300V / 5A TO-22OF15)
Outline Drawings
LOW LOSS SUPER HIGH SPEED DIODE
+0.2
-0.1
4.5±0.2
2.7±0.2
10.5±0.5
ø3.2
1.2±0.2
Features
Low VF
0.7±0.2
0.6±0.2
2.7±0.2
5.08±0.4
Super high speed switching.
High reliability by planer design.
Applications
JEDEC
EIAJ
SC-67
High speed power switching.
Connection Diagram
3
1
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Symbol
VRRM
VRSM
Viso
Conditions
Rating
Item
Unit
300
300
Repetitive peak reverse voltage
Repetitive peak surge reverse voltage
Isolation voltage
V
V
Terminals to Case,
AC. 1min.
1500
V
duty=1/2, Tc=128°C
Rectangl wave
IO
5
Average output current
Surge current
A
IFSM
Tj
Sine wave 10ms
40
A
-40 to +150
-40 to +150
Operating junction temperature
Storage temperature
°C
°C
Tstg
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Item
Symbol
VF
Conditions
IF=5.0A
Max.
1.2
Unit
V
Forward voltage Drop
Reverse current
IR
VR=VRRM
100
35
µA
Reverse recovery time
Thermal resistance
trr
IF=0.1A,IR=0.2A,Irec=0.05A
Junction to case
ns
Rth(j-c)
3.5
°C/W
Mechanical Characteristics
Mounting torque
N · m
g
0.3 to 0.5
2.3
Recommended torque
Weight
(300V / 5A TO-22OF15)
YG911S3R
Characteristics
Forward Characteristic
(typ.)
Reverse Characteristic (typ.)
104
103
102
101
100
10-1
100
10
1
Tj=150 oC
Tj=125 oC
Tj=100 oC
Tj=150 o
Tj=125 o
Tj=100 o
C
C
C
Tj=25 o
C
Tj= 25 oC
0.1
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8
0
50
100
150
200
250
300
350
VF Forward Voltage (V)
VR
Reverse Voltage (V)
Forward Power Dissipation
Reverse Power Dissipation
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
DC
Io
360°
λ
VR
360°
α
Square wave λ=60o
Square wave
=120 o
λ
Sine wave λ=180 o
α =180o
Square wave
=180 o
DC
λ
Per 1element
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
0
50
100
150
200
250
300
Io Average Forward Current (A)
VR
Reverse Voltage (V)
Junction Capacitance Characteristic
(typ.)
Current Derating (Io-Tc)
100
10
1
160
155
150
145
140
135
130
125
120
115
110
DC
Sine wave λ=180o
Square wave λ=180o
360°
Square wave λ=120o
λ
Io
Square wave λ=60o
VR=300V
0.1
1
10
100
0
2
3
5
8
I1o Average Out4put Current6 (A) 7
VR
Reverse Voltage (V)
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
A-172
YG911S3R
(300V / 5A TO-22OF15)
Surge Capability
100
10
1
1
10
100
Number of Cycles at 50Hz
Transient Thermal Impedance
102
101
100
10-1
10-2
10-1
100
101
102
103
t
Time (sec.)
A-173
相关型号：
YG967C6R
Rectifier Diode, 1 Phase, 2 Element, 10A, 600V V(RRM), Silicon, TO-220AB, TO-220F, FULL PACK-3
FUJI
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