MBRTA60020 [GENESIC]
Low VF Silicon Power Schottky Diode;
| 型号： | MBRTA60020 |
| 厂家： | 
GeneSiC Semiconductor, Inc. |
| 描述： | Low VF Silicon Power Schottky Diode |
| 文件： | 总3页 (文件大小：400K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBRTA60020 thru MBRTA60040R
VRRM = 20 V - 40 V
IF(AV) = 600 A
Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 20 V to 40 V VRRM
Heavy Three Tower Package
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions
MBRTA60035(R) MBRTA60040(R)
Unit
Parameter
Symbol
MBRTA60020(R) MBRTA60030(R)
Repetitive peak reverse
voltage
VRRM
35
40
20
30
V
VRMS
VDC
Tj
25
28
RMS reverse voltage
14
21
V
V
35
40
DC blocking voltage
Operating temperature
Storage temperature
20
30
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
°C
Tstg
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Conditions
MBRTA60035(R) MBRTA60040(R)
Parameter
Symbol
IF(AV)
IFSM
MBRTA60020(R) MBRTA60030(R)
Unit
A
Average forward current
(per pkg)
TC = 100 °C
600
4000
0.70
600
4000
0.70
600
4000
0.70
600
4000
0.70
Peak forward surge current
(per leg)
tp = 8.3 ms, half sine
IFM = 300 A, Tj = 25 °C
A
Maximum instantaneous
forward voltage (per leg)
VF
V
Tj = 25 °C
Tj = 100 °C
Tj = 150 °C
1
1
1
1
Reverse current at rated
DC blocking voltage (per
leg)
IR
10
50
10
50
mA
10
50
10
50
Thermal characteristics
Thermal resistance,
junction - case (per leg)
RΘJC
0.28
0.28
0.28
0.28
°C/W
1
www.genesicsemi.com/silicon-products/schottky-rectifiers/
MBRTA60020 thru MBRTA60040R
2
www.genesicsemi.com/silicon-products/schottky-rectifiers/
MBRTA60020 thru MBRTA60040R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
3
www.genesicsemi.com/silicon-products/schottky-rectifiers/
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