GDSSF3611E [GOOD-ARK]
Advanced trench MOSFET process technology;
| 型号： | GDSSF3611E |
| 厂家： | 
GOOD-ARK ELECTRONICS |
| 描述： | Advanced trench MOSFET process technology |
| 文件： | 总5页 (文件大小：353K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GDSSF3611E
Main Product Characteristics:
VDSS -30 V
RDS(on) 10.6 mΩ(typ.)
ID -12A
Markingandpin
Assignment
Schematicdiagram
Features and Benefits:
AdvancedtrenchMOSFETprocesstechnology
Special designed for PWM, load switching and
generalpurposeapplications
Ultralowon-resistancewithlowgatecharge
Fastswitchingandreversebodyrecovery
150℃operatingtemperature
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficientandreliabledeviceforuseinpowerswitchingapplicationandawidevarietyofotherapplications
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Parameter
Max.
-12
Units
Continuous Drain Current, VGS @ 10V①
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
-7.4
A
-48
PD @TC = 25°C
VDS
Power Dissipation③
2
W
V
Drain-Source Voltage
-30
VGS
Gate-to-Source Voltage
± 20
V
TJ TSTG
Operating Junction and Storage Temperature Range
-55 to +150
°C
Thermal Resistance
Symbol
Characterizes
Junction-to-ambient (t ≤ 10s) ④
Typ.
Max.
Units
RθJA
—
62.5
℃/W
Suzhou Goodark Electronics Co., Ltd
Version 1.0
GD
SSF3611E
Electrical Characterizes @TA=25℃unless otherwise specified
Symbol Parameter
Min.
-30
—
—
1
Typ.
—
Max.
—
13
16
2
Units
Conditions
V(BR)DSS Drain-to-Source breakdown voltage
V
VGS = 0V, ID = 250μA
VGS =-10.0V, ID =-10.0A
VGS =-4.50V, ID =-7.50A
VDS = VGS, ID = 250μA
VDS = -30V,VGS = 0V
VGS = 20V
10.6
14.1
—
RDS(on)
Static Drain-to-Source on-resistance
mΩ
VGS(th)
IDSS
Gate threshold voltage
V
Drain-to-Source leakage current
—
—
—
—
—
—
—
—
—
—
—
—
—
—
-1
μA
—
10
-10
—
—
—
—
—
—
—
—
—
—
IGSS
Gate-to-Source forward leakage
μA
nC
—
VGS = -20V
Qg
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
55
ID = -10A,
Qgs
Qgd
td(on)
tr
3.5
18
VDS=-25V,
VGS = -10V
8.0
5.8
56
VGS=-10V, VDS=-15V,
RL=15Ω,
ns
td(off)
tf
Turn-Off delay time
Fall time
RGEN=3Ω
38
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer capacitance
3224
459
425
VGS = 0V
VDS = -15V
ƒ = 1MHz
pF
Source-Drain Ratings and Characteristics
Symbol
Parameter
Continuous Source Current
(Body Diode)
Min.
Typ.
Max.
Units
Conditions
MOSFET symbol
showing the
IS
—
—
-12
A
integral reverse
Pulsed Source Current
(Body Diode)
ISM
—
—
-48
A
p-n junction diode.
IS=-2.1A, VGS=0V
TJ = 25°C, IF =-10A, di/dt =
100A/μs
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
-0.73
16
-1.2
—
V
ns
uC
Qrr
5.9
—
Suzhou Goodark Electronics Co., Ltd
Version 1.0
GDSSF3611E
Test circuits and Waveforms
Switch time test circuit:
Switch Waveforms:
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-ambient thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C.
⑥ The maximum current rating is limited by bond-wires.
Suzhou Goodark Electronics Co., Ltd
Version 1.0
GDSSF3611E
Mechanical Data：
SOP8 PACKAGE OUTLINE DIMENSION
Dimension In Millimeters
Dimension In Inches
Symbol
Min
1.350
0.100
1.280
Max
1.750
0.250
1.480
Min
0.053
0.004
0.050
Max
0.069
0.010
0.058
A
A1
A2
b
0.406
0.016
c
D
0.173
4.800
3.800
5.800
0.233
5.000
4.000
6.200
0.007
0.189
0.150
0.228
0.009
0.197
0.157
0.244
E
E1
e
1.27TYP
0.050TYP
L
0.400
1.250
0.016
0.050
Suzhou Goodark Electronics Co., Ltd
Version 1.0
GD
SSF3611E
Ordering and Marking Information
Device Marking: SSF3611E
Package (Available)
SOP-8
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package Units/ Tapes/Inner
Units/Inner Inner
Units/Carton
Type
Tape
Box
Box
Boxes/Carton Box
Box
SOP-8
2500
2
5000
8
40000
Suzhou Goodark Electronics Co., Ltd
Version 1.0
相关型号：
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