GDSSF2816EB_15 [GOOD-ARK]
GENERAL FEATURES;
| 型号： | GDSSF2816EB_15 |
| 厂家： | 
GOOD-ARK ELECTRONICS |
| 描述： | GENERAL FEATURES |
| 文件： | 总4页 (文件大小：444K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GDSSF2816EB
DESCRIPTION
The SSF2816EB uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 0.75V.
GENERAL FEATURES
● VDS = 20V,ID = 7A
Schematic diagram
RDS(ON) < 30mΩ @ VGS=2.5V
RDS(ON) < 26mΩ @ VGS=3.1V
RDS(ON) < 23mΩ @ VGS=4V
RDS(ON) < 22mΩ @ VGS=4.5V
ESD Rating：2500V HBM
● High Power and current handling capability
● Lead free product is acquired
● Surface Mount Package
Marking and pin Assignment
Application
●Battery protection
●Load switch
●Power management
TSSOP-8 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
SSF2816EB
SSF2816EB
TSSOP-8
Ø330mm
12mm
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
VDS
Limit
20
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
±12
7
VGS
A
ID
Drain Current-Continuous@ Current-Pulsed (Note 1)
25
A
IDM
Maximum Power Dissipation
1.5
W
℃
PD
Operating Junction and Storage Temperature Range
-55 To 150
TJ,TSTG
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
83
℃/W
Suzhou Goodark Electronics Co., Ltd
Version 1.0
GDSSF2816EB
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Symbol
Condition
Min Typ
Max
Unit
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
20
V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
IDSS
IGSS
VDS=20V,VGS=0V
VGS=±4.5V,VDS=0V
VGS=±10V,VDS=0V
1
μA
nA
uA
±200
±10
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=4.5V, ID=6.5A
VGS=4V, ID=6A
0.6
0.75
16.5
17
1.2
22
23
26
30
V
mΩ
mΩ
mΩ
mΩ
S
Drain-Source On-State Resistance
VGS=3.1V, ID=5.5A
VGS=2.5V, ID=5.5A
VDS=10V,ID=6.5A
19
22
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
6.6
Clss
Coss
Crss
600
330
140
PF
PF
PF
VDS=8V,VGS=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
td(on)
tr
td(off)
tf
10
11
35
30
10
2.3
3
20
25
70
60
15
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
VDD=10V,ID=1A
VGS=4.5V,RGEN=6Ω
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Qg
Qgs
Qgd
VDS=10V,ID=7A,
VGS=4.5V
Gate-Source Charge
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=1.5A
0.84
1.2
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
Suzhou Goodark Electronics Co., Ltd
Version 1.0
GDSSF2816EB
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Vdd
Rl
Vin
D
Vout
Vgs
Rgen
G
S
Figure 2:Switching Waveform
Figure 1:Switching Test Circuit
Square Wave Pluse Duration(sec)
Figure 3 Normalized Maximum Transient Thermal Impedance
Suzhou Goodark Electronics Co., Ltd
Version 1.0
GDSSF2816EB
TSSOP-8 PACKAGE INFORMATION
NOTES：
1. Dimensions are inclusive of plating
2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils.
3. Dimension L is measured in gauge plane.
4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
Suzhou Goodark Electronics Co., Ltd
Version 1.0
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