SSF11NS60 [GOOD-ARK]
600V N-Channel MOSFET;
| 型号： | SSF11NS60 |
| 厂家： | 
GOOD-ARK ELECTRONICS |
| 描述： | 600V N-Channel MOSFET |
| 文件： | 总7页 (文件大小：665K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSF11NS60
600V N-Channel MOSFET
Main Product Characteristics
VDSS
RDS(on)
ID
600V
0.36Ω (typ.)
11A
MarkingandPin
SchematicDiagram
Assignment
TO-220
Features and Benefits
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Lead free product
Description
The SSF11NS60 series MOSFET is a new technology, which combines an innovative super junction
technology and advance process. This new technology achieves low RDS(ON), energy saving, high
reliability and uniformity, superior power density and space saving.
Absolute Max Rating
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
11
Continuous Drain Current, VGS @ 10V①
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
A
7
44
162
W
W/°C
V
Power Dissipation③
PD @TC = 25°C
Linear Derating Factor
1.5
VDS
Drain-Source Voltage
600
VGS
Gate-to-Source Voltage
± 30
281
V
EAS
Single Pulse Avalanche Energy @ L=22.5mH
Avalanche Current @ L=22.5mH
Operating Junction and Storage Temperature Range
mJ
A
IAS
5
TJ TSTG
-55 to +150
°C
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Page 1 of 7
Rev.1.2
SSF11NS60
600V N-Channel MOSFET
Thermal Resistance
Symbol
RθJC
Characteristics
Typ.
—
Max.
0.77
62
Units
℃/W
℃/W
Junction-to-case③
RθJA
—
Junction-to-ambient (t ≤ 10s) ④
Electrical Characteristics @TA=25℃ unless otherwise specified
Symbol Parameter
Min.
600
—
—
2
Typ.
—
Max.
—
Units
Conditions
V(BR)DSS Drain-to-Source breakdown voltage
V
VGS = 0V, ID = 250μA
VGS=10V,ID = 5.5A
TJ = 125℃
0.36
0.88
—
0.41
—
RDS(on)
VGS(th)
IDSS
Static Drain-to-Source on-resistance
Gate threshold voltage
Ω
V
4
VDS = VGS, ID = 250μA
TJ = 125℃
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.46
—
—
1
VDS =600V,VGS = 0V
TJ = 125°C
Drain-to-Source leakage current
Gate-to-Source forward leakage
μA
nA
—
50
100
-100
—
—
VGS =30V
IGSS
—
VGS = -30V
Qg
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
ID = 11A,
28.41
6.64
12.34
12.85
9.45
30.40
6.30
824.8
78.06
2.75
nC
ns
VDS=480V,
Qgs
Qgd
td(on)
tr
—
VGS = 10V
—
—
VGS=10V, VDS=300V,
RL=54.5Ω,
—
RGEN=4.7Ω
td(off)
tf
Turn-Off delay time
Fall time
—
ID=5.5A
—
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer capacitance
—
VGS = 0V
pF
VDS = 50V
ƒ = 600KHz
—
—
Source-Drain Ratings and Characteristics
Symbol
Parameter
Continuous Source Current
(Body Diode)
Min.
Typ.
Max.
Units
Conditions
MOSFET symbol
showing the
IS
—
—
11
A
integral reverse
p-n junction diode.
Pulsed Source Current
(Body Diode)
ISM
—
—
—
44
A
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
1.5
—
V
IS=11A, VGS=0V
ns
uC
TJ = 25°C, IF =11A, di/dt =
100A/μs
313
Qrr
—
2.97
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Page 2 of 7
Rev.1.2
SSF11NS60
600V N-Channel MOSFET
Test Circuits and Waveforms
aveforms:
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C.
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Page 3 of 7
Rev.1.2
SSF11NS60
600V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 2. Typ. Gate to source cut-off voltage
Figure 1: Power dissipation
Figure 3. Typ. gate charge
Figure 4: Typ. Capacitances
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Page 4 of 7
Rev.1.2
SSF11NS60
600V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Drain-source breakdown voltage
Figure 6. Drain-source on-state resistance
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Page 5 of 7
Rev.1.2
SSF11NS60
600V N-Channel MOSFET
Mechanical Data
TO220 PACKAGE OUTLINE DIMENSION_GN
Dimension In Millimeters
Dimension In Inches
Symbol
Min
Nom
4.550
1.300
2.340
1.270
1.370
0.800
0.500
15.400
8.900
2.800
10.000
8.700
3.600
Max
Min
0.173
0.050
0.088
-
0.050
0.030
0.019
0.594
0.346
0.107
0.390
-
Nom
0.179
0.051
0.092
0.050
0.054
0.031
0.020
0.606
0.350
0.110
0.394
0.343
0.142
Max
0.185
0.052
0.096
-
0.058
0.033
0.021
0.618
0.354
0.113
0.398
-
A
A1
A2
b
b1
b2
C
4.400
1.270
2.240
-
1.270
0.750
0.480
15.100
8.800
2.730
9.900
-
4.700
1.330
2.440
-
1.470
0.850
0.520
15.700
9.000
2.870
10.100
-
D
D1
D2
E
E1
ФP
3.570
1.400
3.630
1.600
0.141
0.143
ФP1
1.500
0.055
0.059
0.1BSC
0.2BSC
0.526
0.063
2.54BSC
5.08BSC
13.360
e
e1
L
13.150
13.570
0.518
0.534
L1
L2
7.35REF
0.29REF
2.900
1.650
0.900
50
50
50
3.000
1.750
1.000
70
70
70
3.100
1.850
1.100
90
90
90
0.114
0.065
0.035
50
50
50
0.118
0.069
0.039
70
70
70
0.122
0.073
0.043
90
90
90
L3
L4
Q 1
Q 2
Q 3
Q 4
10
30
50
10
30
50
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Page 6 of 7
Rev.1.2
SSF11NS60
600V N-Channel MOSFET
Ordering and Marking Information
Device Marking: SSF11NS60
Package (Available)
TO220
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package Units/ Tubes/Inner
Units/Inner Inner
Units/Carton
Type
Tube
Box
Box
Boxes/Carton Box
Box
TO220
50
20
1000
6
6000
Reliability Test Program
Test Item
High
Conditions
Tj=125℃ to 150℃ @
Duration Sample Size
168 hours
500 hours
1000 hours
3 lots x 77 devices
Temperature
Reverse
80% of Max
VDSS/VCES/VR
Bias(HTRB)
High
Tj=150℃ @ 100% of
168 hours
500 hours
1000 hours
3 lots x 77 devices
Temperature
Gate
Max VGSS
Bias(HTGB)
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Page 7 of 7
Rev.1.2
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