SSF1221J2 [GOOD-ARK]
12V P-Channel MOSFET;
| 型号： | SSF1221J2 |
| 厂家： | 
GOOD-ARK ELECTRONICS |
| 描述： | 12V P-Channel MOSFET |
| 文件： | 总5页 (文件大小：427K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSF1221J2
12V P-Channel MOSFET
Main Product Characteristics
VDSS -12V
RDS(on) 14.4 mΩ(typ.)
ID -12A
DFN2x2-6LPinAssignment
SchematicDiagram
Features and Benefits
AdvancedtrenchMOSFETprocess technology
Special designed for battery charge, load
switching in cellular handset and general
ultraportable applications
Ultralowon-resistancewithlowgatecharge
Fastswitching andreversebodyrecovery
150℃operating temperature
Leadfreeproduct
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient andreliable device for use in battery charge and load switching in cellular handset and a widevariety of
other ultraportableapplications.
Absolute Max Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Parameter
Max.
-12
Units
Continuous Drain Current, VGS @ 4.5V①
Continuous Drain Current, VGS @ 4.5V①
Pulsed Drain Current②
A
-7.4
-28
PD @TC = 25°C
VDS
2.4
W
V
Power Dissipation③
Drain-Source Voltage
-12
VGS
Gate-to-Source Voltage
± 8
V
TJ TSTG
Operating Junction and Storage Temperature Range
-55 to +150
°C
Thermal Resistance
Symbol
RθJC
Characteristics
Typ.
6.9
52
Max.
8
Units
℃/W
℃/W
Junction-to-case
RθJA
62.5
Junction-to-ambient (t ≤ 10s) ④
www.goodark.com
Page 1 of 5
Rev.1.1
SSF1221J2
12V P-Channel MOSFET
Electrical Characteristics @TA=25℃ unless otherwise specified
Symbol Parameter
Min.
-12
—
Typ.
—
Max.
—
Units
Conditions
V(BR)DSS Drain-to-Source breakdown voltage
V
VGS = 0V, ID = 250μA
VGS =-4.5V, ID =-10A
VGS =-2.5V, ID =-8.9A
VGS =-1.8V, ID =-4.5A
VDS = VGS, ID = 250μA
VDS = -12V,VGS = 0V
VGS = 8V
14.4
18.9
26.4
—
16
21
38
-1
RDS(on)
Static Drain-to-Source on-resistance
mΩ
—
—
VGS(th)
IDSS
Gate threshold voltage
-0.4
—
V
Drain-to-Source leakage current
—
-1
μA
—
—
100
-100
—
IGSS
Gate-to-Source forward leakage
nA
S
—
—
VGS = -8V
gFS
Qg
Forward Transconductance
Total gate charge
-3
—
VDS = -5V, ID =-10A
ID = -10A,
—
21
—
nC
VDD=-6V,
Qgs
Qgd
td(on)
tr
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
—
2.5
6
—
VGS = -4.5V
—
—
—
30
—
VGS=-4.5V,
—
48
—
VDD=-6V,
ID = -10A,
ns
td(off)
tf
Turn-Off delay time
Fall time
—
97
—
RGEN=6Ω
—
65
—
Ciss
Coss
Crss
Input capacitance
—
2138
685
650
—
VGS = 0V
VDS = -6V
ƒ = 1MHz
pF
Output capacitance
Reverse transfer capacitance
—
—
—
—
Source-Drain Ratings and Characteristics
Symbol
Parameter
Continuous Source Current
(Body Diode)
Min.
Typ.
Max.
Units
Conditions
MOSFET symbol
showing the
IS
—
—
-12
A
integral reverse
p-n junction diode.
IS=-2A, VGS=0V
TJ = 25°C, IF =-10A,
di/dt = 100A/μs
Pulsed Source Current
(Body Diode)
ISM
—
—
-28
A
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
-0.77
16
-1.2
—
V
ns
uC
Qrr
5.9
—
www.goodark.com
Page 2 of 5
Rev.1.1
SSF1221J2
12V P-Channel MOSFET
Test Circuits and Waveforms
Switch time test circuit:
Switch Waveforms:
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-ambient thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C.
www.goodark.com
Page 3 of 5
Rev.1.1
SSF1221J2
12V P-Channel MOSFET
Mechanical Data
DFN 2 x 2-6L PACKAGE INFORMATION
Notes:
①Does not fully conform to JEDEC registration MO-229 dated Aug/2003.
②Dimensions are in millimeters.
③Dimensions and tolerances per ASME Y14.5M. 1994.
www.goodark.com
Page 4 of 5
Rev.1.1
SSF1221J2
12V P-Channel MOSFET
Ordering and Marking Information
Device Marking: 1221
Package (Available)
DFN 2x2-6L
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package Units/ Tapes/Inner
Type Tape Box
Units/Inner Inner
Units/Carton
Box
Boxes/Carton Box
Box
DFN2x2-6L 3000pcs 10pcs
15000pcs
4pcs
60000pcs
Reliability Test Program
Test Item
High
Conditions
Tj=125℃ or 150℃ @
Duration Sample Size
168 hours
500 hours
1000 hours
3 lots x 77 devices
Temperature
Reverse
80% of Max
VDSS/VCES/VR
Bias(HTRB)
High
Tj=125℃ or 150℃ @
168 hours
500 hours
1000 hours
3 lots x 77 devices
Temperature
Gate
100% of Max VGSS
Bias(HTGB)
www.goodark.com
Page 5 of 5
Rev.1.1
相关型号：
SSF12N60F
Power Field-Effect Transistor, 12A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN
GOOD-ARK
©2020 ICPDF网 联系我们和版权申明