SSF12N60F_15 [GOOD-ARK]
600V N-Channel MOSFET;
| 型号： | SSF12N60F_15 |
| 厂家： | 
GOOD-ARK ELECTRONICS |
| 描述： | 600V N-Channel MOSFET |
| 文件： | 总7页 (文件大小：1079K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSF12N60F
600V N-Channel MOSFET
Main Product Characteristics
VDSS
RDS(on)
ID
600V
0.55Ω (typ.)
12A
MarkingandPin
TO220F
SchematicDiagram
Assignment
Features and Benefits
AdvancedProcessTechnology
Special designed for PWM, load switching and
generalpurposeapplications
Ultralowon-resistancewithlowgatecharge
Fastswitching andreversebodyrecovery
150℃operating temperature
Leadfreeproduct
Description
These N-Channel enhancement mode power field effect transistors are produced using
proprietary MOSFET technology. This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching performance, and withstand high energy
pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
switch mode power supplies.
Absolute Max Rating
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
12
7.4
Continuous Drain Current, VGS @ 10V①
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
A
48
50
W
W/°C
V
Power Dissipation③
PD @TC = 25°C
Linear Derating Factor
0.4
VDS
Drain-Source Voltage
600
VGS
Gate-to-Source Voltage
± 30
458
V
EAS
Single Pulse Avalanche Energy @ L=6.36mH
Avalanche Current @ L=6.36mH
Operating Junction and Storage Temperature Range
mJ
A
IAS
12
TJ TSTG
-55 to + 150
°C
www.goodark.com
Page 1 of 7
Rev.1.1
SSF12N60F
600V N-Channel MOSFET
Thermal Resistance
Symbol
Characteristics
Typ.
—
Max.
2.5
62
Units
℃/W
℃/W
℃/W
RθJC
Junction-to-case③
—
Junction-to-ambient (t ≤ 10s) ④
Junction-to-Ambient (PCB mounted, steady-state) ④
RθJA
—
40
Electrical Characteristics @TA=25℃ unless otherwise specified
Symbol Parameter
Min.
600
—
—
2
Typ.
—
Max.
—
Units
Conditions
V(BR)DSS Drain-to-Source breakdown voltage
V
VGS = 0V, ID = 250μA
VGS=10V,ID = 6A
TJ = 125℃
0.55
1.25
—
0.7
—
RDS(on)
VGS(th)
IDSS
Static Drain-to-Source on-resistance
Gate threshold voltage
Ω
V
4
VDS = VGS, ID = 250μA
TJ = 125℃
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.84
—
—
1
VDS = 600V,VGS = 0V
TJ = 125℃
Drain-to-Source leakage current
Gate-to-Source forward leakage
μA
nA
—
50
100
-100
—
—
VGS =30V
IGSS
—
VGS = -30V
Qg
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
55.1
10.4
19.9
40.6
37.8
349
72.5
2151
184
8.1
ID = 10A,
nC
nS
pF
VDS=400V,
Qgs
Qgd
td(on)
tr
—
VGS = 10V
—
—
VGS=10V, VDS =200V,
—
RL=40Ω,
RGEN=50Ω
ID =5A
td(off)
tf
Turn-Off delay time
Fall time
—
—
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer capacitance
—
VGS = 0V
VDS = 25V
ƒ = 1MHz
—
—
Source-Drain Ratings and Characteristics
Symbol
Parameter
Continuous Source Current
(Body Diode)
Min.
Typ.
Max.
Units
Conditions
MOSFET symbol
showing the
IS
—
—
12
A
integral reverse
p-n junction diode.
IS=12A, VGS=0V
TJ = 25°C, IF =10A, di/dt =
100A/μs
Pulsed Source Current
(Body Diode)
ISM
—
—
48
A
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
0.88
586
1.4
—
V
nS
nC
Qrr
5122
—
www.goodark.com
Page 2 of 7
Rev.1.1
SSF12N60F
600V N-Channel MOSFET
Test Circuits and Waveforms
aveforms:
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
www.goodark.com
Page 3 of 7
Rev.1.1
SSF12N60F
600V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 2. Gate to source cut-off voltage
Figure 1: Typical Output Characteristics
Figure 3. Drain-to-Source Breakdown Voltage Vs.
Case Temperature
Figure 4: Normalized On-Resistance Vs. Case
Temperature
www.goodark.com
Page 4 of 7
Rev.1.1
SSF12N60F
600V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Maximum Drain Current Vs. Case
Temperature
Figure 6.Typical Capacitance Vs. Drain-to-Source
Voltage
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.goodark.com
Page 5 of 7
Rev.1.1
SSF12N60F
600V N-Channel MOSFET
Mechanical Data
TO220F PACKAGE OUTLINE DIMENSION
Dimension In Millimeters
Dimension In Inches
Symbol
Min
Nom
10.160
7.000
Max
Min
0.392
0.276
0.121
0.365
0.617
0.177
0.255
0.126
0.614
0.376
Nom
0.400
0.000
0.125
0.372
0.625
0.185
0.263
0.130
0.622
0.384
1.00 (TYP)
-
Max
0.408
0.000
0.129
0.380
0.633
0.193
0.271
0.134
0.630
0.392
A
9.960
10.360
A1
A2
A3
B1
B2
B3
C
C1
C2
D
3.080
9.260
15.670
4.500
6.480
3.200
15.600
9.550
3.180
9.460
15.870
4.700
6.680
3.300
15.800
9.750
3.280
9.660
16.070
4.900
6.880
3.400
16.000
9.950
2.54 (TYP)
D1
D2
D3
-
-
1.470
0.900
0.450
-
0.058
0.035
0.018
0.700
0.250
0.800
0.350
0.028
0.010
0.031
0.014
E
2.340
2.540
0.700
2.740
0.092
0.100
0.028
0.108
E1
1.0*450
1.0*450
0.020
0.109
E2
E3
E4
0.450
2.560
0.500
0.600
2.960
0.018
0.101
0.024
0.117
2.760
300
300
ϴ
www.goodark.com
Page 6 of 7
Rev.1.1
SSF12N60F
600V N-Channel MOSFET
Ordering and Marking Information
Device Marking: SSF12N60F
Package (Available)
TO220F
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package Units/ Tubes/Inner
Units/Inner Inner
Units/Carton
Type
Tube
Box
Box
Boxes/Carton Box
Box
TO220F
50
20
1000
6
6000
Reliability Test Program
Test Item
High
Conditions
Tj=125℃ to 150℃ @
Duration Sample Size
168 hours
500 hours
1000 hours
3 lots x 77 devices
Temperature
Reverse
80% of Max
VDSS/VCES/VR
Bias(HTRB)
High
Tj=150℃ @ 100% of
168 hours
500 hours
1000 hours
3 lots x 77 devices
Temperature
Gate
Max VGSS
Bias(HTGB)
www.goodark.com
Page 7 of 7
Rev.1.1
相关型号：
©2020 ICPDF网 联系我们和版权申明