SSF1321P [SECOS]
P-Channel MOSFET; P沟道MOSFET
| 型号： | SSF1321P |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | P-Channel MOSFET |
| 文件： | 总4页 (文件大小：449K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSF1321P
-1.7A, -20V, RDS(on) 0.079Ω
P-Channel MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
SOT-323
R
DS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC converters
and power management in portable and battery-powered
products such as computers, printers, PCMCIA cards,
cellular and cordless telephones.
A
L
3
3
Top View
C B
1
1
2
FEATURES
Low RDS(on) provides higher efficiency and
extends battery life.
Low thermal impedance copper leadframe
SOT-323 saves board space.
2
K
F
E
D
H
J
G
Fast switching speed.
High performance trench technology.
Drain
Millimeter
Min. Max.
1.80
1.80
1.15
0.80
1.20
0.20
Millimeter
REF.
REF.
PRODUCT SUMMARY
RDS(on) (
0.079@VGS= -4.5V
Min.
Max.
0.100 REF.
0.525 REF.
Gate
A
B
C
D
E
F
2.20
2.45
1.35
1.10
1.40
0.40
G
H
J
K
L
VDS(V)
-20
ID(A)
-1.7
-1.5
0.08
-
0.25
-
0.110@VGS= -2.5V
0.650 TYP.
Source
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
Drain – Source Voltage
SYMBOL
VDS
RATING
-20
UNIT
V
V
Gate – Source Voltage
VGS
±8
ID @ TA=25°C
ID @ TA=70°C
IDM
-1.7
Continuous Drain Current a
A
-1.4
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
-2.5
A
A
IS
±0.28
0.34
0.22
PD@ TA=25°C
PD@ TA=70°C
Power Dissipation a
W
Operating Junction & Storage Temperature
Range
TJ, TSTG
-55~150
°C
THERMAL RESISTANCE RATINGS
t ≦ 5 sec
Steady-State
375
430
Maximum Thermal Resistance
Junction-Ambient a
RθJA
°C / W
Note:
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
17-Jun-2010 Rev. A
Page 1 of 4
SSF1321P
-1.7A, -20V, RDS(on) 0.079Ω
P-Channel MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL MIN TYP MAX UNIT
TEST CONDITION
STATIC CARACTERISTICS
Gate-Threshold Voltage
VGS(th)
IGSS
-0.4
-
-
±100
-1
V
VDS= VGS, ID = -250μA
VDS= 0V, VGS= ±8V
Gate-Source Leakage Current
-
-
-
nA
-
VDS= -16V, VGS= 0V
Zero Gate Voltage Drain Current
On-State Drain Current a
IDSS
μA
A
-
-
-10
-
VDS= -16V, VGS= 0V, TJ= 55°C
VDS= -5V, VGS= -4.5V
VGS= -4.5V, ID= -1.7A
VGS= -2.5V, ID= -1.5A
VDS= -5V, ID= -1.25A
IS= -0.46A, VGS= 0V
ID(on)
-5
-
-
-
79
110
-
Drain-Source On-Resistance a
RDS(ON)
mΩ
-
-
9
Forward Transconductance a
Diode Forward Voltage
gFS
-
S
V
VSD
-
-0.65
-
DYNAMIC CHARACTERISTICS b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Rise Time
Qg
Qgs
-
-
-
-
-
-
-
7.2
1.7
1.5
10
9
-
-
-
-
-
-
-
VDS= -10V
nC
VGS= -4.5V
ID= -1.7A
Qgd
Td(ON)
TR
Td(OFF)
TF
VDD= -10V
IL= -1A
nS
VGEN= -4.5V
Turn-off Delay Time
Fall Time
27
11
RG= 6Ω
Notes：
a. Pulse test：PW ≦ 300us duty cycle ≦ 2%.
b. Guaranteed by design, not subject to production testing.
c. Repetitive rating, pulse width limited by junction temperature.
17-Jun-2010 Rev. A
Page 2 of 4
SSF1321P
-1.7A, -20V, RDS(on) 0.079Ω
P-Channel MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVES
17-Jun-2010 Rev. A
Page 3 of 4
SSF1321P
-1.7A, -20V, RDS(on) 0.079Ω
P-Channel MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVES
17-Jun-2010 Rev. A
Page 4 of 4
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