SSF2318E [GOOD-ARK]
20V N-Channel MOSFET;型号: | SSF2318E |
厂家: | GOOD-ARK ELECTRONICS |
描述: | 20V N-Channel MOSFET |
文件: | 总4页 (文件大小:323K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SSF2318E
20V N-Channel MOSFET
DESCRIPTION
The SSF2318E uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 2.5V.
GENERAL FEATURES
● VDS = 20V,ID =6.5A
Schematic Diagram
RDS(ON) < 34mΩ @ VGS=1.8V
RDS(ON) < 26mΩ @ VGS=2.5V
RDS(ON) < 22mΩ @ VGS=4.5V
ESD Rating:2000V HBM
● High Power and current handing capability
● Lead free product
● Surface Mount Package
Marking and Pin Assignment
APPLICATIONS
●Battery protection
●Load switch
SOT-23 Top View
●Power management
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape Width
Quantity
2318E
SSF2318E
SOT-23
Ø330mm
12mm
3000 units
ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
20
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
VDS
±8
VGS
6.5
30
A
ID
Drain Current-Continuous@ Current-Pulsed (Note 1)
A
IDM
Maximum Power Dissipation
1.4
W
℃
PD
Operating Junction and Storage Temperature Range
-55 To 150
TJ,TSTG
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
90
℃/W
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Page 1 of 4
Rev.1.0
SSF2318E
20V N-Channel MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=250μA
VDS=20V,VGS=0V
VGS=±4.5V,VDS=0V
VGS=±8V,VDS=0V
20
V
1
μA
uA
uA
±1
Gate-Body Leakage Current
IGSS
±10
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=4.5V, ID=6.5A
VGS=2.5V, ID=5.5A
VGS=1.8V, ID=5A
VDS=5V,ID=6.5A
0.4
0.6
18
21
26
7
1
V
22
26
34
mΩ
mΩ
mΩ
S
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
Coss
Crss
1160
200
PF
PF
PF
VDS=10V,VGS=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
140
td(on)
tr
td(off)
tf
6.5
13
50
30
10
2.3
3
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
VDD=10V,ID=1A
VGS=5V,RGEN=3Ω
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Qg
Qgs
Qgd
VDS=10V,ID=6.5A,
VGS=4.5V
Gate-Source Charge
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=1A
0.76
1
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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Page 2 of 4
Rev.1.0
SSF2318E
20V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ton
tr
toff
tf
td(on)
td(off)
Vdd
90%
90%
Rl
Vin
VOUT
INVERTED
D
Vout
10%
90%
10%
50%
Vgs
Rgen
G
VIN
50%
S
10%
PULSE WIDTH
Figure 2: Switching Waveforms
Figure 1:Switching Test Circuit
Square Wave Pluse Duration(sec)
Figure 3 Normalized Maximum Transient Thermal Impedance
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Page 3 of 4
Rev.1.0
SSF2318E
20V N-Channel MOSFET
SOT-23 PACKAGE INFORMATION
Dimensions in Millimeters (UNIT: mm)
Dimensions in Millimeters
Symbol
A
MIN.
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
MAX.
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
A1
A2
b
c
D
E
E1
e
0.950TYP
0.550REF
e1
L
1.800
2.000
L1
θ
0.300
0°
0.500
8°
NOTES
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact
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Page 4 of 4
Rev.1.0
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