SSF2336 [GOOD-ARK]

20V N-Channel MOSFET;


型号：	SSF2336
厂家：	GOOD-ARK ELECTRONICS
描述：	20V N-Channel MOSFET
文件：	总4页 (文件大小：313K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SSF2336

20V N-Channel MOSFET

DESCRIPTION

The SSF2336 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and operation

with gate voltages as low as 2.5V. This device is suitable

for use as a Battery protection or in other Switching

application.

Schematic Diagram

GENERAL FEATURES

● V_DS= 20V,I_D= 4.2A

R_DS(ON)< 80mΩ @ V_GS=2.5V

R_DS(ON)< 45mΩ @ V_GS=4.5V

● High Power and current handing capability

● Lead free product

Marking and Pin Assignment

● Surface Mount Package

APPLICATIONS

●Battery protection

●Load switch

●Power management

SOT-23 Top View

PACKAGE MARKING AND ORDERING INFORMATION

Device Marking

Device

Device Package

Reel Size

Tape Width

Quantity

3000 units

2336

SSF2336

SOT-23

Ø180mm

8 mm

ABSOLUTE MAXIMUM RATINGS (T_A=25℃unless otherwise noted)

Parameter

Symbol

V^DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

±12

4.2

V^GS

I_D

Drain Current-Continuous@ Current-Pulsed (Note 1)

I_DM

Maximum Power Dissipation

1.25

℃

P_D

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

THERMAL CHARACTERISTICS

Thermal Resistance,Junction-to-Ambient (Note 2)

R_θJA

140

℃/W

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Page 1 of 4

Rev.1.0

SSF2336

20V N-Channel MOSFET

ELECTRICAL CHARACTERISTICS (T_A=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min Typ

Max

Unit

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BV_DSS

V_GS=0V I_D=250μA

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

I_DSS

I_GSS

V_DS=20V,V_GS=0V

V_GS=±12V,V_DS=0V

μA

±100

V_GS(th)

R_DS(ON)

g_FS

V_DS=V_GS,I_D=250μA

V_GS=2.5V, I_D=3.6A

V_GS=4.5V, I_D=4.2A

V_DS=10V,I_D=4A

0.6

1.2

mΩ

Drain-Source On-State Resistance

Forward Transconductance

DYNAMIC CHARACTERISTICS (Note4)

Input Capacitance

C_lss

C_oss

C_rss

700

100

V_DS=15V,V_GS=0V,

F=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS (Note 4)

Turn-on Delay Time

t_d(on)

t_r

t_d(off)

t_f

_DD=10V, R_L= 2.8 Ω

V_GS=4.5V,R_GEN=6Ω,

I_D=3.6A,

Turn-on Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Q_g

Q_gs

Q_gd

_DS=10V,I_D=4.2A,V_GS=4.5V

Gate-Source Charge

Gate-Drain Charge

1.8

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage (Note 3)

V_SD

V_GS=0V,I_S=1.3A

1.2

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production testing.

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Page 2 of 4

Rev.1.0

SSF2336

20V N-Channel MOSFET

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

t_on

t_r

t_off

t_f

Vdd

t_d(on)

t_d(off)

90%

Vin

90%

Vout

V_OUT

INVERTED

Vgs

Rgen

10%

90%

10%

50%

V_IN

50%

10%

PULSE WIDTH

Figure 2:Switching Waveforms

Figure 1: Switching Test Circuit

Square Wave Pluse Duration(sec)

Figure 3: Normalized Maximum Transient Thermal Impedance

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Page 3 of 4

Rev.1.0

SSF2336

20V N-Channel MOSFET

SOT-23 PACKAGE INFORMATION

Dimensions in Millimeters (UNIT: mm)

Dimensions in Millimeters

Symbol

MIN.

0.900

0.000

0.900

0.300

0.080

2.800

1.200

2.250

MAX.

1.150

0.100

1.050

0.500

0.150

3.000

1.400

2.550

0.950TYP

0.550REF

1.800

2.000

0.300

0°

0.500

8°

NOTES

1. All dimensions are in millimeters.

2. Tolerance ±0.10mm (4 mil) unless otherwise specified

3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.

4. Dimension L is measured in gauge plane.

5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.

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Page 4 of 4

Rev.1.0

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