SSF6005_15 [GOOD-ARK]
60V N-Channel MOSFET;
| 型号： | SSF6005_15 |
| 厂家： | 
GOOD-ARK ELECTRONICS |
| 描述： | 60V N-Channel MOSFET |
| 文件： | 总7页 (文件大小：1123K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSF6005
60V N-Channel MOSFET
Main Product Characteristics
VDSS 60V
RDS(on) 2.7mohm(typ.)
ID 160A
MarkingandPin
Assignment
SchematicDiagram
TO-220
Features and Benefits
AdvancedtrenchMOSFETprocess technology
Special designed for PWM, load switching and
generalpurposeapplications
Ultralowon-resistancewithlowgatecharge
Fastswitching andreversebodyrecovery
175℃operating temperature
Leadfreeproduct
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient andreliable devicefor useinpower switching application and awidevarietyof other applications.
Absolute Max Rating
Symbol
Parameter
Max.
160
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V①
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
A
110
640
230
W
W/°C
V
Power Dissipation③
PD @TC = 25°C
Linear Derating Factor
1.5
VDS
Drain-Source Voltage
60
VGS
Gate-to-Source Voltage
± 20
350
V
EAS
mJ
A
Single Pulse Avalanche Energy @ L=0.07mH②
Avalanche Current @ L=0.07mH②
Operating Junction and Storage Temperature Range
IAS
100
TJ TSTG
-55 to + 175
°C
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Page 1 of 7
Rev.1.0
SSF6005
60V N-Channel MOSFET
Thermal Resistance
Symbol
Characteristics
Typ.
—
Max.
0.65
62
Units
℃/W
℃/W
℃/W
RθJC
Junction-to-case③
—
Junction-to-ambient (t ≤ 10s) ④
Junction-to-Ambient (PCB mounted, steady-state) ④
RθJA
—
40
Electrical Characteristics @TA=25℃ unless otherwise specified
Symbol Parameter
Min.
60
—
—
2
Typ.
—
Max.
—
3.5
—
4
Units
Conditions
V(BR)DSS Drain-to-Source breakdown voltage
V
VGS = 0V, ID = 250μA
VGS=10V,ID = 75A
TJ = 125℃
2.7
RDS(on)
VGS(th)
IDSS
Static Drain-to-Source on-resistance
Gate threshold voltage
mΩ
V
4.6
—
VDS = VGS, ID = 150μA
TJ = 125℃
—
—
—
—
-100
—
—
—
—
—
—
—
—
—
—
1.98
—
—
1
VDS = 75V,VGS = 0V
TJ = 125°C
Drain-to-Source leakage current
Gate-to-Source forward leakage
μA
nA
—
50
100
—
—
—
—
—
—
—
—
—
—
—
—
VGS =20V
IGSS
—
VGS = -20V
Qg
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
196.2
42.5
70.8
26.8
101.5
95
ID = 75A,
nC
ns
VDS=30V,
Qgs
Qgd
td(on)
tr
VGS = 10V
VGS=10V, VDS=35.3V,
RL=0.47Ω,
RGEN=2.7Ω
ID=75A
td(off)
tf
Turn-Off delay time
Fall time
125.1
8878
733
635
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer capacitance
VGS = 0V
pF
VDS = 50V
ƒ = 700KHz
Source-Drain Ratings and Characteristics
Symbol
Parameter
Continuous Source Current
(Body Diode)
Min.
Typ.
Max.
Units
Conditions
MOSFET symb
showing the
IS
—
—
160
A
integral reverse
p-n junction diode.
IS=75A, VGS=0V
TJ = 25°C, IF =75A, di/dt =
100A/μs
Pulsed Source Current
(Body Diode)
ISM
—
—
640
A
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
0.9
1.3
—
V
38.4
54.5
ns
nC
Qrr
—
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Page 2 of 7
Rev.1.0
SSF6005
60V N-Channel MOSFET
Test Circuits and Waveforms
aveforms:
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C.
⑥ The maximum current rating is limited by bond-wires.
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Page 3 of 7
Rev.1.0
SSF6005
60V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 2. Gate to source cut-off voltage
Figure 1: Typical Output Characteristics
Figure 3. Drain-to-Source Breakdown Voltage vs.
Temperature
Figure 4: Normalized On-Resistance Vs. Case
Temperature
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Page 4 of 7
Rev.1.0
SSF6005
60V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Maximum Drain Current Vs. Case
Temperature
Figure 6.Typical Capacitance Vs. Drain-to-Source
Voltage
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Page 5 of 7
Rev.1.0
SSF6005
60V N-Channel MOSFET
Mechanical Data
TO220 PACKAGE OUTLINE DIMENSION
Dimension In Millimeters
Dimension In Inches
Nom
Symbol
Min
4.400
1.270
2.590
0.770
1.230
0.480
15.100
9.000
0.050
10.060
-
Nom
4.550
1.300
2.690
-
Max
4.700
1.330
2.790
0.900
1.360
0.520
15.700
9.200
0.520
10.260
-
Min
0.173
0.050
0.102
0.030
0.048
0.019
-
0.354
0.002
0.396
-
Max
0.185
0.052
0.110
0.035
0.054
0.020
-
0.362
0.020
0.404
-
A
A1
A2
b
b2
c
0.179
0.051
0.106
-
-
-
0.500
15.400
9.100
0.285
10.160
8.700
1.500
2.54BSC
5.08BSC
0.020
0.606
0.358
0.011
0.400
0.343
0.059
0.1BSC
0.2BSC
D
D1
DEP
E
E1
ФP1
1.400
1.600
0.055
0.063
e
e1
H 1
6.100
12.750
-
6.300
12.960
-
6.500
13.170
3.950
0.240
0.502
-
0.248
0.510
-
0.256
0.519
0.156
L
L1
L2
ФP
Q
1.85REF
3.600
2.800
0.200
0.073REF
0.142
0.110
0.008
3.570
2.730
-
3.630
2.870
-
0.141
0.107
-
50
10
0.143
0.113
-
90
50
Q 1
ϴ1
ϴ2
50
10
70
30
90
50
70
30
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Page 6 of 7
Rev.1.0
SSF6005
60V N-Channel MOSFET
Ordering and Marking Information
Device Marking: SSF6005
Package (Available)
TO220
Operating Temperature Range
C : -55 to 175 ºC
Devices per Unit
Packag Units/Tu Tubes/Inner
Units/Inner Inner
Box
Units/Carton
Boxes/Carton Box
Box
e Type be
Box
TO220
50
20
1000
6
6000
Reliability Test Program
Test Item
High
Conditions
Tj=125℃ to 175℃ @
Duration Sample Size
168 hours
500 hours
1000 hours
3 lots x 77 devices
Temperature
Reverse
80% of Max
VDSS/VCES/VR
Bias(HTRB)
High
Tj=150℃ or 175℃ @
168 hours
500 hours
1000 hours
3 lots x 77 devices
Temperature
Gate
100% of Max VGSS
Bias(HTGB)
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Page 7 of 7
Rev.1.0
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