SSF6008 [SILIKRON]

Power switching application; 电源开关的应用


型号：	SSF6008
厂家：	SILIKRON SEMICONDUCTOR CO.,LTD.
描述：	Power switching application 电源开关的应用开关电源开关
文件：	总5页 (文件大小：335K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SSF6008

Feathers:

ID =84A

Advanced trench process technology

BV=60V

avalanche energy, 100% test

Rdson=8mΩ

Fully characterized avalanche voltage and current

Description:

The SSF6008 is a new generation of high voltage and low

current N–Channel enhancement mode trench power

MOSFET. This new technology increases the device reliability

and electrical parameter repeatability. SSF6008 is assembled

in high reliability and qualified assembly house.

Application:

SSF6008TOP View (T0-220)

Power switching application

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@T_c=25 ْC

I_D@T_c=100ْC

I_DM

Continuous drain current,VGS@10V

Pulsed drain current

Power dissipation

①

310

150

1.5

±20

400

W/ Cْ

P_D@T_C=25ْC

Linear derating factor

Gate-to-Source voltage

V_GS

E_AS

Single pulse avalanche energy

Repetitive avalanche energy①

Peak diode recovery voltage

Operating Junction and

②

E_AR

dv/dt

v/ns

T_J

–55 to +150

Cْ

T_STG

Storage Temperature Range

Thermal Resistance

Parameter

Min.

—

Typ.

0.83

—

Max.

—

Units

R_θJC

R_θJA

Junction-to-case

Junction-to-ambient

Cْ /W

—

Electrical Characteristics @TJ=25 Cْ (unless otherwise specified)

Parameter Min. Typ. Max. Units

BV_DSSDrain-to-Source breakdown voltage 60

Test Conditions

V_GS=0V,I_D=250μA

mΩ V_GS=10V,I_D=30A

—

5.5

—

R_DS(on)Static Drain-to-Source on-resistance

—

2.0

—

V_GS(th)

Gate threshold voltage

4.0

V_DS=V_GS,I_D=250μA

V_DS=60V,V_GS=0V

V_DS=60V,

—

I_DSS

Drain-to-Source leakage current

μA

—

V_GS=0V,T_J=150Cْ

V_GS=20V

Gate-to-Source forward leakage

Gate-to-Source reverse leakage

—

100

I_GSS

-100

V_GS=-20V

©Silikron Semiconductor CO.,LTD.

2009.7.10

Version : 1.0

page

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SSF6008

—

Q_gTotal gate charge

I_D=30A,V_GS=10V

V_DD=30V

—

Q_gsGate-to-Source charge

Q_gdGate-to-Drain("Miller") charge

t_d(on)Turn-on delay time

—

18.2

15.6

70.5

13.8

3150

300

240

V_DD=30V

I_D=2A ,R_L=15Ω

R_G=2.5Ω

t_r

t_d(off)Turn-Off delay time

t_fFall time

Rise time

V_GS=10V

V_GS=0V

C_issInput capacitance

V_DS=25V

f=1.0MHZ

C_ossOutput capacitance

C_rssReverse transfer capacitance

Source-Drain Ratings and Characteristics

Parameter

Continuous Source Current

(Body Diode)

Min.

Typ.

Max.

Units

Test Conditions

MOSFET symbol

showing the

I_S

—

integral reverse

p-n junction diode.

Pulsed Source Current

I_SM

—

310

(Body Diode)

①

V_SDDiode Forward Voltage

t_rrReverse Recovery Time

Q_rrReverse Recovery Charge

t_onForward Turn-on Time

—

－

—

1.3

—

T_J=25ْC,I_S=60A,V_GS=0V ③

T_J=25Cْ ,I_F=75A

μC

di/dt=100A/μs ③

107

—

Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)

Notes:

① Repetitive rating; pulse width limited by max junction temperature.

② Test condition: L =0.3mH, VDD = 30V,Id=37A

③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C

EAS Test Circuit:

Gate Charge Test Circuit:

©Silikron Semiconductor CO.,LTD.

2009.7.10

Version : 1.0

page

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SSF6008

Switch Time Test Circuit:

Switch Waveform:

Transfer Characteristic

Capacitance

On Resistance vs Junction Temperature

Breakdown Voltage vs Junction Temperature

©Silikron Semiconductor CO.,LTD.

2009.7.10

Version : 1.0

page

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SSF6008

Source-Drain Diode Forward Voltage

Gate Charge

Safe Operation Area

Max Drain Current vs Junction

Transient Thermal Impedance Curve

2009.7.10

Version : 1.0

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SSF6008

TO-220 MECHANICAL DATA:

2009.7.10

Version : 1.0

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