SSF7912 [GOOD-ARK]
Small Signal Field-Effect Transistor,;
| 型号： | SSF7912 |
| 厂家： | 
GOOD-ARK ELECTRONICS |
| 描述： | Small Signal Field-Effect Transistor, |
| 文件： | 总5页 (文件大小：1035K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSꢀ7912
ꢀꢁꢂ ꢃ-Channel MOSꢀꢄT
Main Product Characteristics
V(BR)DSS
RDS(on)
ID
60V
75mΩ
3.2A
SOT-23
Schematic Diagram
ꢀeatures and ꢅenefits
Advanced MOSFET process technology
Ideal for high efficiency switched mode power supplies
Low on-resistance with low gate charge
Fast switching and reverse body recovery
Description
The SSF7912 utilizes the latest techniques to achieve high cell density and low on-resistance.
These features make this device extremely efficient and reliable for use in high efficiency switch
mode power supply and a wide variety of other applications.
ꢆbsolute Maximum Ratings (TC=25°C unless otherwise specified)
Rating
60
Parameter
Symbol
VDS
Unit
V
Drain-Source Voltage
±20
Gate-Source Voltage
VGS
V
3.2
Drain Current – Continuous (TC=25°C)
Drain Current – Continuous (TC=100°C)
Drain Current – Pulsed1
A
ID
2
A
12.8
IDM
A
1.56
Power Dissipation (TC=25°C)
W
PD
0.012
-50 to +150
-50 to +150
Power Dissipation – Derate above 25°C
Storage Temperature Range
W/°C
°C
°C
TSTG
TJ
Operating Junction Temperature Range
Thermal Characteristics
Parameter
Symbol
Typ.
Max.
Unit
Thermal Resistance Junction to Ambient
RθJA
---
80
°C/W
1/5
SSF7912
60V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise specified)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
BVDSS
VGS=0V , ID=250uA
60
---
---
---
---
---
0.05
---
---
---
V
V/°C
uA
△BVDSS/△TJ Reference to 25°C, ID=1mA
VDS=60V , VGS=0V , TJ=25°C
IDSS
1
Drain-Source Leakage Current
VDS=48V , VGS=0V , TJ=125°C
---
10
uA
Gate-Source Leakage Current
IGSS
VGS=±20V , VDS=0V
---
±100
nA
On Characteristics
VGS=10V , ID=6A
VGS=4.5V , ID=3A
---
---
60
70
1.8
-5
75
90
2.5
---
Static Drain-Source On-Resistance
RDS(ON)
mΩ
Gate Threshold Voltage
VGS(th)
△VGS(th)
gfs
1.2
---
V
mV/°C
S
VGS=VDS , ID =250uA
VDS=10V , ID=3A
VGS(th) Temperature Coefficient
Forward Transconductance
---
7
---
Dynamic and Switching Characteristics
Total Gate Charge2, 3
Qg
---
---
---
---
---
---
---
---
---
---
---
9.3
2.1
1.8
2.9
9.5
18.4
5.3
500
45
14
4
Gate-Source Charge2, 3
VDS=48V , VGS=10V , ID=6A
nC
nS
Qgs
Gate-Drain Charge2, 3
Qgd
4
Turn-On Delay Time2, 3
Td(on)
6
Rise Time2, 3
Tr
18
35
10
725
65
30
4
VDD=30V , VGS=10V ,
RG=3.3Ω , ID=1A
Turn-Off Delay Time2, 3
Td(off)
Fall Time2, 3
Tf
Input Capacitance
Ciss
Coss
Crss
Rg
VDS=15V , VGS=0V , F=1MHz
VGS=0V, VDS=0V, F=1MHz
pF
Ω
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
16
2
Drain-Source Diode Characteristics and Maximum Ratings
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Continuous Source Current
IS
---
---
3.2
A
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25°C
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time2
Reverse Recovery Charge2
ISM
VSD
trr
---
---
---
---
---
---
6.4
1
A
V
23.2
14.3
---
---
ns
nC
VGS=30V , IS=1A,
DI/dt=100A/µS, TJ=25°C
Qrr
Note:
1. Repetitive Rating: Pulsed width limited by maximum junction temperature.
2.
3. Essentially independent of operating temperature.
The data tested by pulsed, pulse width ≦ 300uS, duty cycle ≦ 2%.
2/5
SSꢀ7912
ꢀꢁꢂ ꢃ-Channel MOSꢀꢄT
Typical ꢄlectrical and Thermal Characteristic Curꢇes
TJ , Junction Temperature (°C)
ꢀig.ꢍ ꢃormaliꢉed RDS(Oꢃ) ꢇs. Tꢎ
TC , Case Temperature (°C)
ꢀig.ꢌ Continuous Drain Current ꢇs. TC
Qg , Gate Charge (nC)
ꢀig.ꢐ ꢑate Charge ꢒaꢇeform
TJ , Junction Temperature (°C)
ꢀig.ꢏ ꢃormaliꢉed ꢂth ꢇs. Tꢎ
Square Wave Pulse Duration (S)
VDS , Drain to Source Voltage (V)
ꢀig.ꢈ ꢃormaliꢉed Transient ꢊmpedance
ꢀig.ꢋ Maximum Saꢂe Oꢃeration Area
3/5
SSF7912
60V N-Channel MOSFET
Typical Electrical and Thermal Characteristic Curves
1
BVDSS
BVDSS-VDD
L x IAS2 x
EAS=
2
Fig.8 EAS Waveform
Fig.7 Switching Time Waveform
4/5
SSF7912
60V N-Channel MOSFET
Package Outline Dimensions
SOT-23
Dimensions In Inches
Dimensions In Millimeters
Symbol
Min
Max
Min
Max
A
0.900
0.000
1.000
0.100
0.035
0.000
0.039
0.004
A1
b
c
0.300
0.090
2.800
1.200
2.250
0.500
0.110
3.000
1.400
2.550
0.012
0.003
0.110
0.047
0.089
0.020
0.004
0.118
0.055
0.100
D
E
E1
e
0.950 TYP.
0.037 TYP.
0.022 REF.
e1
L
1.800
2.000
0.071
0.079
0.550 REF.
L1
θ
0.300
1˚
0.500
7˚
0.012
1˚
0.020
7˚
Order Information
Device
Package
SOT-23
Marking Code
Carrier
Quantity
3000/Reel
HSF Status
SSF7912
N
Tape & Reel
RoHS Compliant
www.goodarksemi.com
5/5
Doc.USSSF7912xSP2.2
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