GS8150V36AB-250T [GSI]

Late-Write SRAM, 512KX36, 2ns, CMOS, PBGA119, FBGA-119;
GS8150V36AB-250T
元器件型号: GS8150V36AB-250T
生产厂家: GSI TECHNOLOGY    GSI TECHNOLOGY
描述和应用:

Late-Write SRAM, 512KX36, 2ns, CMOS, PBGA119, FBGA-119

静态存储器
PDF文件: 总25页 (文件大小:800K)
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型号参数:GS8150V36AB-250T参数

GS8150V36AB-300

1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM

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20 GSI

GS8150V36AB-300

Late-Write SRAM, 512KX36, 1.6ns, CMOS, PBGA119, FBGA-119

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0 GSI

GS8150V36AB-300I

1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM

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11 GSI

GS8150V36AB-300IT

Late-Write SRAM, 512KX36, 1.6ns, CMOS, PBGA119, FBGA-119

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0 GSI

GS8150V36AB-300T

Late-Write SRAM, 512KX36, 1.6ns, CMOS, PBGA119, FBGA-119

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0 GSI

GS8150V36AB-300T

Late-Write SRAM, 512KX36, 1.6ns, CMOS, PBGA119, FBGA-119

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0 GSI

GS8150V36AB-333

1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM

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26 GSI

GS8150V36AB-333I

1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM

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14 GSI

GS8150V36AB-333I

Late-Write SRAM, 512KX36, 1.5ns, CMOS, PBGA119, FBGA-119

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0 GSI

GS8150V36AB-333T

Late-Write SRAM, 512KX36, 1.5ns, CMOS, PBGA119, FBGA-119

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0 GSI

GS8150V36AB-333T

Late-Write SRAM, 512KX36, 1.5ns, CMOS, PBGA119, FBGA-119

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0 GSI

GS8150V36AB-357

1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM

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20 GSI

GS8150V36AB-357I

1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM

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13 GSI

GS8150V36AB-357IT

Late-Write SRAM, 512KX36, 1.4ns, CMOS, PBGA119, FBGA-119

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0 GSI

GS8150V36AB-357IT

Late-Write SRAM, 512KX36, 1.4ns, CMOS, PBGA119, FBGA-119

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0 GSI