GS8150V36AB-333T [GSI]

Late-Write SRAM, 512KX36, 1.5ns, CMOS, PBGA119, FBGA-119;
GS8150V36AB-333T
型号: GS8150V36AB-333T
厂家: GSI TECHNOLOGY    GSI TECHNOLOGY
描述:

Late-Write SRAM, 512KX36, 1.5ns, CMOS, PBGA119, FBGA-119

静态存储器 内存集成电路
文件: 总23页 (文件大小:327K)
下载:  下载PDF数据表文档文件

GS8150V36AB-357

1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM

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20 GSI

GS8150V36AB-357I

1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM

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13 GSI

GS8150V36AB-357IT

Late-Write SRAM, 512KX36, 1.4ns, CMOS, PBGA119, FBGA-119

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0 GSI

GS8150V36AB-357IT

Late-Write SRAM, 512KX36, 1.4ns, CMOS, PBGA119, FBGA-119

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0 GSI

GS8150V36AGB-250

1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM

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14 GSI

GS8150V36AGB-250

Late-Write SRAM, 512KX36, 2ns, CMOS, PBGA119, ROHS COMPLIANT, FBGA-119

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0 GSI

GS8150V36AGB-250I

1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM

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24 GSI

GS8150V36AGB-250I

Late-Write SRAM, 512KX36, 2ns, CMOS, PBGA119, ROHS COMPLIANT, FBGA-119

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0 GSI

GS8150V36AGB-250IT

Late-Write SRAM, 512KX36, 2ns, CMOS, PBGA119, ROHS COMPLIANT, FBGA-119

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0 GSI

GS8150V36AGB-250IT

Late-Write SRAM, 512KX36, 2ns, CMOS, PBGA119, ROHS COMPLIANT, FBGA-119

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0 GSI

GS8150V36AGB-250T

Late-Write SRAM, 512KX36, 2ns, CMOS, PBGA119, ROHS COMPLIANT, FBGA-119

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0 GSI

GS8150V36AGB-300

1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM

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23 GSI

GS8150V36AGB-300

Late-Write SRAM, 512KX36, 1.6ns, CMOS, PBGA119, ROHS COMPLIANT, FBGA-119

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0 GSI

GS8150V36AGB-300I

1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM

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14 GSI

GS8150V36AGB-300I

Late-Write SRAM, 512KX36, 1.6ns, CMOS, PBGA119, ROHS COMPLIANT, FBGA-119

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0 GSI