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GS881E18TT-11.5 [GSI]

Standard SRAM, 512KX18, 11.5ns, CMOS, PQFP100;

GS881E18TT-11.5


型号：	GS881E18TT-11.5
厂家：	GSI TECHNOLOGY
描述：	Standard SRAM, 512KX18, 11.5ns, CMOS, PQFP100 静态存储器内存集成电路
文件：	总34页 (文件大小：467K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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GS881E18TT-11I

Standard SRAM, 512KX18, 11ns, CMOS, PQFP100

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0 GSI

GS881E18TT-66I

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1 GSI

GS881E18TT-80

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1 GSI

GS881E32AD-133

512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs

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4 GSI

GS881E32AD-133I

512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs

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2 GSI

GS881E32AD-133IT

512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs

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4 GSI

GS881E32AD-133T

512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs

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4 GSI

GS881E32AD-150

512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs

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1 GSI

GS881E32AD-150I

512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs

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2 GSI

GS881E32AD-150IT

512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs

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1 GSI

GS881E32AD-150T

512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs

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1 GSI

GS881E32AD-166

512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs

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1 GSI

GS881E32AD-166I

512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs

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1 GSI

GS881E32AD-166IT

512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs

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2 GSI

GS881E32AD-166T

512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs

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2 GSI

GS881E32AD-200

512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs

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3 GSI

GS881E32AD-200I

512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs

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4 GSI

GS881E32AD-200IT

512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs

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10 GSI

GS881E32AD-200T

512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs

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2 GSI

GS881E32AD-225

512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs

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4 GSI

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