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RGPP3M [GULFSEMI]

GLASS PASSIVATED FAST RECOVERY RECTIFIER VOLTAGE: 50 TO 1000V CURRENT: 1.0A; 玻璃钝化快速恢复整流电压： 50〜 1000V电流： 1.0A
RGPP3M
型号： RGPP3M
厂家： GULF SEMICONDUCTOR    GULF SEMICONDUCTOR
描述：

GLASS PASSIVATED FAST RECOVERY RECTIFIER VOLTAGE: 50 TO 1000V CURRENT: 1.0A
玻璃钝化快速恢复整流电压： 50〜 1000V电流： 1.0A

二极管 快速恢复二极管
文件： 总2页 (文件大小：400K)
中文：  中文翻译
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RGPP3A THRU RGPP3M  
GLASS PASSIVATED  
FAST RECOVERY RECTIFIER  
VOLTAGE: 50 TO 1000V  
CURRENT: 1.0A  
DO - 201AD  
FEATURE  
Molded case feature for auto insertion  
High Switching Capability  
Low leakage current  
High surge capability  
High temperature soldering guaranteed  
250°C /10sec/0.375" lead length at 5 lbs tension  
Glass Passivated chip  
MECHANICAL DATA  
Terminal: Plated axial leads solderable per  
MIL-STD 202E, method 208C  
Case: Molded with UL-94 Class V-0 recognized Flame  
Retardant Epoxy  
Polarity: color band denotes cathode  
Mounting position: any  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)  
RGPP  
3A  
RGPP  
3B  
RGPP  
3D  
RGPP  
3G  
RGPP  
3J  
RGPP  
3K  
RGPP  
3M  
SYMBOL  
units  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
Vrrm  
Vrms  
Vdc  
50  
100  
V
V
V
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
35  
50  
70  
Maximum DC blocking Voltage  
100  
1000  
Maximum Average Forward Rectified  
Current 3/8" lead length at Ta =55°C  
Peak Forward Surge Current 8.3ms single  
half sine-wave superimposed on rated load  
Maximum Instantaneous Forward Voltage at  
rated forward current  
If(av)  
Ifsm  
Vf  
3.0  
125  
1.3  
30  
A
A
V
Maximum full load reverse current  
full cycle at TL =75°C  
Ir(av)  
µA  
5.0  
100.0  
50.0  
µA  
µA  
Maximum DC Reverse Current  
at rated DC blocking voltage  
Ta =25°C  
TL =55°C  
Ir  
Typical Junction Capacitance  
(Note 1)  
Cj  
Trr  
pF  
nS  
°C  
Maximum Reverse Recovery Time (Note 2)  
Storage and Operation Junction Temperature  
150  
250  
500  
Tstg, Tj  
-55 to +150  
Note:  
1. Measured at 1.0 MHz and applied voltage of 4.0Vdc  
2. Test Condition If =0.5A, Ir =1.0A, Irr =0.25A  
Rev.4  
www.gulfsemi.com  
RATINGS AND CHARACTERISTIC CURVES RGPP3A THRU RGPP3M  
1
1 Rev.4  
www.gulfsemi.com  

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