G11620_15_技术文档

InGaAs linear image sensors

G11620 series

(non-cooled type)

Single video line (128/256/512 pixels)

near infrared image sensor (0.95 to 1.7 μm)

The G11620 series is an InGaAs linear image sensor designed for near-infrared multichannel spectrophotometry. The CMOS

chip includes a charge ampliﬁer, a shift register, and a timing generator circuit. Unlike conventional InGaAs linear image sen-

sors that incorporate two CMOS signal processing chips, the G11620 series uses only one CMOS chip by bump-connecting

it to the InGaAs photodiode array. This structure reduces a difference in the video output that usually occurs between odd-

number pixels and even-number pixels.

The charge ampliﬁer array is made up of CMOS transistors connected to each pixel of the InGaAs photodiode array.

Signals from each pixel are read out in charge integration mode to achieve high sensitivity and stable operation in the wide

spectral range.

The signal processing circuit on the CMOS chip offers two levels of conversion efﬁciency (CE) that can be selected by the

external voltage to meet the application.

Features

Applications

Low noise, low dark current

Near infrared multichannel spectrophotometry

Radiation thermometry

Two selectable conversion efﬁciencies

Anti-saturation circuit

Non-destructive inspection

CDS circuit*¹

Built-in thermistor

Simple operation (by built-in timing generator)*²

High resolution: 25 μm pitch (G11620-256DF/-512DA)

*1: A major source of noise in charge ampliﬁers is the reset noise generated when the integration capacitance is reset. A CDS (correlated

double sampling) circuit greatly reduces this reset noise by holding the signal immediately after reset to ﬁnd the noise differential.

*2:Different signal timings must be properly set in order to operate a shift register. In conventional image sensor operation, external

PLDs (programmable logic device) are used to input the required timing signals. However, the image sensors internally generate all

timing signals on the CMOS chip just by supplying CLK and RESET pulses. This makes it simple to set the timings.

Selection guide

Image size

(mm)

Number of effective

Applicable driver

circuit

Type no.

Cooling

Number of total pixels

pixels

128

256

512

G11620-128DA

G11620-256DF

G11620-256DA

G11620-512DA

128

256

512

6.4 × 0.5

Non-cooled

C11513

12.8 × 0.5

Structure

Pixel size

[μm (H) × μm (V)]

Pixel pitch

(μm)

50

Type no.

Package

Window material

G11620-128DA

G11620-256DF

G11620-256DA

G11620-512DA

50 500

×

22-pin ceramic

(refer to the dimensional

outline)

25 500

×

25

50

25

Borosilicate glass with

anti-reﬂective coating

50 500

×

25 500

×

1

www.hamamatsu.com

InGaAs linear image sensors

G11620 series (non-cooled type)

Details of photosensitive area (unit: ꢀm)

x

H

Type no.

x

H

V

G11620-128DA

G11620-256DA

30 50 500

10 25 500

G11620-256DF

G11620-512DA

KMIRC0086EA

Block diagram (G11620-512DA)

CMOS chip

Shift

registor

CLK

. . . . .

RESET

Charge

amplifier

. . . . .

InGaAs

VIDEO

. . . . .

chip

. . . . .

Shift

^register. . . . .

AD_sp

AD_trig

KMIRC0048EA

2

InGaAs linear image sensors

G11620 series (non-cooled type)

Absolute maximum ratings

Parameter

Symbol

Vdd, INP, Fvref

Vinp, PDN

Vϕ

Condition

Ta=25 °C

Min.

-0.3

Typ.

-

Max.

+6

Unit

V

Supply voltage

Clock pulse voltage

Reset pulse voltage

Gain selection terminal voltage

Operating temperature

Storage temperature

Ta=25 °C

No dew condensation*³

-0.3

-10

-

+6

+60

+70

V

°C

-

V(RES)

Vcfsel

Topr

Tstg

-

-20

-

Soldering conditions

Thermistor power disspation

260 °C or less, within 5 s

-

Pd_th

Ta=25 °C

-

400

mW

*3: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation

may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability.

Note: Absolute maximum ratings are the values that must not be exceeded at any time. If even one of the absolute maximum ratings is

exceeded even for a moment, the product quality may be impaired. Always be sure to use the product within the absolute maxi-

mum ratings.

Recommended terminal voltage (Ta=25 °C)

Parameter

Supply voltage

Symbol

Vdd

Fvref

Vinp

INP

Min.

4.7

1.1

3.9

-

Typ.

5.0

1.2

4.0

0

Max.

5.3

1.3

4.1

-

Unit

V

Differential reference voltage

Video line reset voltage

Input stage ampliﬁer reference voltage

Photodiode cathode voltage

Ground

PDN

Vss

V

High

Clock pulse voltage

Low

High

Reset pulse voltage

Low

4.7

0

4.7

0

5.0

0

5.0

0

5.3

0.4

5.3

0.3

Vϕ

V

V(RES)

Electrical characteristics (Ta=25 °C)

Parameter

Symbol

G11620-128DA

G11620-256DF

G11620-256DA

Min.

-

Typ.

35

50

55

80

-

1

Max.

60

80

100

1

Unit

mA

I(Vdd)

G11620-512DA

Consumption current

Ifvref

Ivinp

Iinp

Ipdn

f

-

0.1

1

5

Clock frequency

Video data rate

MHz

DR

f

High

Low

VH

-

4.0

1.2

Fvref

5

-

Video output voltage

V

L

Output offset voltage

Output impedance

Vos

Zo

V

kΩ

-

High

Low

-

9.0

-

Vdd

GND

10.0

3950

-

AD_trig, AD_sp pulse voltage

Vtrig, Vsp

V

-

11.0

-

Thermistor resistance

Thermistor B constant*⁴

Rth

B

kΩ

K

*4: T1=25 °C, T2=50 °C

3

InGaAs linear image sensors

G11620 series (non-cooled type)

Electrical and optical characteristics (Ta=25 °C, Vdd=5 V, INP=Vinp=PDN=4 V, Fvref=1.2 V, Vϕ=5 V, f=1 MHz)

Parameter

Spectral response range

Peak sensitivity wavelength

Photo sensitivity

Symbol

Condition

Min.

Typ.

0.95 to 1.7

1.55

Max.

-

1.65

-

Unit

μm

λ

λp

S

-

1.45

0.7

-

168

16.8

2.7

-

λ=λp

Cf=10 pF

Cf=1 pF

0.82

16

160

±5

175

17.5

2.8

±0.05

±0.5

A/W

-

Conversion efﬁciency*⁵

Photo response non-uniformity*⁶

Saturation charge

CE

nV/e

%

-

±10

-

PRNU

Qsat

-

CE=16 nV/e

CE=160 nV/e

-

Me

-

Saturation voltage

Dark output

Dark current

Vsat

VD

ID

V

V/s

pA

-

CE=16 nV/e

±0.5

±5

-

Temperature coefﬁcient of dark output

(dark current)

-

CE=16 nV/e

-

1.1

-

times/°C

-

CE=16 nV/e

CE=160 nV/e

-

200

300

14000

-

400

500

-

Readout noise*⁷

N

μV rms

-

6750

-

Dynamic range

Defective pixels*⁸

D

-

CE=16 nV/e

-

%

1

*5: Refer to pin connection when changing conversion efficiency.

*6: 50% of saturation, integration time 10 ms, after dark output subtraction, excluding ﬁrst and last pixels

-

*7: Integration time=10 ms (CE=16nV/e ), 1 ms (CE=160 nV/e )

*8: Pixels with photo response non-uniformity, readout noise, or dark current higher than the maximum value

4

InGaAs linear image sensors

G11620 series (non-cooled type)

Equivalent circuit

G11620-128DA/256DA

PDN

Cf_select

S/H

VIDEO

INP

Fvref

Photodiode array

Charge amplifier array

CMOS readout circuit

KMIRC0049EA

G11620-256DF/512DA

PDN

Cf_select

S/H

VIDEO

Even-

number

pixels

Odd-

number

pixels

INP

Fvref

Odd-number pixels

Cf_select

S/H

INP

Even-number pixels

Photodiode array

Charge amplifier array

CMOS readout circuit

KMIRC0054EA

5

InGaAs linear image sensors

G11620 series (non-cooled type)

Timing chart

CLK

5 CLK

Blank

Integration time (setting)

RESET

AD_sp

Integration time (actual)

5 CLK

AD_trig

n × CLK

VIDEO

1

2

n-1 n

tf(clk)

tr(clk)

Note:

n=number of channels

tpw(clk)

tr(res)

CLK

tf(res)

RESET

tpw(res)

KMIRC0055EB

Parameter

Clock pulse frequency

Clock pulse width

Clock pulse rise/fall times

High

Reset pulse width

Low

Symbol

Min.

0.1

60

0

Typ.

1

500

20

-

Max.

5

5000

30

-

Unit

MHz

ns

f

tpw(clk)

tr(clk), tf(clk)

ns

6

tpw(res)

clocks

ns

“Number of pixels” + 28

0

-

20

-

30

Reset pulse rise/fall times

tr(res), tf(res)

6

InGaAs linear image sensors

G11620 series (non-cooled type)

Connection example

CLK

Pulse

generator

AD_sp

Buffer amp

RESET

AD_trig

Controller

Cf_select 1

Cf_select 2

ADC

INP

PDN

Vinp

Fvref

Supply

voltage

Vdd

VIDEO

Buffer amp

GND

KMIRC0056EB

Spectral response (typical example)

Spectral transmittance characteristic of window material (typical example)

(Ta=25 °C)

1.0

100

95

90

85

80

0.8

0.6

0.4

0.2

0

75

70

1.2

0.8

1.0

1.4

1.6

1.8

0.8

1.0

1.2

1.4

1.6

1.8

Wavelength (μm)

KMIRB0051EB

KMIRB0090EA

7

InGaAs linear image sensors

G11620 series (non-cooled type)

Linearity error

20 ^{(Td=25 ˚C, Vdd=5 V, INP=Vinp=PDN=4 V, Fvref=1.2 V, f=1 MHz, CE=16 nV/eˉ)}

15

10

5

0

-5

-10

-15

-20

1

10

100

1000

10000

Output voltage (mV)

KMIRB0091EA

Temperature characteristic of thermistor

(Typ.)

1000

Temperature Thermistor resistance Temperature Thermistor resistance

(°C)

20

25

30

35

40

45

50

55

60

65

70

(°C)

-40

-35

-30

-25

-20

-15

-10

-5

0

5

10

15

(kΩ)

281

208

155

117

88.8

68.4

53.0

41.2

32.1

25.1

19.8

15.7

(kΩ)

12.5

10.0

8.06

6.53

5.32

4.36

3.59

2.97

2.47

2.07

1.74

100

10

1

-40 -30 -20 -10

0

10 20 30 40 50 60 70

Temperature (°C)

KMIRB0061EA

8

InGaAs linear image sensors

G11620 series (non-cooled type)

Dimensional outlines (unit: mm)

G11620-128DA/256DF

Thermistor

31.8 0.3

16.8 0.3

3.0 0.3

1.7 0.2

22 21

13 12

Window

Photosensitive

surface

1

2

10 11

Photosensitive area (left side 1 ch)

Index mark

2.54 0.15

25.4 0.15

0.51 0.05

Pin no.

Function

Pin no.

12

Function

Chip material: InGaAs

1

2

NC

VIDEO

Vinp

Package material: ceramic

Lead treatment: Ni/Au plating

Lead material: FeNi alloy

Reflective index of window material: nd=1.47

Window material thickness: 0.75 0.05

AR-coated

Window sealing method: resin adhesion

Position accuracy of photosensitive area center:

-0.3≤X≤+0.3

13

3

NC

14

CLK

4

NC

15

PDN*

INP*

5

Cf_select 2

Cf_select 1

Thermistor

NC

16

6

17

GND

7

18

Vdd

-0.3≤Y≤+0.3

8

19

NC

9

20

AD_trig

RESET

AD_sp

* PDN and INP should be at the same potential.

When supplying voltage to PDN and INP,

it is recommended to use the same power

source and short between their pins.

10

11

Fvref

21

NC

22

KMIRA0030EB

9

InGaAs linear image sensors

G11620 series (non-cooled type)

G11620-256DA/512DA

31.8 0.3

23.2 0.3

3.0 0.3

1.7 0.2

Thermistor

22 21

13 12

Window

Photosensitive

surface

1

2

10 11

Photosensitive area (left side 1 ch)

Index mark

2.54 0.15

25.4 0.15

0.51 0.05

Pin no.

Function

Pin no.

12

Function

Chip material: InGaAs

1

2

NC

VIDEO

Vinp

Package material: ceramic

Lead treatment: Ni/Au plating

Lead material: FeNi alloy

Reflective index of window material: nd=1.47

Window material thickness: 0.75 0.05

AR-coated

Window sealing method: resin adhesion

Position accuracy of photosensitive area center:

-0.3≤X≤+0.3

13

3

NC

14

CLK

4

NC

15

PDN*

INP*

5

Cf_select 2

Cf_select 1

Thermistor

NC

16

6

17

GND

7

18

Vdd

-0.3≤Y≤+0.3

8

19

NC

9

20

AD_trig

RESET

AD_sp

* PDN and INP should be at the same potential.

When supplying voltage to PDN and INP,

it is recommended to use the same power

source and short between their pins.

10

11

Fvref

21

NC

22

KMIRA0023ED

10

InGaAs linear image sensors

G11620 series (non-cooled type)

Pin connections

Terminal name Input/Output

Function and recommended connection

Cathode bias terminal for InGaAs photodiode. This should be at the same potential

as INP.

Remark

4.0 V

PDN

Input

AD_sp

Cf_select1, 2

Thermistor

AD_trig

Output

Input*⁹

Output

Digital start signal for A/D conversion

0 to 5 V

0 V or 5 V

-

Signal for selecting feedback capacitance (integration capacitance) on CMOS chip

Thermistor for monitoring temperature inside the package

Sampling synchronous signal for A/D conversion

0 to 5 V

Reset pulse for initializing the feedback capacitance in the charge ampliﬁer formed in

the CMOS chip. Integration time is determined by the high period of this pulse.

Clock pulse for operating the CMOS shift register

Input stage ampliﬁer reference voltage. Supply voltage for operating the signal

processing circuit in the CMOS chip. This should be at the same potential as PDN.

Video line reset voltage. Supply voltage for operating the signal processing circuit in

the CMOS chip.

RESET

CLK

Input

0 to 5 V

4.0 V

INP

Vinp

Input

4.0 V

1.2 V

Differential amplifier reference voltage. Supply voltage for operating the signal

processing circuit in the CMOS chip.

Fvref

VIDEO

Vdd

GND

Output

Input

Differential ampliﬁer output. Analog video signal.

Supply voltage for operating the signal processing circuit in the CMOS chip (+5 V)

Grand for the signal processing circuit in the CMOS chip (0 V)

1.2 to 4.0 V

5 V

0 V

*9: Conversion efficiency is determined by supply voltage to the Cf_select terminals as shown below.

Conversion efﬁciency

Cf_select1

High

Cf_select2

High

-

16 nV/e (Low gain)

-

160 nV/e (High gain)

High

Low

Low: 0 V (GND), High: 5 V(Vdd)

Electrostatic countermeasures

This device has a built-in protection circuit against static electrical charges. However, to prevent destroying the device with electrostatic

charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. Also protect this de-

vice from surge voltages which might be caused by peripheral equipment.

Related information

www.hamamatsu.com/sp/ssd/doc_en.html

Precautions

∙ Disclaimer

∙ Image sensors

Information described in this material is current as of July, 2015.

Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the

information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always

contact us for the delivery specification sheet to check the latest specifications.

The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that

one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.

Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.

www.hamamatsu.com

HAMAMATSU PHOTONICS K.K., Solid State Division

1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218

Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8

France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10

United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777

North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01

Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741

China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866

11

Cat. No. KMIR1019E06 Jul. 2015 DN


型号：	G11620_15
厂家：	HAMAMATSU CORPORATION
描述：	Single video line (128/256/512 pixels) near infrared image sensor (0.95 to 1.7 Î¼m)
文件：	总11页 (文件大小：288K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

G11620_15 [HAMAMATSU]

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