S9032 [HAMAMATSU]
Si photodiode; 硅光电二极管
| 型号： | S9032 |
| 厂家： | 
HAMAMATSU CORPORATION |
| 描述： | Si photodiode |
| 文件： | 总2页 (文件大小：134K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
P H O T O D I O D E
Si photodiode
S9032
RGB color sensor
S9032 is a color sensor molded into a plastic package having a 3-channel (RGB) photodiode sensitive to the blue (λp=460 nm), green
(λp=540 nm) and red (λp=660 nm) regions of the spectrum. S9032 has a 3-segment (RGB) circular active area of φ2 mm.
Features
Applications
White balance adjustment
Color identification
Brightness level detection for projectors, TVs, etc.
Color management
Color temperature detection of light sources
3-channel (R, G, B) Si photodiode
Surface-mount small plastic package
High sensitivity
Active area: 3-segment (RGB) circular active area of φ2 mm
I Absolute maximum ratings
Parameter
Reverse voltage
Symbol
VR Max
Topr
Value
10
Unit
V
Operating temperature
Storage temperature
-25 to +85
-40 to +100
°C
°C
Tstg
I Electrical and optical characteristics (Ta= 25 °C, per element )
Parameter
Symbol
Condition
Blue
Min.
Typ.
400 to 540
480 to 600
590 to 720
460
Max.
Unit
nm
-
-
-
-
-
-
-
-
-
-
Spectral response range
l
Green
-
Red
-
Blue
Green
Red
-
Peak sensitivity wavelength
Photo sensitivity
lp
-
540
nm
-
660
Blue
Green
Red
0.16
0.20
0.37
0.21
S
l=lp
0.25
A/W
0.42
VR=1 V
All elements
Dark current
ID
TCID
tr
-
-
-
5
100
pA
times/°C
µs
Temperature coefficient of ID
Rise time
1.12
0.2
-
-
VR=0 V, RL=1 kW
10 to 90 %
VR=0 V
Terminal capacitance
Ct
-
40
80
pF
f=10 kHz
PRELIMINARY DATA
Aug. 2002
1
Si photodiode S9032
I Spectral response
I Dark current vs. reverse voltage
I Terminal capacitance vs. reverse
voltage
(Typ. Ta=25 ˚C)
(Typ. Ta=25 ˚C)
(Typ. Ta=25 ˚C)
0.5
1 nA
1 nF
RED
0.4
0.3
0.2
0.1
0
100 pA
10 pA
1 pA
100 pF
GREEN
BLUE
10 pF
1 pF
100 fA
200
400
600
800
1000
1200
0.01
0.1
1
10
100
0.1
1
10
100
WAVELENGTH (nm)
REVERSE VOLTAGE (V)
REVERSE VOLTAGE (V)
KSPDB0217EA
KSPDB0218EA
KSPDB0219EA
I Dimensional outline (uint: mm)
ACTIVE AREA
FILTER
3.2 × 3.2 × 0.55 t
PHOTOSENSITIVE
SURFACE
4.1 0.2
(INCLUDING BURR)
R B
G
1.5 0.4
* 4.0
1.5 0.4
0.7 0.3
0.4
0.8
7.0 0.3
1.8
0.7 0.3
PHOTOSENSITIVE
SURFACE
(2 ×) 10˚
ANODE (RED)
CATHODE COMMON
ANODE (GREEN)
N/C
CATHODE COMMON
ANODE (BLUE)
Tolerance unless otherwise
noted: 0.1, 2˚
(2 ×) 5˚
2.0 DEPTH 0.15 MAX.
Shaded area indicates burr.
Chip position accuracy with
respect to the package
dimensions marked *
X, Y≤ 0.2, θ≤ 2˚
KSPDA0154EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KSPD1059E01
Aug. 2002 DN
2
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