S9703-01 [HAMAMATSU]
Photo IC for laser beam synchronous detection High sensitivity, high-speed response; 光电IC激光束同步检测高灵敏度，高速响应
| 型号： | S9703-01 |
| 厂家： | 
HAMAMATSU CORPORATION |
| 描述： | Photo IC for laser beam synchronous detection High sensitivity, high-speed response |
| 文件： | 总2页 (文件大小：102K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
P H O T O I C
Photo IC for laser beam synchronous detection
S9703 series
High sensitivity, high-speed response
S9703 series photo IC uses a single-element high-speed PIN photodiode designed for laser beam synchronous detection. The current amplifier is
available with two gain levels (6 times and 20 times) according to laser power to be used. Hamamatsu also provides S9684 series photo IC that
uses a dual-element Si PIN photodiode ideal for high precision printing.
Features
Applications
High sensitivity
Current amplifier gain: 20 times (S9703)
6 times (S9703-01)
Print start timing detection for laser printers, digital copiers,
fax machines, etc.
Digital output
Small package
Suitable for lead-free solder reflow
Active area: 2.84 × 0.5 mm
■ Absolute maximum ratings (Ta=25 °C)
Parameter
Symbol
Vcc
P
Vo
Io
IRO
Topr
Tstg
Value
-0.5 to +7
300
-0.5 to +7
5
Unit
V
mW
V
mA
mA
°C
Supply voltage
Power dissipation *1
Output voltage *2
Output current
Ro terminal current
Operating temperature
Storage temperature
3
-25 to +80
-40 to +85
°C
*1: Derate power dissipation at a rate of -4 mW/°C above Ta=25 °C.
*2: Vcc=+0.5 V or less
■ Electrical and optical characteristics (Ta=25 °C, λ=780 nm, Vcc=5 V, Ro=5.1 kΩ, unless otherwise noted)
Parameter
Current consumption
High level output voltage
Low level output voltage
Symbol
Icc
VOH IOH=4 mA
VOL
Condition
No input
Min.
-
4.6
-
17
60
-
-
-
-
-
-
-
Typ.
-
-
Max.
1.5
-
0.3
27
Unit
mA
V
IOL=4 mA *3
-
V
S9703
S9703-01
S9703
S9703-01
S9703
S9703-01
22
75
-
-
-
Threshold input power
PTH
µW
ns
90
200
150
250
200
7
H→L propagation
delay time
L→H propagation
delay time
tPHL
tPLH
PI=66 µW (S9703)
P =225 µW (S9703-01)
Duty ratio 1:1
I
-
CL=15 pF, *4
Rise time
Fall time
tr
tf
4
4
-
ns
ns
µW
7
Maximum input power
PI Max.
PTH × 5
*3: PI=66 µW (S9703), PI=225 µW (S9703-01)
*4: Measured with a pulse-driven laser diode. Input light-pulse rise time and fall time are 1 ns or less.
100 %
INPUT LIGHT
INTENSITY
50 %
0 %
t
PHL
tPLH
90 %
OUTPUT
1.5 V
10 %
tf
tr
KPICC0112EA
1
Photo IC for laser beam synchronous detection S9703 series
■ Block diagram
Vcc
0.1 µF
5 V
Vref
Vo
CURRENT
AMPLIFIER
Ro
PD
EXTERNAL
GAIN RESISTANCE
Ro
GND
KPICC0113EA
■ Fumction
S9703 series photo IC integrates a photodiode chip and an IC chip into the same package. The photodiode chip is internally
connected to the IC chip as shown in the block diagram. S9703 series should be used with terminal Ro connected to an external
gain resistance Ro.
A photocurrent is generated when a laser beam enters the photodiode.This photocurrent is fed to the input terminal of the IC and,
after being amplified by the current amplifier, flows to the external gain resistance. At this time, voltages VRO at terminal Ro is given
by the following expression.
VRO=A × S × PI × Ro [V]
A: Current amplifier gain (S9703: 20 times, S9703-01: 6 times)
S: Photodiode sensitivity [A/W] (approx. 0.44 A/W at 780 nm)
PI: Input power [W]
Ro: External gain resistance [Ω]; usable range 2 kΩ to 10 kΩ
VRO is input to the internal comparator and compared with the internal reference voltage Vref (approx. 1 V) so the output Vo is
“High” when VRO < Vref or “Low” when VRO > Vref.
We recommend using S9703 series under the operating conditions that VRO is 2 to 3 V.
■ Dimensional outline (unit: mm)
3.2 ± 0.2
(INCLUDING BURR)
0.67 (CENTER OF
ACTIVE AREA)
0.15 (CENTER OF
ACTIVE AREA)
PHOTOSENSITIVE
SURFACE
0.5
1.0 ± 0.4
3.0 *
1.0 ± 0.4
0.05
0.35
0.75
5.0 ± 0.3
3.0 *
2.8
0.45 ± 0.3
0.45 ± 0.3
1.3
PHOTOSENSITIVE
SURFACE
2.4
MIRROR AREA
RANGE
Tolerance unless otherwise noted: ±0.1, ±2˚
Shaded area indicates burr.
Chip position accuracy with respect to the
package dimensions marked *
X, Y≤±0.2, θ≤±2˚
Vcc
NC
OUT
GND
Ro
GND
GND
GND
GND
GND
2.9
3.0 *
KPICA0058EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KPIC1058E02
Aug. 2007 DN
2
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