HMS51232J4V-20 [HANBIT]
SRAM MODULE 2Mbyte (512Kx32Bit), 68-Pin JLCC Packaging,3.3V; SRAM模块2Mbyte （ 512Kx32Bit ） ， 68引脚JLCC封装， 3.3V
| 型号： | HMS51232J4V-20 |
| 厂家： | 
HANBIT ELECTRONICS CO.,LTD |
| 描述： | SRAM MODULE 2Mbyte (512Kx32Bit), 68-Pin JLCC Packaging,3.3V |
| 文件： | 总7页 (文件大小：161K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HANBit
HMS51232J4V
H A N
SRAM MODULE 2Mbyte (512Kx32Bit), 68-Pin JLCC Packaging,3.3V
B I T
HMS51232J4V
Part No.
GENERAL DESCRIPTION
The HMS51232J4V is a static random access memory (SRAM) module containing 524,288 words organized in a
x32-bit configuration. The module consists of four 512K x 8 SRAMs mounted on a 68-pin, single-sided, FR4-
printed circuit board.
Four chip enable inputs, (/CE1, /CE2, /CE3 and /CE4) are used to enable the module’s 4 bytes independently.
Output enable (/OE) and write enable (/WE) can set the memory input and output.
Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW.
Reading is accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW.
For reliability, this SRAM module is designed as multiple power and ground pin. All module components may be
powered from a single +3.3V DC power supply and all inputs and outputs are fully LVTTL-compatible..
FEATURES
PIN ASSIGNMENT
Access time : 15, 17, 20 and 25ns
High-density 2MByte design
High-reliability, low-power design
Single +3V ±0.3V power supply
Three state output and LVTTL-compatible
FR4-PCB design
Low profile 68-Pin JLCC
OPTIONS MARKING
Timing
15ns access
17ns access
20ns access
25ns access
-15
-17
-20
-25
Packages
68-pin JLCC
J
68-Pin JLCC
TOP VIEW
1
HANBit Electronics Co.,Ltd.
HANBit
HMS51232J4V
PIN DESCRIPTION
DQ0 – DQ31
A0 – A18
Data Inputs/Outputs
Address Inputs
Write Enable
/WE
/CE1-4
/OE
Chip Selects
Output Enable
Vcc
Power Supply
Ground
Vss
BLOCK DIAGRAM
/ CS1
/ CS2
/ CS3
/ CS4
/ WE
/ OE
A0-18
512Kx8
512Kx8
512Kx8
512Kx8
8
8
8
8
DQ8-15
DQ16-23
DQ0-7
DQ24-31
TRUTH TABLE
MODE
/OE
/CE
/WE
DQ
POWER
STANDBY
NOT SELECTED
READ
X
H
L
H
L
L
L
X
H
H
L
HIGH-Z
HIGH-Z
Dout
STANDBY
ACTIVE
ACTIVE
ACTIVE
WRITE
X
Din
2
HANBit Electronics Co.,Ltd.
HANBit
HMS51232J4V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VIN,OUT
VCC
RATING
Voltage on Any Pin Relative to Vss
Voltage on Vcc Supply Relative to Vss
Power Dissipation
-0.5V to +4.6V
-0.5V to +4.6V
4W
PD
o
o
Storage Temperature
TSTG
-65 C to +150 C
o
o
Operating Temperature
TA
0 C to +70 C
Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
o
RECOMMENDED DC OPERATING CONDITIONS
( T =0 to 70 C )
A
PARAMETER
SYMBOL
MIN
3.0V
0
TYP.
MAX
3.6V
Supply Voltage
VCC
3.3V
Ground
VSS
0
-
0
Input High Voltage
Input Low Voltage
VIH
2.0
Vcc+0.3V**
0.8V
VIL
-0.5*
-
*
V (Min.) = -2.0V (Pulse Width 10ns) for I 20 mA
≤ ≤
IL
V (Min.) = Vcc+2.0V (Pulse Width 10ns) for I 20 mA
**
≤
≤
IH
DC AND OPERATING CHARACTERISTICS (1)
o
o
(0 C
T
70 C ; Vcc = 3.3V 0.3V, Unless otherwise specified)
≤ ±
≤
A
SYMBO
PARAMETER
TEST CONDITIONS
VIN = Vss to Vcc
/CE=VIH or /OE =VIH or /WE=VIL
OUT=Vss to VCC
L
MIN
MAX
UNITS
Input Leakage Current
Output Leakage Current
ILI
-2
2
A
µ
IL0
-2
2
A
µ
V
Output High Voltage
Output Low Voltage
IOH = -4.0mA
IOL = 8.0mA
VOH
VOL
2.4
V
0.4
V
o
* Vcc=3.3V, Temp=25 C
DC AND OPERATING CHARACTERISTICS (2)
MAX
-12
DESCRIPTION
TEST CONDITIONS
Min. Cycle, 100% Duty
/CE=VIL, VIN=VIH or VIL,
IOUT=0mA
SYMBOL
-10
-15
UNIT
Power Supply
Current:Operating
lCC
205
200
195
mA
Min. Cycle, /CE=VIH
lSB
50
10
50
10
50
10
mA
mA
Power Supply
Current:Standby
f=0MHZ, /CE V -0.2V,
≥
CC
lSB1
VIN V -0.2V or V 0.2V
≥
≤
IN
CC
3
HANBit Electronics Co.,Ltd.
HANBit
HMS51232J4V
CAPACITANCE
DESCRIPTION
TEST CONDITIONS
VI/O=0V
SYMBOL
CI/O
MAX
UNIT
pF
Input /Output Capacitance
Input Capacitance
8
7
VIN=0V
CIN
pF
*
: Capacitance is sampled and not 100% tested
NOTE
o
o
AC CHARACTERISTICS (0 C
TEST CONDITIONS
T
70 C ; Vcc = 3.3V 0.3V, unless otherwise specified)
≤
≤
±
A
PARAMETER
VALUE
0 to 3V
3ns
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Levels
Output Load
1.5V
See below
Output Load (B)
Output Load (A)
VL=1.5V
for tHZ, tLZ, tWHZ, tOW, tOLZ
+3.3V
& tOHZ
50
Ω
319
Ω
DOUT
DOUT
Z0=50
Ω
353
Ω
30pF
5pF*
READ CYCLE
-10
-12
-15
PARAMETER
Read Cycle Time
SYMBOL
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
tRC
tAA
tCO
tOE
10
-
-
10
10
5
12
-
-
12
12
6
15
-
ns
ns
ns
ns
ns
ns
ns
ns
-
15
15
7
Address Access Time
Chip Select to Output
-
-
-
Output Enable to Output
-
-
-
Chip Enable to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
tLZ
3
0
0
0
-
3
0
0
0
-
3
0
0
0
-
tOLZ
tHZ
-
-
-
5
6
7
tOHZ
5
6
7
4
HANBit Electronics Co.,Ltd.
HANBit
HMS51232J4V
Output Hold from Address Change
Chip Select to Power Up Time
Chip Select to Power Down Time
tOH
tPU
tPD
3
0
-
-
-
3
0
-
-
-
3
0
-
-
-
ns
ns
ns
15
12
15
WRITE CYCLE
-10
-12
-15
PARAMETER
SYMBOL
UNIT
MIN
10
7
MAX
MIN
12
8
MAX
MIN
10
10
0
MAX
Write Cycle Time
tWC
tCW
tAS
-
-
-
-
-
-
-
5
-
-
-
-
-
-
-
-
-
-
7
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
-
-
-
-
-
-
-
6
-
-
-
Chip Select to End of Write
Address Set-up Time
0
0
Address Valid to End of Write
Write Pulse Width (/OE High)
Write Pulse Width (/OE Low)
Write Recovery Time
tAW
tWP
tWP1
tWR
tWHZ
tDW
tDH
7
8
10
10
15
0
7
8
10
0
12
0
Write to Output High-Z
0
0
0
Data to Write Time Overlap
Data Hold from Write Time
End of Write to Output Low-Z
5
6
7
0
0
0
tOW
3
3
3
TIMING DIAGRAMS
See Part No. HMS51232M4/Z4
FUNCTIONAL DESCRIPTION
/CE
H
/WE
X*
H
/OE
X
MODE
I/O PIN
High-Z
High-Z
DOUT
SUPPLY CURRENT
Not Select
I SB, I SB1
ICC
L
H
Output Disable
Read
L
H
L
ICC
L
L
X
Write
DIN
ICC
Note: X means Don't Care
5
HANBit Electronics Co.,Ltd.
HANBit
HMS51232J4V
PACKAGE DIMMENSIONS
4.30 0.20mm
±
24.71 0.25mm
±
0.46 0.20mm
±
23.44 0.25mm
±
1.278 0.20mm
±
6
HANBit Electronics Co.,Ltd.
HANBit
HMS51232J4V
ORDERING INFORMATION
1
2
3
4
5
6
7
8
H M S 5 1 2 3 2 J 4 V-1 5
15ns Access Time
HANBit
Component, 3.3V
JLCC
Memory
Modules
x32bit
SRAM
512K
1. - Product Line Identifier
HANBit ------------------------------------------------------ H
2. - Memory Modules
3. - SRAM
4. - Depth : 512K
5. - Width : x 32bit
6. - Package Code
JLCC ------------------------------------------------------- J
7. - Number of Memory Components-----4, 3.3V-------V
8. - Access time
15 ----------------------------------------------------------- 15ns
17 ----------------------------------------------------------- 17ns
20 ----------------------------------------------------------- 20ns
25 ----------------------------------------------------------- 25ns
7
HANBit Electronics Co.,Ltd.
相关型号：
HMS51232M4G-10
Synchronous DRAM Module 32Mbyte(4Mx64-Bit), 144pin SO-DIMM, 4Banks, 4K Ref., 3.3V
HANBIT
HMS51232M4G-12
Synchronous DRAM Module 32Mbyte(4Mx64-Bit), 144pin SO-DIMM, 4Banks, 4K Ref., 3.3V
HANBIT
HMS51232M4G-15
Synchronous DRAM Module 32Mbyte(4Mx64-Bit), 144pin SO-DIMM, 4Banks, 4K Ref., 3.3V
HANBIT
HMS51232M4G-17
Synchronous DRAM Module 32Mbyte(4Mx64-Bit), 144pin SO-DIMM, 4Banks, 4K Ref., 3.3V
HANBIT
HMS51232M4G-20
Synchronous DRAM Module 32Mbyte(4Mx64-Bit), 144pin SO-DIMM, 4Banks, 4K Ref., 3.3V
HANBIT
©2020 ICPDF网 联系我们和版权申明