BAV103 [HDSEMI]

MINI MELF Glass-Encapsulate Diodes;
BAV103
型号: BAV103
厂家: Jiangsu High diode Semiconductor Co., Ltd    Jiangsu High diode Semiconductor Co., Ltd
描述:

MINI MELF Glass-Encapsulate Diodes

二极管
文件: 总5页 (文件大小:1470K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BAV10 0 - BAV10 3  
HD DL10  
MINI MELF Glass-Encapsulate Diodes  
Small Signal Fast Switching Diodes  
Features  
MINI MELF(SOD- 8 0 / LL- 3 4 )  
VR 50-200V  
IF 250mA  
Applications  
Extreme fast switches  
BAV  
Item  
Unit  
Conditions  
Symbol  
10 0  
10 1  
10 2  
10 3  
200  
250  
VRRM  
V
V
50  
100  
Repetitive Peak Reverse Voltage  
Repetitive Peak Reverse Voltage  
150  
60  
120  
200  
V
R
60Hz Half-sine wave, Resistance  
load, Ta=25  
IF  
mA  
A
Forward current  
250  
1
Surge(Non-repetitive)Forward  
Current  
60Hz Half-sine wave,1 cycle,  
Ta=25℃  
IFSM  
Junction Temperature  
Storage Temperature  
Power Dissipation  
TJ  
-55~+175  
-55 ~ +175  
400  
TSTG  
P tot  
mW  
1
H
igh Diode Semiconductor  
Electrical Characteristics (T =25 unless otherwise noted)  
A
Item  
Symbol  
Max  
Unit  
Test Condition  
IFM=1 00 mA  
IFM=2 00 mA  
1.00  
1.25  
Peak Forward  
Voltage  
VFM  
V
Peak Reverse  
Current  
0.1  
IRRM  
uA  
V RM=VR  
T =25  
a
IF=30mA to IR=30mA,  
Reverse recovery time  
ns  
trr  
50  
Irr=3mA,RL=100.  
Diode capacitance  
Cd  
5
pF  
VR=0,f=1MHZ  
2
H
igh Diode Semiconductor  
Typical Characteristics  
Figure 1. Reverse Current vs. Junction Temperature  
Figure 2. Forward Current vs. Forward Voltage  
1000  
100  
10  
1000  
T =25°C  
j
100  
10  
1
Scattering Limit  
Scattering Limit  
1
V =V  
R
RRM  
0.1  
0.01  
0.1  
200  
2.0  
0
40  
80  
120  
160  
0
0.4  
V
0.8  
– Forward Voltage ( V )  
F
1.2  
1.6  
T – Junction Temperature ( °C )  
j
Figure 3. Differential Forward Resistance vs.  
Forward Current  
1000  
100  
T =25°C  
j
10  
1
100  
0.1  
1
10  
I
– Forward Current ( mA )  
F
3
H
igh Diode Semiconductor  
MINI MELF  
0.063(1.6)  
0.055(1.4)  
0.020(0.5)  
0.012(0.3)  
0.020(0.5)  
0.012(0.3)  
0.146(3.7)  
0.130(3.3)  
Dimensions in millimeters  
MINI MELF  
3.5  
0.7  
JSHD  
JSHD  
4
H
igh Diode Semiconductor  
Packaging Specifications for Surface Mounted Glass Diodes  
1. The method of packaging and dimension are shown as below figure. (Dimension in mm)  
LS-31 (MicroMELF)  
LS-34 (QuadroMELF)  
2,500 pcs per reel  
LL-34 (MiniMELF)  
DO-213AA(MiniMELF)  
20,000 pcs per box  
8 reels per box  
100,000 pcs per carton  
5 boxes per carton  
185  
5
H
igh Diode Semiconductor  

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